公开(公告)号：US20140328581A1

公开(公告)日：2014-11-06

申请号：US14110183

申请日：2012-04-09

Applicant: Changqing Li ,  Jun Xu ,  Wuguo Zhang ,  Haibo Zhan

Inventor： Changqing Li ,  Jun Xu ,  Wuguo Zhang ,  Haibo Zhan

IPC: F24H1/00

CPC classification number: F24H1/0018 ,  B01D11/00 ,  C22B3/02 ,  Y02P10/234

Abstract: A heater and a heating method for a wet extraction tank, said heater comprising a heating tube comprising a spiral glass tube with an air inlet and an air outlet; the air inlet is connected to a steam supply apparatus via a steam tube, and the air outlet is in communication with an apparatus containing micro-steam or hot water; the steam tube has with a pressure regulating valve for adjusting the steam pressure inside the heating tube; the glass tube is fixedly connected to the extraction tank by a wooden material fixed to the tank via a stainless steel bolt; the glass tube is fixed to the wooden material by wrapping and welding a heat and chemical resistant soft plastic sheeting. The heating method comprises maintaining the liquid inside the tank in a constant state of ebullition so that heat is evenly and uniformly distributed throughout the tank.

Abstract translation: 一种用于湿提取罐的加热器和加热方法，所述加热器包括加热管，该加热管包括具有进气口和空气出口的螺旋形玻璃管; 空气入口通过蒸汽管连接到蒸汽供应装置，并且空气出口与含有微蒸汽或热水的设备连通; 蒸汽管具有用于调节加热管内部的蒸汽压力的压力调节阀; 玻璃管通过不锈钢螺栓固定在罐体上的木质材料固定连接到提取罐; 通过缠绕和焊接耐热和耐化学腐蚀的软塑料板将玻璃管固定在木材上。 加热方法包括将罐内的液体保持在恒定的沸腾状态，使得热量均匀均匀地分布在整个罐中。

公开(公告)号：US08863925B2

公开(公告)日：2014-10-21

申请号：US13805499

申请日：2011-06-23

Applicant: John R. Antchak ,  Jun Xu

Inventor： John R. Antchak ,  Jun Xu

IPC: F16D41/20 ,  F16D13/76 ,  F16D7/02 ,  B60K25/00 ,  F16H55/36

CPC classification number: F16D41/206 ,  B60K25/00 ,  F16D3/12 ,  F16D7/022 ,  F16D13/76 ,  F16H55/36 ,  F16H2055/366

Abstract: A decoupler assembly with an input hub, an output member, and a one-way clutch. In one form, the decoupler assembly includes an annular bearing mount with a needle bearing disposed between the bearing mount and the input hub to support the output member for rotation on the input hub. In another form the decoupler assembly further comprises a torsional vibration damper that is received within an internal cavity that is bounded on opposite axial ends by the output member and a cover that is coupled to the output member.

Abstract translation: 具有输入轮毂，输出构件和单向离合器的分离器组件。 在一种形式中，分离器组件包括环形轴承座，其具有设置在轴承座和输入轮毂之间的滚针轴承，以支撑输出构件以在输入轮毂上旋转。 在另一种形式中，解耦器组件还包括扭转振动阻尼器，该扭转振动阻尼器被容纳在由输出构件在相对的轴向端部上限定的内部空腔中，以及联接到输出构件的盖子。

公开(公告)号：US08861958B2

公开(公告)日：2014-10-14

申请号：US11707812

申请日：2007-02-15

Applicant: Jun Xu ,  Nanjian Qian

Inventor： Jun Xu ,  Nanjian Qian

IPC: H04B10/00 ,  H04J14/08 ,  H04J3/16 ,  H04J3/14 ,  H04Q11/00

CPC classification number: H04B10/27 ,  H04J3/14 ,  H04J3/1694 ,  H04J14/086 ,  H04Q11/0066 ,  H04Q11/0067 ,  H04Q2011/0015 ,  H04Q2011/0064

Abstract: Methods and apparatus for providing enhanced optical networking service and performance which are particularly advantageous in terms of low cost and use of existing infrastructure, access control techniques, and components. In the exemplary embodiment, current widespread deployment and associated low cost of Ethernet-based systems are leveraged through use of an Ethernet CSMA/CD MAC in the optical domain on a passive optical network (PON) system. Additionally, local networking services are optionally provided to the network units on the PON since each local receiver can receive signals from all other users. An improved symmetric coupler arrangement provides the foregoing functionality at low cost. The improved system architecture also allows for fiber failure protection which is readily implemented at low cost and with minimal modification.

Abstract translation: 用于提供增强的光网络服务和性能的方法和装置在现有基础设施，访问控制技术和组件的低成本和使用方面特别有利。 在示例性实施例中，通过在无源光网络（PON）系统上的光域中使用以太网CSMA / CD MAC来利用当前广泛部署和相关联的基于以太网的系统的低成本。 此外，本地网络服务可选地提供给PON上的网络单元，因为每个本地接收机可以从所有其他用户接收信号。 改进的对称耦合器布置以低成本提供前述功能。 改进的系统架构还允许光纤故障保护，其以低成本容易地实现并且以最小的修改。

公开(公告)号：US08803225B2

公开(公告)日：2014-08-12

申请号：US13695341

申请日：2012-09-06

Applicant: Ning Cui ,  Renrong Liang ,  Jing Wang ,  Jun Xu

Inventor： Ning Cui ,  Renrong Liang ,  Jing Wang ,  Jun Xu

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/7827 ,  H01L29/517 ,  H01L29/66356 ,  H01L29/66666 ,  H01L29/7391

Abstract: A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor includes: a semiconductor substrate and a drain layer formed in the semiconductor substrate, in which the drain layer is first type heavily doped; an epitaxial layer formed on the drain layer, with an isolation region formed in the epitaxial layer; a buried layer formed in the epitaxial layer, in which the buried layer is second type lightly doped; a source formed in the buried layer, in which the source is second type heavily doped; a gate dielectric layer formed on the epitaxial layer, and a gate formed on the gate dielectric layer; and a source metal contact layer formed on the source, and a drain metal contact layer formed under the drain layer.

Abstract translation: 提供隧道场效应晶体管及其制造方法。 隧道场效应晶体管包括：半导体衬底和形成在半导体衬底中的漏极层，其中漏极层是重掺杂的第一类型; 形成在所述漏极层上的外延层，在所述外延层中形成隔离区; 形成在外延层中的掩埋层，其中所述掩埋层是第二类型轻掺杂的; 在掩埋层中形成的源，其中源极重掺杂; 形成在所述外延层上的栅极电介质层和形成在所述栅极介电层上的栅极; 以及形成在源极上的源极金属接触层和形成在漏极层下面的漏极金属接触层。

公开(公告)号：US08798200B2

公开(公告)日：2014-08-05

申请号：US13202929

申请日：2009-07-03

Applicant: Jin Xu ,  Jun Xu ,  Zhifeng Yuan ,  Qianzi Xu ,  Xianwei Gong ,  Bo Sun ,  Huiying Fang

Inventor： Jin Xu ,  Jun Xu ,  Zhifeng Yuan ,  Qianzi Xu ,  Xianwei Gong ,  Bo Sun ,  Huiying Fang

IPC: H04L27/36 ,  H04L1/00 ,  H04L27/34 ,  H04L1/18

CPC classification number: H04L27/3405 ,  H04L1/0066 ,  H04L1/0071 ,  H04L1/1893

Abstract: The present invention provides a constellation mapping method, and the method includes: flipping a plurality of bits in each modulation symbol unit to be mapped in part of or all of modulation symbol units to be mapped of a bit sequence to be mapped; and mapping each flipped modulation symbol unit to be mapped as a modulation symbol in a constellation. By means of the present invention, the phenomenon that consecutive bits have the same reliability can be effectively avoided by changing unevenness of reliability distribution of the consecutive bits, and at the same time, the link performance can be improved.

Abstract translation: 本发明提供一种星座映射方法，该方法包括：在要映射的比特序列映射的调制符号单元的一部分或全部中，对每个调制符号单元中的多个比特进行翻转， 并映射要映射成星座图中的调制符号的每个翻转的调制符号单元。 通过本发明，可以通过改变连续位的可靠性分布的不均匀性来有效地避免连续位具有相同可靠性的现象，同时可提高链路性能。

公开(公告)号：US08798185B2

公开(公告)日：2014-08-05

申请号：US13577789

申请日：2010-10-22

Applicant: Yijian Chen ,  Wu Yin ,  Yu Ngok Li ,  Jun Xu ,  Xun Yang

Inventor： Yijian Chen ,  Wu Yin ,  Yu Ngok Li ,  Jun Xu ,  Xun Yang

IPC: H04B7/02 ,  H04B7/06 ,  H04L1/00

CPC classification number: H04L1/0025 ,  H04B7/063 ,  H04B7/0645 ,  H04L25/03898

Abstract: The present invention discloses a method for Multiple Input Multiple Output (MIMO) channel information feedback, and the method includes: a terminal selecting part of column vectors for MIMO system feedback from a codebook matrix W corresponding to a Precoding Matrix Indicator (PMI) and marking the selected part of column vectors as Wpart; the terminal determining information O which represents high-precision vector quantification information of MIMO along with the part of column vectors Wpart according to a common representation relationship F, and feeding back the information O to a base station. The present invention also discloses a terminal and a base station which support MIMO. The present invention achieves high-precision and low-overhead channel information feedback and can well support multiple vector feedback needed by high rank (more layer multiplexing) MIMO transmission and high-precision feedback needed by low rank MIMO transmission simultaneously.

Abstract translation: 本发明公开了一种多输入多输出（MIMO）信道信息反馈的方法，该方法包括：从对应于预编码矩阵指示符（PMI）的码本矩阵W中选择一部分用于MIMO系统反馈的列向量， 所选的部分列向量为Wpart; 终端确定信息O，其表示MIMO的高精度矢量量化信息以及根据公共表示关系F的列向量Wpart的一部分，并将信息O反馈到基站。 本发明还公开了一种支持MIMO的终端和基站。 本发明实现了高精度和低开销的信道信息反馈，并且可以很好地支持高秩（多层复用）MIMO传输和低秩MIMO传输所需的高精度反馈所需的多向量反馈。

公开(公告)号：US08785938B2

公开(公告)日：2014-07-22

申请号：US13583851

申请日：2012-08-02

Applicant: Lianfeng Zhao ,  Renrong Liang ,  Mei Zhao ,  Jing Wang ,  Jun Xu

Inventor： Lianfeng Zhao ,  Renrong Liang ,  Mei Zhao ,  Jing Wang ,  Jun Xu

IPC: H01L29/786 ,  H01L29/04

CPC classification number: H01L29/78675 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66757

Abstract: A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.

Abstract translation: 提供一种形成多晶膜的方法，通过该方法形成的多晶膜和由多晶膜制造的薄膜晶体管。 该方法包括以下步骤：提供衬底; 在所述基板上形成热导体层; 蚀刻热导体层，直到基板被暴露以形成热导体图案; 在导热体层和基板上形成晶种层; 蚀刻种子层以在热导体的两个侧壁上形成晶种; 在基板上形成非晶层，热导体层和晶种; 蚀刻非晶层; 并使非晶层重结晶以形成多晶层。

公开(公告)号：US20140145314A1

公开(公告)日：2014-05-29

申请号：US13816164

申请日：2012-12-18

Applicant: JING Wang ,  Renrong Liang ,  Lei Guo ,  Jun Xu

Inventor： JING Wang ,  Renrong Liang ,  Lei Guo ,  Jun Xu

IPC: H01L29/04

CPC classification number: H01L29/04 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/0276 ,  H01L21/28255 ,  H01L21/823807 ,  H01L29/06 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/24 ,  H01L29/517 ,  H01L29/78

Abstract: A semiconductor structure with beryllium oxide is provided. The semiconductor structure comprises: a semiconductor substrate (100); and a plurality of insulation oxide layers (201, 202 . . . 20x) and a plurality of single crystal semiconductor layers (301, 302 . . . 30x) alternately stacked on the semiconductor substrate (100). A material of the insulation oxide layer (201) contacted with the semiconductor substrate (100) is any one of beryllium oxide, SiO2, SiOxNy and a combination thereof, a material of other insulation oxide layers (202 . . . 20x) is single crystal beryllium oxide.

Abstract translation: 提供了具有氧化铍的半导体结构。 半导体结构包括：半导体衬底（100）; 以及交替层叠在半导体基板（100）上的多个绝缘氧化物层（201,202,20.0x）和多个单晶半导体层（301,302,30 ...）。 与半导体衬底（100）接触的绝缘氧化物层（201）的材料是氧化铍，SiO 2，SiO x N y及其组合中的任一种，其它绝缘氧化物层（202.20x）的材料是单晶 氧化铍。

公开(公告)号：US20140054546A1

公开(公告)日：2014-02-27

申请号：US13703722

申请日：2012-10-18

Applicant: Libin Liu ,  Renrong Liang ,  Jing Wang ,  Jun Xu

Inventor： Libin Liu ,  Renrong Liang ,  Jing Wang ,  Jun Xu

IPC: H01L29/775 ,  H01L29/78 ,  H01L29/66 ,  H01L27/108

CPC classification number: H01L29/775 ,  H01L21/84 ,  H01L27/10802 ,  H01L27/10844 ,  H01L27/1203 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7841 ,  H01L29/785

Abstract: A dynamic random access memory unit and a method for fabricating the same are provided. The dynamic random access memory unit comprises: a substrate; an insulating buried layer formed on the substrate; a body region formed on the insulating buried layer and used as a charge storing region; two isolation regions formed on the body region, in which a semiconductor contact region is formed between the isolation regions and is a charge channel; a source, a drain and a channel region formed on the isolation regions and the semiconductor contact region respectively and constituting a transistor operating region which is partially separated from the charge storing region by the isolation regions and connected with the charge storing region via the charge channel; a gate dielectric layer formed on the transistor operating region, a gate formed on the gate dielectric layer; a source metal contact layer, a drain metal contact layer.

Abstract translation: 提供了动态随机存取存储单元及其制造方法。 动态随机存取存储器单元包括：衬底; 形成在基板上的绝缘掩埋层; 形成在绝缘掩埋层上并用作电荷存储区域的体区; 形成在体区的两个隔离区，其中在隔离区之间形成半导体接触区，并且是电荷通道; 分别形成在所述隔离区域和所述半导体接触区域上的源极，漏极和沟道区域，并且构成晶体管工作区域，所述晶体管工作区域由所述隔离区域部分地与所述电荷存储区域分离，并且经由所述充电沟道与所述电荷存储区域连接 ; 形成在所述晶体管工作区上的栅介质层，形成在所述栅介质层上的栅极; 源极金属接触层，漏极金属接触层。

公开(公告)号：US08642414B2

公开(公告)日：2014-02-04

申请号：US13132768

申请日：2011-01-19

Applicant: Jing Wang ,  Lei Guo ,  Jun Xu

Inventor： Jing Wang ,  Lei Guo ,  Jun Xu

IPC: H01L21/336

CPC classification number: H01L29/1054 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848

Abstract: A MOS transistor structure with an in-situ doped source and/or drain and a method for forming the same are provided. The method comprises steps of: providing a substrate; forming a high Ge content layer on the substrate; forming a gate stack on the high Ge content layer and forming a side wall of one or more layers on both sides of the gate stack; etching the high Ge content layer to form a source region and/or a drain region; and forming a source and/or a drain in the source region and/or the drain region respectively by a low-temperature selective epitaxy, and introducing a doping gas during the low-temperature selective epitaxy to heavily dope the source and/or the drain and to in-situ activate a doping element.

Abstract translation: 提供具有原位掺杂源极和/或漏极的MOS晶体管结构及其形成方法。 该方法包括以下步骤：提供衬底; 在所述基板上形成高Ge含量层; 在高Ge含量层上形成栅极叠层，并在栅叠层的两侧形成一层或多层的侧壁; 蚀刻高Ge含量层以形成源区和/或漏区; 以及通过低温选择性外延分别在源区和/或漏区中形成源极和/或漏极，并且在低温选择性外延期间引入掺杂气体以使源极和/或漏极 并原位激活掺杂元素。