公开(公告)号：US06844135B2

公开(公告)日：2005-01-18

申请号：US10614236

申请日：2003-07-08

申请人： Junichi Kon ,  Koji Nozaki ,  Ei Yano

发明人： Junichi Kon ,  Koji Nozaki ,  Ei Yano

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/38 ,  H01L21/027 ,  G03C1/73

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0382 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/117 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122

摘要： A chemically amplified resist material comprising a base resin and a photo acid generator having sensitivity at the wavelength of patterning exposure; wherein, the chemically amplified resist material further comprising an activator that generates an acid or a radical by a treatment other than the patterning exposure. A patterning method using the same is also disclosed.

摘要翻译： 一种化学放大抗蚀剂材料，其包含在图案曝光的波长下具有灵敏度的基础树脂和光酸发生剂; 其中，所述化学放大抗蚀剂材料还包含通过不同于图案曝光的处理而产生酸或基团的活化剂。 还公开了使用该图案的图案化方法。

公开(公告)号：US06794112B2

公开(公告)日：2004-09-21

申请号：US10291608

申请日：2002-11-12

申请人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

发明人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

IPC分类号： G03F7004

CPC分类号： H01L21/0274 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/312 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/128

摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

公开(公告)号：US06787288B2

公开(公告)日：2004-09-07

申请号：US10291730

申请日：2002-11-12

申请人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

发明人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

IPC分类号： G03F7004

CPC分类号： H01L21/0274 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/312 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/128

摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

公开(公告)号：US20090163039A1

公开(公告)日：2009-06-25

申请号：US12314279

申请日：2008-12-08

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  C09D183/14 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31695

摘要： A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

公开(公告)号：US07235866B2

公开(公告)日：2007-06-26

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/58 ,  H01L23/48

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

摘要翻译： 低介电膜形成材料含有溶解在溶剂中的硅氧烷树脂和聚碳硅烷。 通过使用该溶液，形成含有与硅氧烷树脂结合的硅氧烷树脂和聚碳硅烷的低电介质膜。 提供了适用于层间绝缘膜材料的低介电膜材料。 还提供了具有低介电常数膜和高可靠性的半导体器件。

公开(公告)号：US07170177B2

公开(公告)日：2007-01-30

申请号：US11115407

申请日：2005-04-27

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L23/48

CPC分类号： H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A disclosed semiconductor apparatus includes a substrate, a first insulating layer formed on the substrate, the first insulating layer including a Cu wiring part, and a second insulating layer formed on the substrate, the second insulating layer including a Cu via plug part electrically connected to the Cu wiring part. The first insulating layer is a porous insulating film having an elastic modulus of 5 GPa or more and a hardness of 0.6 GPa or more, and the second insulating layer has an elastic modulus of no less than 10 GPa and a hardness no less than 1 GPa.

摘要翻译： 所公开的半导体装置包括基板，形成在基板上的第一绝缘层，包括Cu布线部分的第一绝缘层和形成在基板上的第二绝缘层，第二绝缘层包括Cu经由插塞部分，电连接到 Cu接线部分。 第一绝缘层是具有5GPa以上的弹性模量和0.6GPa以上的硬度的多孔绝缘膜，第二绝缘层的弹性模量不小于10GPa，硬度不小于1GPa 。

公开(公告)号：US20060022357A1

公开(公告)日：2006-02-02

申请号：US11205128

申请日：2005-08-17

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： H01L23/29 ,  H01L21/31

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

公开(公告)号：US06727515B2

公开(公告)日：2004-04-27

申请号：US10102723

申请日：2002-03-22

申请人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

发明人： Yoshihiro Nakata ,  Katsumi Suzuki ,  Iwao Sugiura ,  Ei Yano

IPC分类号： H01L3524

CPC分类号： H01L21/02126 ,  C09D183/14 ,  C09D183/16 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76807 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： Porous insulation films 28, 40, 50 are formed of an insulation forming material including a silicon compound having a skeleton containing C—C bonds, a pore forming compound which is decomposed or evaporated by a heat treatment, and a solvent which dissolves the silicon compound with the pore forming compound, whereby the porous insulation film can have good mechanical strength and low dielectric constant.

摘要翻译： 多孔绝缘膜28,40,50由包含具有含有CC键的骨架的硅化合物，通过热处理分解或蒸发的成孔化合物的绝缘形成材料和溶解硅化合物的溶剂形成， 多孔绝缘膜可以具有良好的机械强度和低介电常数。

公开(公告)号：US06613834B2

公开(公告)日：2003-09-02

申请号：US09797865

申请日：2001-03-05

申请人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

发明人： Yoshihiro Nakata ,  Shun-ichi Fukuyama ,  Katsumi Suzuki ,  Ei Yano ,  Tamotsu Owada ,  Iwao Sugiura

IPC分类号： C08L8304

CPC分类号： C09D183/04 ,  C09D183/16 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  C08L83/00 ,  H01L2924/00

摘要： A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

公开(公告)号：US08207059B2

公开(公告)日：2012-06-26

申请号：US12185367

申请日：2008-08-04

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Ei Yano

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： C08G77/62 ,  C08G77/60 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/3125 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

摘要： A layer of a porous insulating film precursor is formed on or over a substrate, a layer of a specific silicon compound is then formed, this silicon compound layer is pre-cured as necessary, and the porous insulating film precursor is exposed to UV through the silicon compound layer or pre-cured layer.

摘要翻译： 在基板上或上方形成多孔绝缘膜前体层，然后形成特定硅化合物层，根据需要对该硅化合物层进行预固化，多孔绝缘膜前体通过 硅化合物层或预固化层。