公开(公告)号：US06632346B2

公开(公告)日：2003-10-14

申请号：US09897947

申请日：2001-07-05

申请人： Kozo Arao ,  Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

发明人： Kozo Arao ,  Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

IPC分类号： C25D1100

CPC分类号： H01G9/2027 ,  C25D9/08 ,  C25D21/02 ,  H01L31/03921 ,  H01L31/1836 ,  Y02E10/542 ,  Y02P70/521

摘要： The present process for electrodepositing a zinc oxide film comprises the steps of immersing a substrate and an opposing electrode in an electrodeposition bath which contains zinc nitrate and is kept heated, and forming the zinc oxide film on the substrate by passing a current between the substrate and the opposing electrode, wherein the process further includes a step of trapping the particles of zinc oxide precipitated in the electrodeposition bath by circulating or stirring the bath before the formation of the zinc oxide film, whereby the present process can prevent the generated zinc oxide powder from depositing on the surfaces of the substrate and the zinc oxide film formed by electrodeposition when restarting or starting the formation of a zinc oxide film by the electrodeposition using an electrodeposition apparatus, and hence the formation of a uniform zinc oxide film free from defects.

摘要翻译： 本发明的电沉积氧化锌膜的方法包括以下步骤：将基材和相对电极浸入含有硝酸锌的电沉积浴中并保持加热，并通过在基板和基板之间传递电流而在基板上形成氧化锌膜 所述对置电极，其中，所述方法还包括通过在形成所述氧化锌膜之前循环或搅拌所述浴来捕集在所述电沉积浴中析出的氧化锌颗粒的步骤，由此本发明的方法可以防止所产生的氧化锌粉末 当通过使用电沉积装置的电沉积来重新启动或开始形成氧化锌膜时，通过电沉积形成的基板和氧化锌膜的表面上沉积，从而形成均匀的没有缺陷的氧化锌膜。 PTEXT>

公开(公告)号：US06471848B1

公开(公告)日：2002-10-29

申请号：US09248891

申请日：1999-02-12

申请人： Kozo Arao ,  Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

发明人： Kozo Arao ,  Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

IPC分类号： C25D548

CPC分类号： H01L31/02167 ,  C23C8/40 ,  C25D5/48 ,  C25D7/0621 ,  C25D9/08 ,  Y02E10/50 ,  Y10S205/917

摘要： This invention provides an electrodeposition apparatus, comprising at least one electrodeposition vessel for supplying a current between a substrate and an electrode in an electrodeposition bath to form an oxide film or the substrate and a rinsing means for rinsing the substrate after passing the electrodeposition tank with water, wherein a humidifying means for preventing drying of at least the film forming surface of the substrate is provided along the transporting path of the substrate at least at the exit side of the electrodeposition vessel and an oxide film forming method. Thus a uniform oxide film without unevenness can be formed on the substrate.

摘要翻译： 本发明提供了一种电沉积装置，其包括至少一个电沉积容器，用于在电沉积浴中在基底和电极之间提供电流以形成氧化膜或基底;以及漂洗装置，用于在使电沉积槽通过水后漂洗基底 其特征在于，至少在所述电沉积容器的出口侧，沿着所述基板的输送路径设置防止至少所述基板的成膜面干燥的加湿机构和氧化膜形成方法。 因此，可以在基板上形成不均匀的均匀的氧化膜。

公开(公告)号：US06383359B2

公开(公告)日：2002-05-07

申请号：US09824041

申请日：2001-04-03

申请人： Kozo Arao ,  Hideo Tamura ,  Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

发明人： Kozo Arao ,  Hideo Tamura ,  Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

IPC分类号： C23C2800

CPC分类号： H01L31/1884 ,  C25D9/08 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/056 ,  H01L31/206 ,  Y02E10/52 ,  Y02P70/521 ,  Y10S428/935 ,  Y10T428/12549 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/12639 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12757 ,  Y10T428/12764 ,  Y10T428/12979 ,  Y10T428/12986 ,  Y10T428/265

摘要： Provided are a substrate with a zinc oxide layer, in which at least a zinc oxide layer is provided on a support substrate, wherein the zinc oxide layer comprises a zinc oxide layer having the c axis perpendicular to the support substrate and a zinc oxide layer having the c axis slantindicular to the support substrate in the order from the side of the support substrate; and a photovoltaic device in which a semiconductor layer is formed on the substrate with the zinc oxide layer. Thus provided is the inexpensive photovoltaic device with excellent reflective performance and optical confinement effect and with high photoelectric conversion efficiency.

摘要翻译： 本发明提供一种具有氧化锌层的基板，其中至少在支撑基板上设置有氧化锌层，其中氧化锌层包括具有垂直于支撑基板的c轴的氧化锌层和具有与支撑基板垂直的氧化锌层， c轴从支撑基板的一侧依次倾斜到支撑基板; 以及在氧化锌层的基板上形成有半导体层的光电转换装置。 因此提供了具有优异的反射性能和光限制效应以及高光电转换效率的便宜的光电器件。

公开(公告)号：US5741615A

公开(公告)日：1998-04-21

申请号：US170247

申请日：1994-06-02

申请人： Keishi Saitoh ,  Kozo Arao ,  Tatsuyuki Aoike

发明人： Keishi Saitoh ,  Kozo Arao ,  Tatsuyuki Aoike

IPC分类号： G03G5/082 ,  H01L31/0376 ,  H01L31/20 ,  G03G15/02 ,  G03G15/08

CPC分类号： H01L31/206 ,  G03G5/08214 ,  G03G5/08221 ,  H01L31/03762 ,  H01L31/202 ,  Y02E10/548

摘要： A light receiving member comprising a substrate and a light receiving layer disposed on said substrate, said light receiving layer being composed of a non-Si (H,X) material containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), characterized in that said light receiving layer further contains at least chromium atoms (Cr), iron atoms (Fe)f nickel atoms (Ni), sodium atoms (Na), and magnesium atoms (Mg) respectively in an amount of 0.9 atomic ppm or less. The light receiving member is suitable for use as electronic devices such as electrophotographic light receiving members, solar cells, and the like, wherein it stably and continuously exhibits desirable characteristics without being deteriorated even upon repeated use over a long period of time.

摘要翻译： PCT No.PCT / JP93 / 00525 Sec。 371日期：1994年6月2日 102（e）日期1994年6月2日PCT 1993年4月23日提交的光接收部件包括基板和设置在所述基板上的受光层，所述光接收层由非Si（H，X）材料 含有硅原子（Si）作为基体和选自氢原子（H）和卤素原子（X）中的至少一种原子，其特征在于，所述光接收层还含有至少铬原子（Cr） ，铁原子（Fe）f镍原子（Ni），钠原子（Na）和镁原子（Mg）分别为0.9原子ppm以下。 光接收元件适用于诸如电子照相光接收元件，太阳能电池等的电子器件，其中即使长时间反复使用也能稳定且连续地显示所需的特性而不会劣化。

公开(公告)号：US5130103A

公开(公告)日：1992-07-14

申请号：US752922

申请日：1991-08-30

申请人： Kenji Yamagata ,  Hideya Kumomi ,  Hiroyuki Tokunaga ,  Kozo Arao

发明人： Kenji Yamagata ,  Hideya Kumomi ,  Hiroyuki Tokunaga ,  Kozo Arao

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L27/142 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/1804 ,  C30B25/02 ,  C30B25/18 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/03529 ,  H01L31/0475 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/31504 ,  Y10T428/31678

摘要： Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of the deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.

公开(公告)号：US4523803A

公开(公告)日：1985-06-18

申请号：US350063

申请日：1982-02-18

申请人： Kozo Arao ,  Tadashi Sato

发明人： Kozo Arao ,  Tadashi Sato

IPC分类号： G02B26/10 ,  G02B6/12 ,  G02B6/30 ,  G02B6/34 ,  G02F1/335 ,  H04N1/12 ,  G02B5/14

CPC分类号： G02B6/12007 ,  G02B6/12004 ,  G02B6/30 ,  G02F1/335 ,  H04N1/12 ,  H04N1/1275 ,  H04N1/1295

摘要： A novel optical scanning device which utilizes the light integrating technique is provided. In the device, a light beam is deflected by forming a light deflecting portion and a condensing thin film lens on a thin film waveguide path and further, the deflected light is transmitted by a transmission path bundle wider in the light exit portion thereof than in the light entrance portion thereof. The device is a compact optical scanning device which can scan a wider area at high speed.

摘要翻译： 提供一种利用光集成技术的新型光学扫描装置。 在该装置中，通过在薄膜波导路径上形成光偏转部和聚光薄膜透镜来使光束偏转，此外，偏转光通过其光出射部较宽的透射路径束透射， 光入射部分。 该装置是一种紧凑的光学扫描装置，可以高速扫描更广泛的区域。

公开(公告)号：US4517269A

公开(公告)日：1985-05-14

申请号：US486940

申请日：1983-04-20

申请人： Isamu Shimizu ,  Kozo Arao

发明人： Isamu Shimizu ,  Kozo Arao

IPC分类号： G03G5/082 ,  G03G5/14

CPC分类号： G03G5/082

摘要： A photoconductive member comprises a support for a photoconductive member, a first amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, said first and second layer regions being provided successively from the side of said support; and a second amorphous layer comprising an amorphous material containing silicon atoms and carbon atoms.

摘要翻译： 感光构件包括用于感光体的支撑体，第一非晶层，其具有包括含有硅原子和锗原子的非晶态材料的第一层区域和包含含有硅原子并具有光电导性的非晶态材料的第二层区域的层结构， 所述第一和第二层区域从所述支撑体的一侧依次提供; 以及包含含有硅原子和碳原子的无定形材料的第二非晶层。

公开(公告)号：US06733650B2

公开(公告)日：2004-05-11

申请号：US09897012

申请日：2001-07-03

申请人： Yuichi Sonoda ,  Kozo Arao ,  Noboru Toyama ,  Yusuke Miyamoto

发明人： Yuichi Sonoda ,  Kozo Arao ,  Noboru Toyama ,  Yusuke Miyamoto

IPC分类号： C25D706

CPC分类号： C25D9/08 ,  C25D7/0614 ,  C25D21/18

摘要： Disclosed are a process for producing a zinc oxide film comprising the steps of transporting a conductive long substrate via above at least one electrode comprised of zinc in an electrodeposition bath held in an electrodeposition tank and applying an electric field between the electrode and the conductive long substrate, thereby forming a zinc oxide film on the conductive long substrate, the process comprising a first step of forming the zinc oxide film on a part of the conductive long substrate; a second step of stopping the application of the electric field and the transportation; and a third step of bringing at least a region of a part of the conductive long substrate being in contact with the electrodeposition bath in the second step into non-contact with the electrodeposition bath, and an apparatus suitably used for the process. The process and apparatus enables high-quality zinc oxide films to be produced.

摘要翻译： 公开了一种生产氧化锌膜的方法，包括以下步骤：将导电长基材经由上述至少一个由锌组成的电极输送到保持在电沉积槽中的电沉积浴中并在电极和导电长基板之间施加电场 从而在导电性长基板上形成氧化锌膜，该方法包括在导电性长基板的一部分上形成氧化锌膜的第一工序; 停止电场和运输的应用的第二步; 以及第三步骤，使得在第二步骤中的导电长基板的与电沉积浴接触的部分的至少一部分区域与电沉积浴非接触，以及适合用于该方法的设备。 该方法和装置能够生产出高质量的氧化锌膜。

公开(公告)号：US06592739B1

公开(公告)日：2003-07-15

申请号：US09722652

申请日：2000-11-28

申请人： Yuichi Sonoda ,  Kozo Arao ,  Noboru Toyama ,  Yusuke Miyamoto

发明人： Yuichi Sonoda ,  Kozo Arao ,  Noboru Toyama ,  Yusuke Miyamoto

IPC分类号： C25D706

CPC分类号： H01L31/076 ,  C23C28/322 ,  C23C28/345 ,  C25D5/028 ,  C25D5/48 ,  C25D7/0614 ,  C25D9/04 ,  H01L31/1836 ,  Y02E10/548

摘要： Disclosed are an electrodeposition process comprising the steps of transporting a substrate in an electrodeposition bath, and forming a film on the substrate, which process further comprises the step of removing particles from the surface of the substrate; and an electrodeposition apparatus comprising an electrodeposition tank for holding therein an electrodeposition bath, a mechanism for transporting a continuous-length-substrate while holding the substrate thereon, and an opposing electrode, which apparatus further comprises a mechanism for removing particles from the surface of the continuous-length substrate. These can provide a process and an apparatus by and in which dust in the bath or any particles due to film-peeling from electrodes can be prevented from causing difficulties such as impact marks in a film-deposited substrate during its transport, to form a good-quality electrodeposited film.

摘要翻译： 公开了电沉积方法，其包括以下步骤：在电沉积浴中输送基底，并在基底上形成膜，该方法还包括从基底表面去除颗粒的步骤; 以及电沉积装置，其包括用于保持电沉积浴的电沉积槽，用于在保持基板的同时保持基板的同时输送连续长度基板的机构，以及相对电极，该装置还包括用于从其表面去除颗粒的机构 连续长度衬底。 这些可以提供一种工艺和装置，其中可以防止浴中的灰尘或由于电极的膜剥离引起的任何颗粒在运输过程中在膜沉积基材中引起诸如冲击痕的困难，形成良好的 质量电沉积膜。

公开(公告)号：US06464762B1

公开(公告)日：2002-10-15

申请号：US09819039

申请日：2001-03-21

申请人： Kozo Arao

发明人： Kozo Arao

IPC分类号： C25D900

CPC分类号： H01L31/022466 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

摘要： A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the counter electrode thereby causing indium oxide film formation on the substrate is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film forming method are further provided.

摘要翻译： 一种通过将基板和对电极浸入至少含有硝酸盐和铟离子的水溶液中并在基板和对电极之间流动电流从而形成氧化铟膜的方法，用于在导电基板上形成氧化铟膜 在基板上提供。 还提供了一种用于半导体元件的基板和使用该膜形成方法制造的光电元件。还公开了通过无电沉积方法形成氧化铟膜的水溶液，其至少含有硝酸盐和铟离子和酒石酸盐。 还提供了一种通过使用该水溶液的无电沉积工艺在衬底上形成氧化铟膜的薄膜形成方法，以及使用该成膜方法制造的半导体元件用基板和光电元件。