公开(公告)号：US5429995A

公开(公告)日：1995-07-04

申请号：US94423

申请日：1993-07-16

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 如图4所示，P / = 2x1011×10-E / 45,10（E）（B）

公开(公告)号：US5236895A

公开(公告)日：1993-08-17

申请号：US735175

申请日：1991-07-23

申请人： Yukio Nishiyama ,  Shichio Kawai ,  Tomoji Kawai ,  Hitoshi Tabata ,  Osamu Murata ,  Junzo Fujioka

发明人： Yukio Nishiyama ,  Shichio Kawai ,  Tomoji Kawai ,  Hitoshi Tabata ,  Osamu Murata ,  Junzo Fujioka

IPC分类号： C23C14/00 ,  C23C14/08 ,  H01L39/24

CPC分类号： C23C14/087 ,  C23C14/0021 ,  H01L39/2448 ,  Y10S505/73 ,  Y10S505/732

摘要： There is provided in a process for depositing a metal oxide superconducting film on a substrate by laser sputtering, the improvement which comprises carrying out the deposition of the metal oxide superconducting film in the presence of a gas having higher oxidation potential than oxygen.

摘要翻译： 在通过激光溅射在基板上沉积金属氧化物超导膜的方法中提供了改进，其包括在具有比氧更高的氧化电势的气体的存在下进行金属氧化物超导膜的沉积。

公开(公告)号：US4849168A

公开(公告)日：1989-07-18

申请号：US120070

申请日：1987-11-12

申请人： Yukio Nishiyama ,  Takuya Miyashita ,  Toshiharu Noda ,  Susumu Isobe

发明人： Yukio Nishiyama ,  Takuya Miyashita ,  Toshiharu Noda ,  Susumu Isobe

IPC分类号： C22C14/00

CPC分类号： C22C14/00

摘要： Disclosed are Ti-Al alloys having increased ductility and Ti-Al alloys having increased ductility and lowered melting points, in both of which the main constituent phase is an intermetallic compound, TiAl.The Ti-Al alloys having increased ductility essentially consisting of Al: 28-38%, and B: 0.005-0.3%, the balance being Ti and inevitable impurities.Since the alloys of this type have good processability, they are suitable as materials for mechanical parts of rotating or reciprocating systems, where high heat-resistance and high specific strength are required.The Ti-Al alloys having increased ductility as well as lowered melting points essentially consisting of Al: 28-38%, one or two of Ni: 0.05-3.0% and Si: 0.05-3.0%, and the balance being Ti and inevitable impurities. Optionally, this alloy further contains B: 0.005-0.3%.The alloy of this type is, in addition to the above use, suitable for producing machine parts made by precision casting technology.

公开(公告)号：US4569880A

公开(公告)日：1986-02-11

申请号：US725200

申请日：1985-04-19

申请人： Yukio Nishiyama ,  Kazuhiko Yamamoto ,  Munehiko Sanada ,  Yukio Okada ,  Toshikatsu Miura

发明人： Yukio Nishiyama ,  Kazuhiko Yamamoto ,  Munehiko Sanada ,  Yukio Okada ,  Toshikatsu Miura

IPC分类号： B62D25/00 ,  B29C35/02 ,  B29C61/06 ,  B29D99/00 ,  B32B5/18 ,  B32B5/20 ,  B32B5/28 ,  B32B7/10 ,  B60J5/00 ,  B60J5/04 ,  B60R13/00 ,  B60R13/02 ,  B62D25/02 ,  B32B3/10

CPC分类号： B60J5/0454 ,  B29C35/0272 ,  B29C61/065 ,  B29D99/0017 ,  B32B5/18 ,  B60J5/0452 ,  Y10T428/24496 ,  Y10T428/24744 ,  Y10T428/24752 ,  Y10T428/24942

摘要： A reinforcing adhesive sheet comprising: a thermosetting reinforcing resin sheet containing a reinforcing material in an unhardened or semi-hardened state; and a bead-forming material provided on the thermosetting reinforcing resin sheet, the bead-forming material being narrower than the thermosetting reinforcing resin sheet and forming a bead-like projection prior to hardening the thermosetting reinforcing resin sheet, wherein the bead-forming material is a flattened material produced by flattening an elastic foamed body containing a holding agent in voids thereof, the flattened form being maintained by the holding agent, and the bead-forming material is capable of recovering its original foamed form upon heating.

摘要翻译： 1.一种增强粘合片，其特征在于，包括：含有未硬化或半硬化状态的增强材料的热固性增强树脂片; 以及设置在热固性增强树脂片上的珠粒形成材料，珠粒形成材料比热固性增强树脂片窄，并且在硬化热固性增强树脂片之前形成珠状突起，其中珠形成材料为 通过在其空隙中使含有保持剂的弹性发泡体变平而制成的扁平材料，平坦化形式由保持剂维持，并且胎圈形成材料能够在加热时回收其原始的发泡形式。