公开(公告)号：US20110204401A1

公开(公告)日：2011-08-25

申请号：US13028780

申请日：2011-02-16

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/60

CPC classification number: H01L33/10 ,  F21K9/68 ,  H01L33/20 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a conductive support member; a reflective layer on the conductive support member; a light emitting structure on the reflective layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and an electrode on the first conductive semiconductor layer, wherein a distance between the active layer and the reflective layer satisfies 2·Φ1+Φ3=N·2π±Δ, (0≦Δ≦π/2) in which the Φ1 represents a phase change value when light vertically traveling passes through the second conductive semiconductor layer, the Φ3 represents a phase change value when the light is reflected by the reflective layer, and the N represents a natural number, and wherein the distance between the reflective layer and the active layer includes a first distance in a first region overlapping with the electrode perpendicularly to the electrode and a second distance in a second region other than the first region, the first distance being different from the second distance.

Abstract translation: 公开了一种发光器件，发光器件封装和照明系统。 发光装置包括导电支撑构件; 导电支撑构件上的反射层; 所述反射层上的发光结构包括第一和第二半导体层之间的第一导电半导体层，第二导电半导体层和有源层; 和第一导电半导体层上的电极，其中有源层和反射层之间的距离满足2·Φ1+Φ3= N·2＆pgr;±＆Dgr;（0＆nlE;＆Dgr;＆nlE;＆pgr / Φ1表示垂直行进的光通过第二导电半导体层时的相变值，Φ3表示当光被反射层反射时的相位变化值，N表示自然数， 所述有源层包括与所述电极垂直于所述电极重叠的第一区域中的第一距离，以及在所述第一区域以外的第二区域中的第二距离，所述第一距离与所述第二距离不同。

公开(公告)号：US20110186894A1

公开(公告)日：2011-08-04

申请号：US13020038

申请日：2011-02-03

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/56 ,  H01L33/60 ,  H01L33/46

CPC classification number: H01L33/44 ,  H01L33/486 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.

Abstract translation: 公开了一种发光器件封装和照明系统。 发光器件封装包括：包括空腔的子座，设置在空腔中的发光器件芯片，电连接到发光芯片的电极，形成在空腔表面上的反射层， 反射层和填充在空腔中的密封剂。

公开(公告)号：US20110186814A1

公开(公告)日：2011-08-04

申请号：US13017872

申请日：2011-01-31

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/06

CPC classification number: H01L33/58 ,  H01L33/20 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0083 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern in which a period (a) exceeds λ/n (where, λ is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(λ/n) (a (15×(λ/n). An etching depth (h) of the light extraction pattern may be equal to or greater than λ/n.

Abstract translation: 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括在第一导电类型半导体层和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构以及光提取图案，其中， 周期（a）超过λ/ n（其中，λ是从有源层发射的光的波长，n是发光结构的折射率）。 周期（a）可以在5×（λ/ n）（a（15×（λ/ n））的范围内，光提取图案的蚀刻深度（h）可以等于或大于λ/ 。

公开(公告)号：US20100181586A1

公开(公告)日：2010-07-22

申请号：US12573523

申请日：2009-10-05

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/00

CPC classification number: H01L33/382 ,  H01L2933/0083

Abstract: A light emitting device That includes a first photonic crystal structure having a reflective layer and non-metal pattern elements on the reflective layer, a second conductive semiconductor layer on both the reflective layer and the non-metal pattern elements, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer.

Abstract translation: 一种发光器件，其包括在反射层上具有反射层和非金属图案元件的第一光子晶体结构，反射层和非金属图案元件两者上的第二导电半导体层，第二 导电半导体层和有源层上的第一导电半导体层。

公开(公告)号：US20100140643A1

公开(公告)日：2010-06-10

申请号：US12628950

申请日：2009-12-01

Applicant: Hyun Kyong Cho ,  Sun Kyung KIM ,  Gyeong Geun Park

Inventor： Hyun Kyong Cho ,  Sun Kyung KIM ,  Gyeong Geun Park

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L2933/0083

Abstract: The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.

Abstract translation: 发光器件和相应的制造方法，所述发光器件包括第二电极层; 形成在所述第二电极层上的第二导电类型半导体层; 形成在所述第二导电类型半导体层上的有源层; 形成有第一光子晶体的第一导电型半导体层，其包括形成在所述有源层上的掩模层和气隙; 以及形成在所述第一导电类型半导体层上的第一电极层。

公开(公告)号：US20100093123A1

公开(公告)日：2010-04-15

申请号：US12637653

申请日：2009-12-14

Applicant: Hyun Kyong CHO ,  Sun Kyung KIM ,  Jun Ho JANG

Inventor： Hyun Kyong CHO ,  Sun Kyung KIM ,  Jun Ho JANG

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0083 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

公开(公告)号：US20090108279A1

公开(公告)日：2009-04-30

申请号：US11948828

申请日：2007-11-30

Applicant: Sun Kyung KIM

Inventor： Sun Kyung KIM

IPC: H01L33/00 ,  H01L21/02

CPC classification number: H01L33/20 ,  H01L33/44 ,  H01L33/50 ,  H01L33/505 ,  H01L33/58 ,  H01L2933/0083

Abstract: A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of −45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.

Abstract translation: 具有能够提高光提取效率和可靠性的具有光提取结构的发光器件及其制造方法。 发光器件包括具有包括发光层的多层结构的半导体层; 以及以具有单位结构的图案形成在所述半导体层上的光提取结构。 此外，每个单元结构的壁与平行于发光器件的主发光方向的虚拟垂直线成-45°至+45°的角度倾斜。