公开(公告)号：US07364020B2

公开(公告)日：2008-04-29

申请号：US10968840

申请日：2004-10-19

申请人： Johannes Ante ,  Stephan Heinrich ,  Andreas Ott

发明人： Johannes Ante ,  Stephan Heinrich ,  Andreas Ott

IPC分类号： F16D66/00

CPC分类号： G01L5/225 ,  B60T17/221 ,  F16D65/18 ,  F16D2066/005 ,  F16D2121/24 ,  F16D2125/40 ,  G01L1/2231

摘要： A force sensor for an electromechanical brake has a closed ring having a C-shaped profile that is open inwardly. Force is introduced along the inner circumference of the ring.

摘要翻译： 用于机电制动器的力传感器具有闭合的环，其具有向内敞开的C形轮廓。 力沿着环的内圆周被引入。

公开(公告)号：US06643976B2

公开(公告)日：2003-11-11

申请号：US10106146

申请日：2002-03-26

申请人： Johannes Ante ,  Christian Geiger ,  Markus Gilch ,  Hans-Peter Landgraf ,  Andreas Ott

发明人： Johannes Ante ,  Christian Geiger ,  Markus Gilch ,  Hans-Peter Landgraf ,  Andreas Ott

IPC分类号： G01L708

CPC分类号： G01L9/0055

摘要： A pressure sensor device is described that has a diaphragm acted upon by a working medium, on a first side, and a sensor chip, which is disposed on a second side of the diaphragm that is remote from the working medium. There is formed in the sensor chip a measuring bridge having four sensor elements, which form two pairs disposed parallel, and the pairs are disposed at right angles to one another. The sensor elements are disposed such that they are closely spaced apart from one another in the edge region of the sensor chip that faces toward the central point of the diaphragm.

公开(公告)号：US20080284559A1

公开(公告)日：2008-11-20

申请号：US11795219

申请日：2005-12-12

申请人： Peter Biber ,  Stephan Heinrich ,  Andreas Ott ,  Michael Schlogl

发明人： Peter Biber ,  Stephan Heinrich ,  Andreas Ott ,  Michael Schlogl

IPC分类号： G05B23/02

CPC分类号： B60H1/008 ,  B60H3/0085

摘要： The invention relates to a device and a method for controlling at least one air conducting element (15) in a motor vehicle. Said device comprises a first gas sensor (51) and a second gas sensor (52) which generate signals in accordance with the harmful gas concentration in the ambient air. An output signal that is used for triggering the air conducting element is generated with the aid of a signal evaluation unit. The aim of the invention is to create a method and a device which are used for controlling an air conducting element, accurately detect and distinguish the different development of harmful gas concentrations in the atmosphere and trigger the air conducting elements accordingly, and are embodied in an inexpensive, reliable, and durable manner. Said aim is achieved by configuring an electronic decision unit (4) that determines which of the two sensor signals is fed to a single signal evaluation unit during the current interval.

摘要翻译： 本发明涉及用于控制机动车辆中的至少一个导气元件（15）的装置和方法。 所述装置包括根据环境空气中的有害气体浓度产生信号的第一气体传感器（51）和第二气体传感器（52）。 借助于信号评估单元产生用于触发导气元件的输出信号。 本发明的目的是创造一种用于控制空气传导元件的方法和装置，精确地检测和区分大气中有害气体浓度的不同发展，并相应地触发空气传导元件，并体现在 廉价，可靠，耐用。 所述目的是通过配置电子决定单元（4）来实现的，该决定单元确定在当前间隔期间将两个传感器信号中的哪一个馈送到单个信号评估单元。

公开(公告)号：US20060001546A1

公开(公告)日：2006-01-05

申请号：US11102469

申请日：2005-04-08

申请人： Peter Biber ,  Markus Gilch ,  Stephan Heinrich ,  Andreas Ott

发明人： Peter Biber ,  Markus Gilch ,  Stephan Heinrich ,  Andreas Ott

IPC分类号： G01W1/02 ,  F24F11/00

CPC分类号： B60H1/008 ,  B60H1/00792 ,  B60H3/0085 ,  F24F11/30 ,  F24F2110/10 ,  F24F2110/20 ,  F24F2110/70 ,  F24F2130/20 ,  G01J1/4228 ,  G01J2001/4266

摘要： Sensor for determining measured variables which are suitable for controlling an air-conditioning system and other apparatuses which influence the climate of an area, including a motor vehicle, has a single sensor housing and a printed circuit board which is equipped with sensor elements for determining the measured variables and with electronic components for processing electrical signals produced by the sensor elements, as a function of the measured variables. In the sensor, at least one light-sensitive sensor element and one gas-sensitive sensor element are arranged in the single sensor housing.

摘要翻译： 用于确定适于控制空调系统的测量变量的传感器和影响包括机动车辆在内的区域的气候的其他设备具有单个传感器外壳和印刷电路板，该传感器外壳和印刷电路板配备有用于确定 测量变量和用于处理由传感器元件产生的电信号的电子部件，作为测量变量的函数。 在传感器中，至少一个感光传感器元件和一个气体敏感传感器元件布置在单个传感器外壳中。

公开(公告)号：US08828888B2

公开(公告)日：2014-09-09

申请号：US13421154

申请日：2012-03-15

申请人： Matthias Lehr ,  Joerg Hohage ,  Andreas Ott

发明人： Matthias Lehr ,  Joerg Hohage ,  Andreas Ott

IPC分类号： H01L21/02 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L24/05 ,  H01L23/3107 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/00

摘要： When forming complex metallization systems on the basis of copper, the very last metallization layer may receive contact regions on the basis of copper, the surface of which may be passivated on the basis of a dedicated protection layer, which may thus allow the patterning of the passivation layer stack prior to shipping the device to a remote manufacturing site. Hence, the protected contact surface may be efficiently re-exposed in the remote manufacturing site on the basis of an efficient non-masked wet chemical etch process.

摘要翻译： 当基于铜形成复杂的金属化系统时，最后的金属化层可以接收基于铜的接触区域，铜的表面可以在专用保护层的基础上被钝化，因此可以使图案化 在将设备运送到远程制造现场之前的钝化层堆叠。 因此，受保护的接触表面可以在有效的非掩蔽的湿化学蚀刻工艺的基础上有效地再次暴露在远程制造现场。

公开(公告)号：US20120282763A1

公开(公告)日：2012-11-08

申请号：US13102680

申请日：2011-05-06

申请人： Stephan Kronholz ,  Andreas Ott

发明人： Stephan Kronholz ,  Andreas Ott

IPC分类号： H01L21/306

CPC分类号： H01L21/30608 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/84

摘要： Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises performing at least one etching process to reduce a thickness of a P-active region of a semiconducting substrate to thereby define a recessed P-active region, performing a process in a process chamber to selectively form an as-deposited layer of a semiconductor material on the recessed P-active region, wherein the step of performing the at least one etching process is performed outside of the process chamber, and performing an etching process in the process chamber to reduce a thickness of the as-deposited layer of semiconductor material.

摘要翻译： 本文公开了形成半导体器件的方法。 在一个示例中，该方法包括执行至少一个蚀刻工艺以减小半导体衬底的P活性区域的厚度，从而限定凹陷的P活性区域，在处理室中执行选择性地形成 在凹陷的P活性区域上形成半导体材料的沉积层，其中执行所述至少一个蚀刻工艺的步骤在所述处理室的外部进行，并且在所述处理室中进行蚀刻处理以减小所述至少一个蚀刻工艺的厚度， 半导体材料的沉积层。

公开(公告)号：US08021942B2

公开(公告)日：2011-09-20

申请号：US12049548

申请日：2008-03-17

申请人： Andy Wei ,  Andrew Waite ,  Martin Trentzsch ,  Johannes Groschopf ,  Gunter Grasshoff ,  Andreas Ott

发明人： Andy Wei ,  Andrew Waite ,  Martin Trentzsch ,  Johannes Groschopf ,  Gunter Grasshoff ,  Andreas Ott

IPC分类号： H01L21/8238 ,  H01L21/70 ,  H01L27/092

CPC分类号： H01L21/82345 ,  H01L21/823462 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/84 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/7848 ,  Y10S438/926

摘要： In the process sequence for replacing conventional gate electrode structures by high-k metal gate structures, the number of additional masking steps may be maintained at a low level, for instance by using highly selective etch steps, thereby maintaining a high degree of compatibility with conventional CMOS techniques. Furthermore, the techniques disclosed herein enable compatibility to front-end process techniques and back-end process techniques, thereby allowing the integration of well-established strain-inducing mechanisms in the transistor level as well as in the contact level.

摘要翻译： 在通过高k金属栅极结构代替常规栅电极结构的工艺顺序中，例如通过使用高选择性蚀刻步骤，附加掩模步骤的数量可以保持在低水平，从而保持与常规栅极结构的高度兼容性 CMOS技术。 此外，本文公开的技术使得能够与前端处理技术和后端处理技术兼容，从而允许将已建立的应变诱发机制集成在晶体管级以及接触级中。

公开(公告)号：US08338306B2

公开(公告)日：2012-12-25

申请号：US12886765

申请日：2010-09-21

申请人： Jens Heinrich ,  Ralf Richter ,  Katja Steffen ,  Johannes Groschopf ,  Frank Seliger ,  Andreas Ott ,  Manfred Heinz ,  Andy Wei

发明人： Jens Heinrich ,  Ralf Richter ,  Katja Steffen ,  Johannes Groschopf ,  Frank Seliger ,  Andreas Ott ,  Manfred Heinz ,  Andy Wei

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L27/0629

摘要： In a replacement gate approach, the polysilicon material may be efficiently removed during a wet chemical etch process, while the semiconductor material in the resistive structures may be substantially preserved. For this purpose, a species such as xenon may be incorporated into the semiconductor material of the resistive structure, thereby imparting a significantly increased etch resistivity to the semiconductor material. The xenon may be incorporated at any appropriate manufacturing stage.

摘要翻译： 在替代栅极方法中，可以在湿化学蚀刻工艺期间有效地去除多晶硅材料，同时电阻结构中的半导体材料可以被基本保持。 为此，可以将诸如氙的物质并入电阻结构的半导体材料中，从而赋予半导体材料显着增加的蚀刻电阻率。 氙气可以在任何适当的生产阶段进行。

公开(公告)号：US08236654B2

公开(公告)日：2012-08-07

申请号：US12637112

申请日：2009-12-14

申请人： Stephan Kronholz ,  Andreas Ott

发明人： Stephan Kronholz ,  Andreas Ott

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/84

摘要： A threshold adjusting semiconductor material, such as a silicon/germanium alloy, may be provided selectively for one type of transistors on the basis of enhanced deposition uniformity. For this purpose, the semiconductor alloy may be deposited on the active regions of any transistors and may subsequently be patterned on the basis of a highly controllable patterning regime. Consequently, threshold variability may be reduced.

摘要翻译： 基于增强的沉积均匀性，可以选择性地为一种类型的晶体管提供阈值调节半导体材料，例如硅/锗合金。 为此，可以将半导体合金沉积在任何晶体管的有源区上，并且随后可以基于高度可控的图案化状态来图案化。 因此，阈值变化可能降低。

公开(公告)号：US08673087B2

公开(公告)日：2014-03-18

申请号：US12124445

申请日：2008-05-21

申请人： Frank Feustel ,  Tobias Letz ,  Christin Bartsch ,  Andreas Ott

发明人： Frank Feustel ,  Tobias Letz ,  Christin Bartsch ,  Andreas Ott

IPC分类号： B08B5/04

CPC分类号： H01L21/02063 ,  H01L21/02068 ,  H01L21/67051 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76861

摘要： A method for treating a semiconductor device includes dissolving an inert gas species in a wet chemical cleaning solution and treating a material layer of a semiconductor device with the wet chemical cleaning solution in ambient atmosphere. The inert gas species is oversaturated in the wet chemical cleaning solution in the ambient atmosphere.

摘要翻译： 一种处理半导体器件的方法包括：将惰性气体物质溶解在湿化学清洗溶液中，并在室温下用湿化学清洗溶液处理半导体器件的材料层。 惰性气体物质在周围大气中的湿化学清洗溶液中过饱和。