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    DISPLAY PANEL
    21.
    发明申请
    DISPLAY PANEL 有权
    显示面板

    公开(公告)号：US20160178951A1

    公开(公告)日：2016-06-23

    申请号：US14742564

    申请日：2015-06-17

    Applicant: INNOLUX CORPORATION

    Inventor： Kuan-Feng LEE ,  Peng-Cheng HUANG ,  Kuo-Chang CHIANG ,  Tzu-Min YAN ,  Kuei-Ling LIU

    IPC: G02F1/1339 ,  G02F1/1335 ,  G02B5/20 ,  G02F1/1368

    CPC classification number: G02F1/13394 ,  G02B5/201 ,  G02F1/133512 ,  G02F1/133707

    Abstract: A display panel is provided. The display panel includes a color filter substrate. The color filter substrate includes a first substrate, a black matrix, a color filter layer, a transparent conductive layer, and a plurality of spacers. The black matrix and the color filter layer are disposed on the first substrate. The transparent conductive layer is disposed on the color filter layer and the black matrix, and has a plurality of openings located above the black matrix. The spacers are located on the transparent conductive layer and located on the black matrix. At least one of the openings is located between the adjacent spacers, and at least one of the spacers partially overlaps at least one of the openings.

    Abstract translation: 提供显示面板。 显示面板包括滤色器基板。 滤色器基板包括第一基板，黑矩阵，滤色器层，透明导电层和多个间隔件。 黑矩阵和滤色器层设置在第一基板上。 透明导电层设置在滤色器层和黑矩阵上，并且具有位于黑矩阵上方的多个开口。 间隔物位于透明导电层上并位于黑矩阵上。 至少一个开口位于相邻间隔件之间，并且至少一个间隔件部分地与至少一个开口重叠。

    DISPLAY PANEL
    22.
    发明申请
    DISPLAY PANEL 有权
    显示面板

    公开(公告)号：US20150228798A1

    公开(公告)日：2015-08-13

    申请号：US14610085

    申请日：2015-01-30

    Applicant: Innolux Corporation

    Inventor： Kuan-Feng LEE ,  Ming-Chang LIN ,  Tzu-Min YAN

    IPC: H01L29/786 ,  H01L27/32 ,  H01L29/417 ,  H01L27/12

    CPC classification number: H01L27/3258 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869 ,  H01L2251/301 ,  H01L2251/303

    Abstract: A display panel whose TFT substrate comprises a substrate, a gate layer, a gate dielectric layer, a semiconductor layer, a first electrode layer, a first passivation layer, a second passivation layer, a via and a second electrode layer is provided. The gate layer is disposed on the substrate. The gate dielectric layer is disposed on the gate layer. The semiconductor layer is disposed on the gate dielectric layer. The first electrode layer is disposed on the semiconductor layer. The first and second passivation layers are sequentially disposed on the first electrode layer. The via penetrates the passivation layers to expose the first electrode layer. The second electrode layer is electrically connected to the first electrode layer through the via. The first and second passivation layers have first and second taper angles respectively. The difference between the first and second taper angles is below 30°.

    Abstract translation: 提供了TFT基板包括基板，栅极层，栅极介电层，半导体层，第一电极层，第一钝化层，第二钝化层，通孔和第二电极层的显示面板。 栅极层设置在基板上。 栅极电介质层设置在栅极层上。 半导体层设置在栅介质层上。 第一电极层设置在半导体层上。 第一和第二钝化层依次设置在第一电极层上。 通孔穿透钝化层以露出第一电极层。 第二电极层通过通孔与第一电极层电连接。 第一和第二钝化层分别具有第一和第二锥角。 第一和第二锥角之间的差值低于30°。

    ELECTRONIC DEVICE
    23.
    发明申请
    ELECTRONIC DEVICE 有权

    公开(公告)号：US20240429195A1

    公开(公告)日：2024-12-26

    申请号：US18822698

    申请日：2024-09-03

    Applicant: InnoLux Corporation

    Inventor： Tzu-Min YAN ,  Tsau-Hua HSIEH

    IPC: H01L23/00 ,  H01L25/075 ,  H01L25/16 ,  H01L33/36 ,  H01L33/62

    Abstract: An electronic device is provided. The electronic device includes a substrate and a first light-emitting element disposed on the substrate and configured to emit a first light of a first color. The first light-emitting element includes a first p-type semiconductor layer and a first ohmic contact electrode disposed between the substrate and the first p-type semiconductor layer. The electronic device also includes a second light-emitting element disposed on the substrate and configured to emit a second light of a second color different from the first color. The second light-emitting element includes a second p-type semiconductor layer and a second ohmic contact electrode disposed between the substrate and the second p-type semiconductor layer. The area of the first ohmic contact electrode and the area of the second ohmic contact electrode are different.

    DISPLAY DEVICE
    28.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20170162606A1

    公开(公告)日：2017-06-08

    申请号：US15363289

    申请日：2016-11-29

    Applicant: InnoLux Corporation

    Inventor： Tzu-Min YAN ,  Ming-Chang LIN ,  Kuan-Feng LEE

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1251 ,  G02F1/133345 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/78696

    Abstract: A display device is provided, which includes a substrate structure containing a substrate with a pixel region, and the pixel region includes an aperture region. A metal oxide semiconductor transistor is disposed over the substrate and includes a metal oxide semiconductor layer with a first channel region, a first gate electrode corresponding to the first channel region, and a silicon oxide insulating layer on the metal oxide semiconductor layer. The silicon oxide insulating layer includes an opening corresponding to the aperture region. A polysilicon transistor is disposed over the substrate. The display device also includes an opposite substrate structure, and a display medium between the substrate structure and the opposite substrate structure.

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY
    29.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY 有权
    薄膜晶体管基板和显示器

    公开(公告)号：US20160111453A1

    公开(公告)日：2016-04-21

    申请号：US14880472

    申请日：2015-10-12

    Applicant: InnoLux Corporation

    Inventor： Kuan-Feng LEE ,  Tzu-Min YAN

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/124

    Abstract: Disclosed is a TFT substrate, including a substrate and a gate electrode thereon. A gate insulation layer over the substrate covers the gate electrode. An active layer is disposed over the gate insulation layer. An etch stop layer is disposed over the active layer and the gate insulation layer. A first opening penetrates the etch stop layer to expose a first part of the active layer. A source electrode over the etch stop layer is electrically connected to the first part of the active layer through the first opening. A first inorganic insulation layer is disposed over the source electrode and the etch stop layer. A second opening penetrates the first inorganic insulation layer and the etch stop layer to expose a second part of the active layer.

    Abstract translation: 公开了一种TFT基板，其上包括基板和栅电极。 衬底上的栅极绝缘层覆盖栅电极。 有源层设置在栅绝缘层上。 蚀刻停止层设置在有源层和栅极绝缘层之上。 第一开口穿透蚀刻停止层以暴露活性层的第一部分。 蚀刻停止层上的源电极通过第一开口电连接到有源层的第一部分。 第一无机绝缘层设置在源电极和蚀刻停止层上。 第二开口穿透第一无机绝缘层和蚀刻停止层，以露出活性层的第二部分。

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