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公开(公告)号:US20170338437A1
公开(公告)日:2017-11-23
申请号:US15596056
申请日:2017-05-16
Applicant: Japan Display Inc.
Inventor: Kazufumi WATABE , Yoshinori ISHll
CPC classification number: H01L51/5036 , C09K19/06 , C09K19/38 , G02F1/133305 , G02F2201/54 , G06F1/1652 , H01L51/0076 , H01L51/0097 , H01L51/5246 , H01L51/5253 , H01L51/5293 , H05B33/145 , H05B33/20 , Y02E10/549
Abstract: The invention provides an organic EL display device that, even if bent, is not prone to plastic deformation and has improved moisture blocking characteristics.An organic EL display device includes: a glass substrate; an organic EL layer formed on an upper side of the glass substrate; and a support substrate glued on a lower side of the glass substrate via a first adhesive. Recessed portions or projecting portions are formed on the glass substrate at a side thereof facing the support substrate. The recessed portions or a space between each of the projecting portions is filled with the first adhesive.
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公开(公告)号:US20170338429A1
公开(公告)日:2017-11-23
申请号:US15596052
申请日:2017-05-16
Applicant: Japan Display Inc.
Inventor: Kazufumi WATABE
CPC classification number: H01L51/0097 , H01L27/1218 , H01L51/5253 , H01L51/5271 , Y02E10/549
Abstract: The invention provides a reliable organic EL display device with improved moisture barrier characteristics. An organic EL display device includes: an organic EL layer as a light-emitting layer formed on a resin substrate; and a barrier layer formed between the organic EL layer and the resin substrate, the barrier layer including an undercoat layer and AlOx layer. The undercoat layer is formed closer to the resin substrate than the AlOx layer.
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公开(公告)号:US20170243933A1
公开(公告)日:2017-08-24
申请号:US15279540
申请日:2016-09-29
Applicant: Japan Display Inc.
Inventor: Takeshi KURIYAGAWA , Kazufumi WATABE , Toshihiro SATO
CPC classification number: H01L27/3276 , G02F1/13458 , G02F1/1362 , H01L27/124 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L51/5253 , H01L2227/323
Abstract: A manufacturing method of a display device including a pixel region including a plurality of pixels each including a light emitting element and a terminal region provided outside the pixel region and including connection terminals; the method comprising: forming a recessed portion in a part of a top surface of each of the connection terminals; forming a first inorganic insulating layer, an organic insulating layer, and a second inorganic insulating layer sequentially in the pixel region and continuously in the terminal region; and etching the first inorganic insulating layer and the second inorganic insulating layer in an area where the first inorganic insulating layer and the second inorganic insulating layer are stacked directly, the area being on the top surface except the recessed portion.
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公开(公告)号:US20170207245A1
公开(公告)日:2017-07-20
申请号:US15405511
申请日:2017-01-13
Applicant: Japan Display Inc.
Inventor: Akihiro HANADA , Hajime WATAKABE , Kazufumi WATABE
IPC: H01L27/12
CPC classification number: H01L27/1225 , H01L27/1237 , H01L27/1248 , H01L27/1251 , H01L29/42384 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78606 , H01L29/78633 , H01L29/78675 , H01L29/7869 , H01L2029/42388
Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.
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公开(公告)号:US20250063767A1
公开(公告)日:2025-02-20
申请号:US18939825
申请日:2024-11-07
Applicant: Japan Display Inc.
Inventor: Yohei YAMAGUCHI , Kazufumi WATABE , Tomoyuki ARIYOSHI , Osamu KARIKOME , Ryohei TAKAYA
IPC: H01L29/786 , H01L27/12 , H01L29/40 , H01L29/423 , H01L29/45 , H01L29/49
Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.
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公开(公告)号:US20230081420A1
公开(公告)日:2023-03-16
申请号:US17983481
申请日:2022-11-09
Applicant: Japan Display Inc.
Inventor: Isao SUZUMURA , Kazufumi WATABE , Yoshinori ISHII , Hidekazu MIYAKE , Yohei YAMAGUCHI
IPC: H01L27/12 , H01L29/786 , H01L29/51 , H01L29/24 , G02F1/1368 , G02F1/133 , G02F1/1362 , H01L29/417 , H01L29/423 , H01L29/49
Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
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公开(公告)号:US20220367528A1
公开(公告)日:2022-11-17
申请号:US17876063
申请日:2022-07-28
Applicant: Japan Display Inc.
Inventor: Akihiro HANADA , Hajime WATAKABE , Kazufumi WATABE
IPC: H01L27/12 , H02J13/00 , G06F1/26 , H04L41/069 , H04L47/2416 , H04L67/12
Abstract: A semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.
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公开(公告)号:US20200328262A1
公开(公告)日:2020-10-15
申请号:US16910084
申请日:2020-06-24
Applicant: Japan Display Inc.
Inventor: Hiroshi KAWANAGO , Kazufumi WATABE
Abstract: The purpose of the invention is to manufacture the flexible display device having resin substrate with high yield. The structure is as follows.A manufacturing method of a display device comprising: forming a first layer of a semiconductor on a glass substrate, forming a second layer of a first metal on the first layer, forming a third layer of a first insulating material on the second layer, forming a fourth layer of a second metal or a metal oxide on the third layer, coating precursor of polyimide on the fourth layer, making a polyimide substrate by baking the precursor of polyimide to make a polyimide substrate, forming pixels on the polyimide substrate, separating the polyimide substrate and the glass substrate by making peel off between the second layer and the third layer with irradiation of a laser beam on the first layer.
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公开(公告)号:US20200119103A1
公开(公告)日:2020-04-16
申请号:US16715008
申请日:2019-12-16
Applicant: Japan Display Inc.
Inventor: Hidekazu MIYAKE , Kazufumi WATABE , Yoshinori ISHII
Abstract: An EL display device includes a TFT substrate on which a scanning line extends in a first direction, a video signal line extends in a second direction, and an EL element having an anode, a luminous layer and a cathode. A protective film covers the scanning line, the video signal line and the EL element. A touch panel detection electrode is disposed above the protective film, and connected to a wiring which is disposed under the protective film via a through hole of the protective film. The touch panel detection electrode has an angle to intersect with the video signal line.
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公开(公告)号:US20180308869A1
公开(公告)日:2018-10-25
申请号:US16011725
申请日:2018-06-19
Applicant: Japan Display Inc.
Inventor: Isao SUZUMURA , Kazufumi WATABE , Yoshinori ISHII , Hidekazu MIYAKE , Yohei YAMAGUCHI
IPC: H01L27/12
CPC classification number: H01L27/1225 , G02F1/13306 , G02F1/136209 , G02F1/1368 , G02F2001/13685 , G02F2202/10 , G02F2202/104 , H01L27/1251 , H01L27/1259 , H01L27/3262 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/517 , H01L29/78633 , H01L29/78675 , H01L29/7869
Abstract: The object of the present invention is to make it possible to form an LIPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
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