公开(公告)号：US20120038018A1

公开(公告)日：2012-02-16

申请号：US13196096

申请日：2011-08-02

申请人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito

发明人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/0352 ,  H01L27/14607 ,  H01L27/14663 ,  H01L27/14692 ,  H01L31/105

摘要： A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.

摘要翻译： 光电转换元件包括呈现第一导电类型并且设置在衬底上的选择区域中的第一半导体层，呈现第二导电类型并且与第一半导体层相对设置的第二半导体层，以及第三半导体层 层，其设置在第一和第二半导体层之间并且表现出基本上本征的导电类型。 第三半导体层具有与第一半导体层不接触的至少一个角部。

公开(公告)号：US08115188B2

公开(公告)日：2012-02-14

申请号：US12320307

申请日：2009-01-23

申请人： Dharam Pal Gosain ,  Makoto Takatoku ,  Yoshiharu Nakajima ,  Tsutomu Tanaka

发明人： Dharam Pal Gosain ,  Makoto Takatoku ,  Yoshiharu Nakajima ,  Tsutomu Tanaka

IPC分类号： H01L45/00 ,  G11C11/00

CPC分类号： H01L27/12 ,  G02F1/1362 ,  G09G3/3648 ,  G09G2300/088 ,  G09G2330/021 ,  H01L27/1214 ,  H01L27/24

摘要： Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.

摘要翻译： 这里公开了一种存储元件，包括薄膜晶体管的并联组合; 以及电阻变化元件，所述薄膜晶体管包括分别形成有沟道区域和位于所述沟道区域两侧的输入端子和输出端子的半导体薄膜，并且与所述沟道重叠的栅极电极 区域，通过绝缘膜成为控制端子，电阻变化元件包括连接到薄膜晶体管的输入端侧的一个导电层，连接到薄膜晶体管的输出端侧的另一导电层，至少 一个氧化物膜层设置在一个导电层和另一个导电层之间。

公开(公告)号：US20110204246A1

公开(公告)日：2011-08-25

申请号：US13027328

申请日：2011-02-15

申请人： Tsutomu Tanaka ,  Makoto Takatoku ,  Yasuhiro Yamada ,  Ryoichi Ito

发明人： Tsutomu Tanaka ,  Makoto Takatoku ,  Yasuhiro Yamada ,  Ryoichi Ito

IPC分类号： G01T1/24 ,  H01L29/04 ,  H01L27/146

CPC分类号： H01L27/14676 ,  G01T1/2018 ,  H04N5/2251 ,  H04N5/374 ,  H04N5/378

摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.

摘要翻译： 允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。 放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动 通过像素晶体管，从而恢复像素晶体管的特性。

公开(公告)号：US20110122526A1

公开(公告)日：2011-05-26

申请号：US13002738

申请日：2009-07-16

申请人： Kenji Sato ,  Tsutomu Tanaka ,  Tsutomu Nishihashi ,  Tadashi Morita ,  Kazuhiro Watanabe

发明人： Kenji Sato ,  Tsutomu Tanaka ,  Tsutomu Nishihashi ,  Tadashi Morita ,  Kazuhiro Watanabe

IPC分类号： G11B5/706 ,  G11B21/02 ,  B32B38/10

CPC分类号： G11B5/855 ,  B82Y25/00 ,  H01F1/009 ,  H01F10/3295

摘要： A manufacturing method of a magnetic recording medium includes: forming a magnetic film having an artificial lattice structure by laminating plural types of atomic layers alternately on a substrate; and separating dots, which forms a dot separation band by implanting an ion, to reduce saturation magnetization locally, into portions of the magnetic film other than plural portions of the magnetic film. Each of the plural portions is made into a magnetic dot in which information is to be magnetically recorded. The saturation magnetization of the dot separation band is smaller than that of the magnetic dot.

摘要翻译： 磁记录介质的制造方法包括：通过在基板上交替层叠多种类型的原子层来形成具有人造晶格结构的磁性膜; 以及分离点，其通过注入离子形成点分离带，以局部地将饱和磁化降低到除磁性膜的多个部分之外的部分磁性膜。 将多个部分中的每一个制成磁信号记录在磁点上。 点分离带的饱和磁化强度小于磁点的饱和磁化强度。

公开(公告)号：US07915648B2

公开(公告)日：2011-03-29

申请号：US12331159

申请日：2008-12-09

申请人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

发明人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

IPC分类号： H01L27/148

CPC分类号： H01L31/153 ,  G02F2201/58 ,  H01L27/14632 ,  H01L31/112

摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

摘要翻译： 光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度 和第二导电型半导体区域。 光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。

公开(公告)号：US20100238361A1

公开(公告)日：2010-09-23

申请号：US12280177

申请日：2007-04-04

申请人： Tsutomu Tanaka ,  Hiroshi Matsui

发明人： Tsutomu Tanaka ,  Hiroshi Matsui

IPC分类号： H04N5/60

CPC分类号： H04N5/60 ,  H04N21/439

摘要： A first band-pass filter extracts, from a first sound intermediate frequency signal, a signal having a frequency in the vicinity of a center frequency of the first sound intermediate frequency signal. Then, a mixer down converts a signal extracted by the first band-pass filter to a second sound intermediate frequency signal. A low-pass filter extracts, from the second sound intermediate frequency signal, a signal having a frequency in the vicinity of a center frequency of the second sound intermediate frequency signal or a lower frequency. With such an arrangement, FM detection can be performed preferably even if the frequency of the first sound intermediate frequency signal is deviated.

摘要翻译： 第一带通滤波器从第一声音中频信号中提取具有第一声音中频信号的中心频率附近的频率的信号。 然后，混频器将由第一带通滤波器提取的信号转换成第二声音中频信号。 低通滤波器从第二声音中频信号中提取具有在第二声音中频信号的中心频率附近的频率或较低频率的信号。 通过这样的布置，即使第一声音中频信号的频率偏离，也可以优选进行FM检测。

公开(公告)号：US20100130050A1

公开(公告)日：2010-05-27

申请号：US12622723

申请日：2009-11-20

申请人： Tsutomu Tanaka

发明人： Tsutomu Tanaka

IPC分类号： H01R4/50

CPC分类号： H01R13/743 ,  H01R13/193 ,  H01R13/6272 ,  H01R24/20 ,  H01R24/28 ,  H01R2107/00

摘要： Connection resistance (Rc) resulting from the resilient deformation of a lock arm (26) is produced in the process of connecting two housings (10, 20), and connection resistance (Rb) resulting from a resilient restoring force of a grommet (30) held in contact with a panel (P) is produced with the two housings (10, 20) properly connected. In the process of connecting the two housings (10, 20), the connection resistance (Rb) resulting from the resilient restoring force of the grommet (30) increases after the lock arm (26) is resiliently restored.

摘要翻译： 在连接两个壳体（10,20）的过程中产生由锁定臂（26）的弹性变形产生的连接电阻（Rc）和由索环（30）的弹性恢复力产生的连接电阻（Rb） 与面板（P）保持接触的两个壳体（10,20）被正确连接。 在连接两个壳体（10,20）的过程中，在锁定臂（26）弹性恢复之后，由索环（30）的弹性恢复力产生的连接电阻（Rb）增加。

公开(公告)号：US20100097838A1

公开(公告)日：2010-04-22

申请号：US12361049

申请日：2009-01-28

申请人： Tsutomu Tanaka ,  Dharam Pal Gosain

发明人： Tsutomu Tanaka ,  Dharam Pal Gosain

IPC分类号： G11C13/04 ,  H01L31/0296 ,  H01L31/112

CPC分类号： G11C13/047 ,  H01L27/14609 ,  H01L29/7869 ,  H04N5/374

摘要： An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage.

摘要翻译： 光传感器元件具有通过栅极绝缘膜与由氧化物半导体形成的半导体层相对的栅电极，与半导体层连接的源电极和漏电极，其中半导体层所接收的光量被读出为 漏极电流以相对于栅极电压的非易失性方式变化。

公开(公告)号：USD605132S1

公开(公告)日：2009-12-01

申请号：US29333060

申请日：2009-03-02

申请人： Tsutomu Tanaka ,  Takahiro Shibata

设计人： Tsutomu Tanaka ,  Takahiro Shibata

公开(公告)号：US07575464B2

公开(公告)日：2009-08-18

申请号：US12104511

申请日：2008-04-17

申请人： Yuka Kobayashi ,  Tsutomu Tanaka

发明人： Yuka Kobayashi ,  Tsutomu Tanaka

IPC分类号： H01R13/627

CPC分类号： H01R13/6272

摘要： A connector housing (20) is formed with a resiliently deformable lock arm (25) and ribs (36) are stand at opposite sides of the lock arm (25). The lock arm (25) resiliently locks a mating connector housing to lock the two connector housings in a connected state. Projections (35) project laterally from opposite lateral sides of the lock arm (25). Clearances (Q) are formed between the projections (35) and the ribs (36) by recessing the inner surfaces of the ribs (36). The clearances (Q) have channel shapes in rear view.

摘要翻译： 连接器壳体（20）形成有可弹性变形的锁定臂（25），肋（36）位于锁定臂（25）的相对侧。 锁定臂（25）弹性地锁定匹配的连接器壳体以将两个连接器壳体锁定在连接状态。 突起（35）从锁定臂（25）的相对侧面横向突出。 通过使肋（36）的内表面凹陷，在突起（35）和肋（36）之间形成间隙（Q）。 间隙（Q）在后视图中具有通道形状。