摘要:
The invention is directed to an illuminating arrangement for selectively providing a projection microlithographic exposure apparatus with various types of illumination including conventional illumination having an adjustable coherence factor (.sigma.), illumination via an annular aperture and symmetrically inclined illumination from two or four directions. The illuminating arrangement includes a light source for emitting light; a first light collecting device for collecting a first portion of the light in a first spatial angle region of the emitted light; a first shaping device for receiving and shaping the first portion of the light into a first shaped flux of light; a second light collecting device for collecting a second portion of the light in a second spatial angle region of the emitted light; a second shaping device for receiving and shaping the second portion of the light into a second shaped flux of light; an objective defining a pupillary plane and a reticle plane downstream of the pupillary plane; and, an imaging device for imaging images of the first and second shaped fluxes of light into sectors of the pupillary plane. The objective transmits the fluxes of light to the reticle plane and the illuminating arrangement also includes a first displacing device for operating on the first shaped flux of light so as to radially and azimuthally displace the image of the first shaped flux of light in the pupillary plane and a second displacing device for operating on the second shaped flux of light so as to radially and azimuthally displace the image of the second shaped flux of light in the pupillary plane.
摘要:
Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.
摘要:
An optical system for generating a light beam for treating a substrate in a substrate plane is disclosed. The light beam has a beam length in a first dimension perpendicular to the propagation direction of the light beam and a beam width in a second dimension perpendicular to the first dimension and also perpendicular to the light propagation direction.The optical system includes a mixing optical arrangement which divides the light beam in at least one of the first and second dimensions into a plurality of light paths incident in the substrate plane in a manner superimposed on one another. At least one coherence-influencing optical arrangement is present in the beam path of the light beam and acts on the light beam to at least reduce the degree of coherence of light for at least one light path distance of one light path from at least one other light path.
摘要:
An illumination system of a microlithographic projection exposure apparatus has a pupil surface and an essentially flat arrangement of desirably individually drivable beam deviating elements for variable illumination of the pupil surface. Each beam deviating element allows deviation of a projection light beam incident on it to be achieved as a function of a control signal applied to the beam deviating element. A measurement illumination instrument directs a measurement light beam, independent of the projection light beams, onto a beam deviating element. A detector instrument records the measurement light beam after deviation by the beam deviating element. An evaluation unit determines the deviation of the projection light beam from measurement signals provided by the detector instrument.
摘要:
There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
摘要:
A microlithographic projection exposure apparatus (1) comprises an illumination system (4) with an illumination optics (5) for illuminating an illumination field in a reticle plane (6). The illumination optics (5) further includes a light distribution device (12a) which comprises a light deflection array (12) of separate elements and an optical assembly (21, 23 to 26) which converts the light intensity distribution defined by the light distribution device (12a) in a first plane (19) of the illumination optics (5) into an illumination angle distribution in the reticle plane (6). Downstream of an output coupling device (17), which is arranged in the light path between the light deflection array (12) and the reticle plane (6), a space and time resolving detection device (30) is exposed to outcoupled illumination light (31) in such a way that the detection device (30) detects a light intensity distribution corresponding to the light intensity distribution in the first plane (19). The detection device (30) allows the influence of separate elements or groups of separate elements on the light intensity distribution in the first plane (19) to be determined, particularly by varying said separate elements or groups of separate elements over time. The result is an illumination optics in which the function of the light deflection array is performed during normal operation.
摘要:
There is provided a multi-mirror-system for an illumination system, especially for lithography with wavelengths ≦193 nm. The system includes light rays traveling along a light oath from an object plane to an image plane, and an arc-shaped field in the image plane, whereby a radial direction in the middle of the arc-shaped field defines a scanning direction. The first mirror and the second mirror are arranged in the light path in such a position and having such a shape, that the edge sharpness of the arc-shaped field in the image plane is smaller than 5 mm in the scanning direction. Furthermore, the light rays are impinging on the first mirror and the second mirror with incidence angles ≦30° or ≧60° relative to a surface normal of the first and second mirror.
摘要:
An optical imaging system for a microlithography projection exposure system is used for imaging an object field arranged in an object plane of the imaging system into an image field arranged in an image plane of the imaging system. A projection objective or a relay objective to be used in the illumination system can be involved, in particular. The imaging system has a plurality of lenses that are arranged between the object plane and the image plane and in each case have a first lens surface and a second lens surface. At least one of the lenses is a double aspheric lens where the first lens surface and the second lens surface is an aspheric surface. Lenses of good quality that have the action of an asphere with very strong deformation can be produced in the case of double aspheric lenses with an acceptable outlay as regards the surface processing and testing of the lens surfaces.
摘要:
There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
摘要:
An illumination system of a microlithographic exposure apparatus has an optical axis and a beam transforming device. This device includes a first mirror with a first reflective surface having a shape that is defined by rotating a straight line, which is inclined with respect to the optical axis, around the optical axis. The device further includes a second mirror with a second reflective surface having a shape that is defined by rotating a curved line around the optical axis. At least one of the mirrors has a central aperture containing the optical axis. This device may form a zoom-collimator for an EUV illumination system that transforms a diverging light bundle into a collimated light bundle of variable shape and/or diameter.