System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking
    22.
    发明申请
    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking 有权
    基于有限元模型的半导体晶片卡盘的平面失真预测的系统和方法

    公开(公告)号:US20140107998A1

    公开(公告)日:2014-04-17

    申请号:US13735737

    申请日:2013-01-07

    CPC classification number: G06F17/5018 H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真(IPD)的系统和方法。 根据本公开的一个实施例,利用仿真基于IPD预测的非线性有限元(FE)接触力学模型的过程。 基于模拟的基于有限元模型的预测过程基本上更有效,并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度,并且需要计算密集模拟。 此外,还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    Systems and Methods of Advanced Site-Based Nanotopography for Wafer Surface Metrology
    23.
    发明申请
    Systems and Methods of Advanced Site-Based Nanotopography for Wafer Surface Metrology 有权
    用于晶圆表面计量的先进的基于位点的纳米形貌的系统和方法

    公开(公告)号:US20130236085A1

    公开(公告)日:2013-09-12

    申请号:US13779947

    申请日:2013-02-28

    CPC classification number: G06T7/0004 G06T5/20 G06T2207/20021 G06T2207/30148

    Abstract: Systems and methods for providing micro defect inspection capabilities for optical systems are disclosed. Each given wafer image is filtered, treated and normalized prior to performing surface feature detection and quantification. A partitioning scheme is utilized to partition the wafer image into a plurality of measurement sites and metric values are calculated for each of the plurality of measurement sites. Furthermore, transformation steps may also be utilized to extract additional process relevant metric values for analysis purposes.

    Abstract translation: 公开了用于为光学系统提供微缺陷检测能力的系统和方法。 在进行表面特征检测和定量之前,对每个给定的晶片图像进行过滤,处理和归一化。 利用分割方案将晶片图像分割成多个测量位置,并且为多个测量位置中的每一个计算度量值。 此外,为了分析目的,转换步骤也可以用于提取附加的过程相关度量值。

    Process-Induced Displacement Characterization During Semiconductor Production

    公开(公告)号:US20190333794A1

    公开(公告)日:2019-10-31

    申请号:US16019341

    申请日:2018-06-26

    Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.

    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking
    26.
    发明申请
    System and Method to Emulate Finite Element Model Based Prediction of In-Plane Distortions Due to Semiconductor Wafer Chucking 有权
    基于半导体晶片卡盘的有限元模型预测面内失真的系统和方法

    公开(公告)号:US20160283625A1

    公开(公告)日:2016-09-29

    申请号:US15172667

    申请日:2016-06-03

    CPC classification number: G06F17/5018 H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A series of Zernike basis wafer shapes process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真(IPD)的系统和方法。 根据本公开的一个实施例,利用基于IPD预测的非线性有限元(FE)接触力学模型的一系列Zernike基晶片形状处理。 基于模拟的基于有限元模型的预测过程基本上更有效,并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度,并且需要计算密集模拟。 此外,还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
    27.
    发明授权
    System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking 有权
    系统和方法来模拟基于半导体晶片夹持的面内失真预测的有限元模型

    公开(公告)号:US09430593B2

    公开(公告)日:2016-08-30

    申请号:US13735737

    申请日:2013-01-07

    CPC classification number: G06F17/5018 H01L21/67288

    Abstract: Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.

    Abstract translation: 公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真(IPD)的系统和方法。 根据本公开的一个实施例,利用仿真基于IPD预测的非线性有限元(FE)接触力学模型的过程。 基于模拟的基于有限元模型的预测过程基本上更有效,并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度,并且需要计算密集模拟。 此外,还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

    Prediction Based Chucking and Lithography Control Optimization
    28.
    发明申请
    Prediction Based Chucking and Lithography Control Optimization 审中-公开
    基于预测的卡盘和平版印刷控制优化

    公开(公告)号:US20160239600A1

    公开(公告)日:2016-08-18

    申请号:US14656422

    申请日:2015-03-12

    CPC classification number: G03F7/707 G03F7/70783

    Abstract: Prediction based systems and methods for optimizing wafer chucking and lithography control are disclosed. Distortions predicted to occur when a wafer is chucked by a chucking device are calculated and are utilized to control chucking parameters of the chucking device. Chucking parameters may include chucking pressures and chucking sequences. In addition, predicted distortions may also be utilized to facilitate application of anticipatory corrections. Controlling chucking parameters and/or applying anticipatory corrections help reducing or minimizing overlay errors.

    Abstract translation: 公开了用于优化晶片夹持和光刻控制的基于预测的系统和方法。 计算出当通过夹紧装置夹紧晶片时发生的变形,并用于控制夹紧装置的夹持参数。 夹头参数可以包括夹紧压力和夹紧顺序。 此外,还可以利用预测的失真来促进预期校正的应用。 控制夹持参数和/或应用预期校正有助于减少或最小化重叠错误。

    Systems and methods of advanced site-based nanotopography for wafer surface metrology
    29.
    发明授权
    Systems and methods of advanced site-based nanotopography for wafer surface metrology 有权
    用于晶片表面计量的先进的基于位点的纳米形貌的系统和方法

    公开(公告)号:US09177370B2

    公开(公告)日:2015-11-03

    申请号:US13779947

    申请日:2013-02-28

    CPC classification number: G06T7/0004 G06T5/20 G06T2207/20021 G06T2207/30148

    Abstract: Systems and methods for providing micro defect inspection capabilities for optical systems are disclosed. Each given wafer image is filtered, treated and normalized prior to performing surface feature detection and quantification. A partitioning scheme is utilized to partition the wafer image into a plurality of measurement sites and metric values are calculated for each of the plurality of measurement sites. Furthermore, transformation steps may also be utilized to extract additional process relevant metric values for analysis purposes.

    Abstract translation: 公开了用于为光学系统提供微缺陷检测能力的系统和方法。 在进行表面特征检测和定量之前,对每个给定的晶片图像进行过滤,处理和归一化。 利用分割方案将晶片图像分割成多个测量位置,并且为多个测量位置中的每一个计算度量值。 此外,为了分析目的,转换步骤也可以用于提取附加的过程相关度量值。

    Predictive Modeling Based Focus Error Prediction
    30.
    发明申请
    Predictive Modeling Based Focus Error Prediction 有权
    基于预测模型的焦点误差预测

    公开(公告)号:US20150302312A1

    公开(公告)日:2015-10-22

    申请号:US14457706

    申请日:2014-08-12

    Abstract: Predictive modeling based focus error prediction method and system are disclosed. The method includes obtaining wafer geometry measurements of a plurality of training wafers and grouping the plurality of training wafers to provide at least one training group based on relative homogeneity of wafer geometry measurements among the plurality of training wafers. For each particular training group of the at least one training group, a predictive model is develop utilizing non-linear predictive modeling. The predictive model establishes correlations between wafer geometry parameters and focus error measurements obtained for each wafer within that particular training group, and the predictive model can be utilized to provide focus error prediction for an incoming wafer belonging to that particular training group.

    Abstract translation: 公开了基于预测建模的聚焦误差预测方法和系统。 该方法包括获得多个训练晶片的晶片几何测量,并且基于多个训练晶片之间的晶片几何测量的相对均匀性,分组多个训练晶片以提供至少一个训练组。 对于至少一个训练组的每个特定训练组,利用非线性预测建模来开发预测模型。 该预测模型建立晶片几何参数和该特定训练组内的每个晶片获得的聚焦误差测量值之间的相关性,并且该预测模型可用于为属于该特定训练组的输入晶片提供聚焦误差预测。

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