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公开(公告)号：US20190312064A1
公开(公告)日：2019-10-10
申请号：US16447000
申请日：2019-06-20
申请人： Japan Display Inc.
IPC分类号： H01L27/12 , H01L29/786
摘要： A semiconductor device includes a oxide semiconductor layer, a gate electrode arranged above the oxide semiconductor layer, a gate insulation layer between the oxide semiconductor layer and the gate electrode, a first insulation layer arranged above the oxide semiconductor layer and arranged with a first aperture part, wiring including an aluminum layer arranged above the first insulation layer, the wiring being electrically connected to the oxide semiconductor layer via the first aperture part, a barrier layer including aluminum oxide above the first insulation layer, above the wiring and covering a side surface of the wiring, and an organic insulation layer arranged above the barrier layer.
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公开(公告)号：US10211235B2
公开(公告)日：2019-02-19
申请号：US15678501
申请日：2017-08-16
申请人： Japan Display Inc.
IPC分类号： H01L27/12 , H01L21/02 , H01L29/423 , H01L29/66 , H01L29/786 , G03F7/00 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L27/32
摘要： The purpose of the present invention is to form both LTPS TFT and Ply-Si TFT on a same substrate. The feature of the display device to realize the above purpose is that: a display device comprising: a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer, an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat, a first interlayer insulating film is formed on or above the oxide semiconductor layer, the Poly-Si layer is formed on or above the first interlayer insulating film.
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公开(公告)号：US10177174B2
公开(公告)日：2019-01-08
申请号：US15617547
申请日：2017-06-08
申请人： Japan Display Inc.
发明人： Akihiro Hanada , Masayoshi Fuchi
IPC分类号： H01L27/12 , H01L21/02 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/786
摘要： According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.
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公开(公告)号：US10115740B2
公开(公告)日：2018-10-30
申请号：US15405511
申请日：2017-01-13
申请人： Japan Display Inc.
发明人： Akihiro Hanada , Hajime Watakabe , Kazufumi Watabe
IPC分类号： H01L29/12 , H01L29/40 , H01L23/48 , H01L27/12 , H01L29/423 , H01L29/51 , H01L29/786
摘要： According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.
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公开(公告)号：US20160149047A1
公开(公告)日：2016-05-26
申请号：US14944711
申请日：2015-11-18
申请人： Japan Display Inc.
IPC分类号： H01L29/786 , H01L23/00 , H01L21/385 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/4908 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： According to one embodiment, a thin-film transistor and a method of manufacturing the same achieve size reduction of the thin-film transistor while using an oxide semiconductor layer. The oxide semiconductor layer includes a channel region, a source region, and a drain region. A gate electrode is arranged at a position spaced from the channel region of the oxide semiconductor layer so as to face the channel region. A source electrode is electrically connected to the source region of the oxide semiconductor layer. A drain electrode is electrically connected to the drain region of the oxide semiconductor layer. An undercoat layer adjoins the source region and the drain region of the oxide semiconductor layer. A hydrogen blocking layer has a hydrogen concentration lower than that in the undercoat layer and separates the undercoat layer and the channel region of the oxide semiconductor layer.
摘要翻译： 根据一个实施例，薄膜晶体管及其制造方法在使用氧化物半导体层时实现薄膜晶体管的尺寸减小。 氧化物半导体层包括沟道区，源极区和漏极区。 栅电极配置在与氧化物半导体层的沟道区隔开的位置，以面对沟道区。 源极电极与氧化物半导体层的源极区电连接。 漏电极与氧化物半导体层的漏区电连接。 底涂层邻接氧化物半导体层的源极区和漏极区。 氢阻挡层的氢浓度低于底涂层中的氢浓度，并分离底涂层和氧化物半导体层的沟道区。
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公开(公告)号：US12132117B2
公开(公告)日：2024-10-29
申请号：US17561996
申请日：2021-12-27
申请人： Japan Display Inc.
发明人： Takuo Kaitoh , Akihiro Hanada , Takashi Okada
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78618
摘要： According to one embodiment, a semiconductor device includes a first insulating film formed of silicon nitride, a second insulating film disposed above the first insulating film and formed of silicon oxide, including a first region and a peripheral region surrounding the first region and thinner than the first region, an oxide semiconductor disposed on the second insulating film and intersecting the first region, a source electrode overlapping the peripheral region and a drain electrode overlapping the peripheral region. The first region is located between the source electrode and the drain electrode and separated from the source electrode and the drain electrode.
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公开(公告)号：US12085823B2
公开(公告)日：2024-09-10
申请号：US17987887
申请日：2022-11-16
申请人： Japan Display Inc.
IPC分类号： G02F1/1362 , G02F1/1368 , H01L27/12 , H01L29/786 , H10K59/131
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , H01L27/124 , H01L29/78672 , H10K59/131 , G02F2201/123
摘要： A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.
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公开(公告)号：US11894387B2
公开(公告)日：2024-02-06
申请号：US17747049
申请日：2022-05-18
申请人： Japan Display Inc.
发明人： Hajime Watakabe , Toshihide Jinnai , Ryo Onodera , Akihiro Hanada
IPC分类号： H01L27/00 , H01L29/00 , H01L27/12 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1285 , H01L29/66742 , H01L29/7869
摘要： There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.
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公开(公告)号：US20220223707A1
公开(公告)日：2022-07-14
申请号：US17657168
申请日：2022-03-30
申请人： Japan Display Inc.
发明人： Akihiro Hanada , Takuo Kaitoh , Hajime Watakabe
IPC分类号： H01L29/49 , H01L27/12 , H01L29/786 , G02F1/1368
摘要： The purpose of the present invention is to suppress a change in characteristics of a TFT using an oxide semiconductor film caused by that oxygen in the oxide semiconductor film is extracted by metal electrode. The main structure of the present invention is as follows. A semiconductor device having a TFT, in which a gate insulating film is formed on a gate electrode, and an oxide semiconductor film is formed on the gate insulating film; the oxide semiconductor film including a channel region, a drain region, and a source region; in which a metal nitride film is formed on a top surface of the gate electrode in an opposing portion to the channel region in a plan view; and the metal nitride film is not formed at a part of the top surface of the gate electrode.
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公开(公告)号：US11271020B2
公开(公告)日：2022-03-08
申请号：US16906569
申请日：2020-06-19
申请人： Japan Display Inc.
发明人： Akihiro Hanada , Masayoshi Fuchi
IPC分类号： H01L27/12 , H01L21/02 , H01L21/768 , H01L23/522 , H01L23/532 , H01L29/786
摘要： According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.
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