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21.发明授权公开(公告)号：US10580925B2
公开(公告)日：2020-03-03
申请号：US16250109
申请日：2019-01-17
IPC分类号： H01L31/153 , H01L31/0735 , H01L31/18 , H01L33/00 , H01L31/0352 , H01L33/32 , H01L33/06 , H01L25/16 , H01L31/02 , H01L31/147 , H01L33/42
摘要： An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.
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22.发明申请公开(公告)号：US20200044108A1
公开(公告)日：2020-02-06
申请号：US16595867
申请日：2019-10-08
IPC分类号： H01L31/076 , H01L31/028 , H01L31/18 , H01L31/0224 , H01L31/0352 , H01L31/0687
摘要： A method of forming a photovoltaic device that includes ion implanting a first conductivity type dopant into first regions of a semiconductor layer of an SOI substrate, wherein the first regions are separated by a first pitch; and ion implanting a second conductivity type dopant into second regions of the semiconductor layer of the SOI substrate. The second regions are separated by a second pitch. Each second conductivity type implanted region of the second regions is in direct contact with first conductivity type implanted region of the first regions to provide a plurality of p-n junctions, and adjacent p-n junctions are separated by an intrinsic portion of the semiconductor layer to provide P-I-N cells that are horizontally oriented.
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公开(公告)号：US10553731B2
公开(公告)日：2020-02-04
申请号：US15585734
申请日：2017-05-03
IPC分类号： H01L31/0216 , H01L31/0693
摘要： A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.
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公开(公告)号：US10529891B2
公开(公告)日：2020-01-07
申请号：US15948577
申请日：2018-04-09
发明人： Jeehwan Kim , Ning Li , Devendra K. Sadana
IPC分类号： H01L33/10 , H01L31/0232 , H01L31/0304 , H01L31/0352 , H01L31/105 , H01L31/18 , H01L33/12 , H01L33/00 , H01L33/30
摘要： An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.
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公开(公告)号：US10468593B1
公开(公告)日：2019-11-05
申请号：US15950754
申请日：2018-04-11
发明人： Qing Cao , Jianshi Tang , Ning Li
IPC分类号： H01L21/8238 , H01L45/00
摘要： A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.
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公开(公告)号：US10454239B2
公开(公告)日：2019-10-22
申请号：US14838439
申请日：2015-08-28
摘要： After forming a monolithically integrated device including a laser and a modulator on a semiconductor substrate, an anti-reflection coating layer is formed over the monolithically integrated device and the semiconductor substrate by an atomic layer deposition (ALD) process. The anti-reflection coating layer is lithographically patterned so that an anti-reflection coating is only present on exposed surfaces of the modulator. After forming an etch stop layer portion to protect the anti-reflection coating, a high reflection coating layer is formed over the etch stop layer, the laser and the semiconductor structure by ALD and lithographically patterned to provide a high reflection coating that is formed solely on a non-output facet of the laser.
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公开(公告)号：US20190319184A1
公开(公告)日：2019-10-17
申请号：US15950754
申请日：2018-04-11
发明人： Qing Cao , Jianshi Tang , Ning Li
IPC分类号： H01L45/00
摘要： A method of forming a memory device that includes depositing a first dielectric material within a trench of composed of a second dielectric material; positioning a nanotube within the trench using chemical recognition to the first dielectric material; depositing a dielectric for cation transportation within the trench on the nanotube; and forming a second electrode on the dielectric for cation transportation, wherein the second electrode is composed of a metal.
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公开(公告)号：US10365240B2
公开(公告)日：2019-07-30
申请号：US15811265
申请日：2017-11-13
发明人： Stephen W. Bedell , Shu-Jen Han , Ning Li , Devendra K. Sadana
IPC分类号： G01N27/04 , H01L23/49 , H01L23/00 , H01L27/08 , H01L49/02 , H01L41/18 , H01L27/02 , H01L21/02
摘要： A material removal process referred to as spalling is used to provide flexible and stretchable sensors that can be used for healthcare monitoring, bio-medical devices, wearable electronic devices, artificial skin, large area sensing, etc. The flexible and stretchable sensors of the present application have high sensitivity that is comparable to that of a bulk silicon sensor. The flexible and stretchable sensors comprise single crystalline spring-like structures that couple various resistor structures together.
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29.发明申请公开(公告)号：US20190214521A1
公开(公告)日：2019-07-11
申请号：US15867121
申请日：2018-01-10
发明人： Joel P. de Souza , Ning Li , Devendra Sadana , Yao Yao
IPC分类号： H01L31/18 , H01L31/0304 , H01L21/04
摘要： Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes forming a semiconductor material that includes a first type of majority carrier. A doping enhancement layer is formed over a region of the semiconductor material, wherein the doping enhancement layer includes a first type of material. A dopant is accelerated sufficiently to drive the dopant through the doping enhancement layer into the region of the semiconductor material. Accelerating the dopant through the doping enhancement layer also drives some of the first type of material from the doping enhancement layer into the region of the semiconductor material. The dopant within the region and the first type of material within the region contribute to the region having a second type of majority carrier.
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30.发明申请公开(公告)号：US20190214475A1
公开(公告)日：2019-07-11
申请号：US16353332
申请日：2019-03-14
发明人： Ning Li , Yun Seog Lee , Joel P. de Souza , Devendra K. Sadana
IPC分类号： H01L29/45 , H01L21/02 , H01L21/768 , H01L29/66
摘要： A semiconductor device that includes source and drain regions that are doped to an n-type conductivity and are comprised of a type III-V semiconductor material. The semiconductor device further includes a contact to at least one of the source and drain regions. The contact includes an interface passivation layer atop the at least one source and drain region, and an n-type zinc oxide layer. A conduction band of the type III-V semiconductor material of the at least one source and drain region is substantially aligned with a conduction band of the n-type zinc oxide containing layer.
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