公开(公告)号：US07755777B2

公开(公告)日：2010-07-13

申请号：US12517122

申请日：2007-10-31

申请人： Satoshi Sakai ,  Masami Ilda ,  Kohei Kawazoe

发明人： Satoshi Sakai ,  Masami Ilda ,  Kohei Kawazoe

IPC分类号： G01B11/06

CPC分类号： G01B11/0633 ,  G01B11/0683 ,  G01B11/303

摘要： An object is to reduce film thickness measurement error. Illumination light having different wavelengths is radiated onto a plurality of samples in which thin films having different film qualities and film thicknesses are provided on substrates, evaluation values related to the amounts of transmitted light when the illumination light of each wavelength is radiated are measured, film thickness characteristics, showing the relationship between the evaluation values and the film thicknesses for each film quality, are formed at each wavelength based on the measurement results, and among the film thickness characteristics, a wavelength at which a measurement difference between the evaluation values caused by the film qualities is in a predetermined range is selected.

摘要翻译： 目的是减少膜厚测量误差。 将具有不同波长的照明光照射到多个样品上，其中测量具有不同膜质量和薄膜厚度的薄膜，在辐射每个波长的照明光时与透射光量相关的评估值，膜 基于测量结果，在每个波长处形成表现出每个膜质量的评估值和膜厚度之间的关系的厚度特性，以及膜厚特性之间的测量差异由波长 选择膜质量在预定范围内。

公开(公告)号：US20100067010A1

公开(公告)日：2010-03-18

申请号：US12517200

申请日：2007-10-31

申请人： Satoshi Sakai ,  Yoichiro Tsumura ,  Masami Iida ,  Kohei Kawazoe

发明人： Satoshi Sakai ,  Yoichiro Tsumura ,  Masami Iida ,  Kohei Kawazoe

IPC分类号： G01J3/46 ,  H01L21/66 ,  G01N21/55 ,  G01N21/27

CPC分类号： G01N21/8914 ,  G01N21/65 ,  G01N21/8422 ,  H01L22/12

摘要： An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not.

摘要翻译： 目的是提高生产效率，减轻操作人员的负担。 将光照射在用于薄膜硅器件的晶体硅膜上，检测由晶体硅膜反射的反射光，测量检测到的反射光的亮度参数，以及晶体硅膜的膜质量评估 根据亮度的参数是否在预定的适当范围内执行。

公开(公告)号：US20090208141A1

公开(公告)日：2009-08-20

申请号：US12240573

申请日：2008-09-29

申请人： Satoshi Kubo ,  Satoshi Sakai ,  Koichi Kitagawa ,  Yasunori Taniguchi ,  Takayuki Kawanaka ,  Kiyoto Kosaka

发明人： Satoshi Kubo ,  Satoshi Sakai ,  Koichi Kitagawa ,  Yasunori Taniguchi ,  Takayuki Kawanaka ,  Kiyoto Kosaka

IPC分类号： G06K9/20

CPC分类号： H04N1/32101 ,  H04N1/00212 ,  H04N1/00236 ,  H04N1/00241 ,  H04N2201/0065 ,  H04N2201/0081 ,  H04N2201/0098 ,  H04N2201/3222

摘要： An image processor comprising a control unit, wherein the control unit includes an obtaining unit that obtains image data generated as a result of reading a document by a reader in which a predetermined document reading condition is set; a selecting unit that allows a user to select an intended use of the image data obtained by the obtaining unit out of a plurality of the intended uses set in advance; a processing unit that processes the image data obtained by the obtaining unit according to an image processing condition suitable for the intended use selected by the selecting unit; and a transferring unit that transfers the image data after being processed by the processing unit to an application suitable for the intended use selected by the selecting unit.

摘要翻译： 一种包括控制单元的图像处理器，其中所述控制单元包括：获取单元，其获取由设置了预定文档读取条件的读取器读取文档的结果生成的图像数据; 选择单元，其允许用户从预先设定的多个预期用途中选择由获取单元获得的图像数据的预期用途; 处理单元，其根据由所述选择单元选择的适合所述预期用途的图像处理条件处理由所述获取单元获得的图像数据; 以及传送单元，其在由处理单元处理之后将图像数据传送到由选择单元选择的适合于预期用途的应用。

公开(公告)号：US20080073620A1

公开(公告)日：2008-03-27

申请号：US11632055

申请日：2005-09-16

申请人： Akira Taniguchi ,  Satoshi Sakai ,  Hiroyuki Nakagawa ,  Kazuhisa Ishida ,  Kiyomitsu Terashima

发明人： Akira Taniguchi ,  Satoshi Sakai ,  Hiroyuki Nakagawa ,  Kazuhisa Ishida ,  Kiyomitsu Terashima

IPC分类号： H01B1/24

CPC分类号： C08L77/00 ,  C08K3/04 ,  C08L51/06 ,  C08L77/02 ,  C08L77/06 ,  C08L2205/02 ,  C08L2205/03 ,  C08L2205/035 ,  C08L2666/06

摘要： An electrically conductive resin composition of a polyamide type, characterized in that, (A) 95 to 40% by mass of polyamide resin, (B) 5 to 30% by mass of electrically conductive carbon black, (C) 10 to 40% by mass of an ethylene-α-olefin copolymer having a reactive functional group which is able to react with a terminal group of the polyamide resin and/or an amide group of the main chain and (D) 1 to 10% by mass of a high-density polyethylene resin are compounded; the polyamide resin (A) forms a continuous phase; the ethylene-α-olefin copolymer (C) in particles having an average particle diameter of not more than 2 μm is present by being dispersed in the continuous phase of the polyamide resin (A); and not less than 80% by mass of the electrically conductive carbon black (B) is present by being dispersed in the polyamide resin phase (A) which is a continuous phase, as well as a cap for fuel tank comprising it.

摘要翻译： 一种聚酰胺类导电性树脂组合物，其特征在于，（A）95〜40质量％的聚酰胺树脂，（B）5〜30质量％的导电性炭黑，（C）10〜40质量％ 具有能够与聚酰胺树脂的端基和/或主链的酰胺基反应的反应性官能团的乙烯-α-烯烃共聚物的质量为（D）为1〜10质量％ 复合密度聚乙烯树脂; 聚酰胺树脂（A）形成连续相; 通过分散在聚酰胺树脂（A）的连续相中，存在平均粒径不大于2μm的颗粒中的乙烯-α-烯烃共聚物（C）。 并且不少于80质量％的导电性炭黑（B）通过分散在作为连续相的聚酰胺树脂相（A）中而存在，以及包含它的燃料箱盖。

公开(公告)号：US20070152172A1

公开(公告)日：2007-07-05

申请号：US11682800

申请日：2007-03-06

申请人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayshi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

发明人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayshi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

IPC分类号： A61N5/00

CPC分类号： G02B27/0006 ,  B08B7/0035 ,  B08B17/00 ,  G02B1/14

摘要： The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH— ions, ozone, O2— ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.

摘要翻译： 本发明的目的是防止或抑制光学系统的劣化，这些光学系统确定了传递诸如光透射，衍射，反射，光谱产生和干扰的效果的光学装置的寿命，以及这些组合。 ，减少窗户更换等维护操作的频率，降低这种操作的成本。 本发明的特征在于产生具有活性能量的近真空区以激发碳的氧化反应的步骤，其中近真空区面向光学系统的照明表面; 在近真空区产生负离子或自由基，例如包含氧原子的不稳定的化学种子，例如OH自由基，OH-离子，臭氧，O 2 - 离子，O-自由基; 以及通过使沉积的碳与负离子或自由基反应来除去或减少沉积在照明表面上的积累的碳。 更具体地说，根据本发明的方法的特征在于，在供给含有氧原子的气体流（例如水气或氧化气体（例如水蒸气，氧气，过氧化氢，臭氧或混合气体 所述具有惰性气体（包括空气）的气体）进入近真空区域，从而通过激发累积的碳与所提供的活性能的氧化反应去除或减少沉积在照明表面上的积聚的碳。

公开(公告)号：US07190512B2

公开(公告)日：2007-03-13

申请号：US10833998

申请日：2004-04-29

申请人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

发明人： Satoshi Sakai ,  Shigenori Tsuruga ,  Hideo Yamakoshi ,  Shizuma Kuribayashi ,  Minoru Danno ,  Hiroshi Futami ,  Noriko Yamazaki

IPC分类号： G02B1/00 ,  G06K7/10

CPC分类号： G02B27/0006 ,  B08B7/0035 ,  B08B17/00 ,  G02B1/14

摘要： The objectives of the present invention are to prevent or inhibit the deterioration of optical systems that determine the longevity of an optical apparatus which delivers effects such as light transmission, diffraction, reflection, spectrum generation, and interference, and these combinations, and by so doing, decrease the frequency of maintenance operations such as window replacement and to reduce the costs for such operations. This invention is characterized by steps of creating a near vacuum zone with a presence of active energy to excite an oxidation reaction of carbon wherein the near vacuum zone faces the lighting surfaces of the optical system; generating negative ions or radicals in the near vacuum zone such as unstable chemical seeds containing oxygen atoms, such as OH radicals, OH− ions, ozone, O2− ions, O-radicals; and removing or reducing the accumulated carbon which deposits on the lighting surface, by reacting the deposited carbon with the negative ions or radicals. More specifically, the method according to this invention is characterized by the step of supplying active energy while supplying a flow of gases containing oxygen atoms such as water gas or oxidizing gas (for example, water vapor, oxygen, hydrogen peroxide, ozone or mixtures of said gases with inactive gases (including air)) into the near vacuum zone, thereby removing or reducing the accumulated carbon which deposits on the lighting surface by exciting the oxidation reaction of the accumulated carbon with the supplied active energy.

摘要翻译： 本发明的目的是防止或抑制光学系统的劣化，这些光学系统确定了传递诸如光透射，衍射，反射，光谱产生和干扰的效果的光学装置的寿命，以及这些组合。 ，减少窗户更换等维护操作的频率，降低这种操作的成本。 本发明的特征在于产生具有活性能量的近真空区以激发碳的氧化反应的步骤，其中近真空区面向光学系统的照明表面; 在近真空区域产生负离子或自由基，例如含有氧原子的不稳定的化学种子，例如OH基，OH - ，O 2 - ， - O - 离子，O-自由基; 以及通过使沉积的碳与负离子或自由基反应来除去或减少沉积在照明表面上的积累的碳。 更具体地说，根据本发明的方法的特征在于，在供给含有氧原子的气体流（例如水气或氧化气体（例如水蒸气，氧气，过氧化氢，臭氧或混合气体 所述具有惰性气体（包括空气）的气体）进入近真空区域，从而通过激发累积的碳与所提供的活性能的氧化反应去除或减少沉积在照明表面上的积聚的碳。

公开(公告)号：US20060275969A1

公开(公告)日：2006-12-07

申请号：US11503161

申请日：2006-08-14

申请人： Satoshi Sakai ,  Daichi Matsumoto ,  Katsuyuki Asaka ,  Masatoshi Hasegawa ,  Kazutaka Mori

发明人： Satoshi Sakai ,  Daichi Matsumoto ,  Katsuyuki Asaka ,  Masatoshi Hasegawa ,  Kazutaka Mori

IPC分类号： H01L21/8234

CPC分类号： H01L27/10894 ,  H01L27/105 ,  H01L27/10814 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/1104 ,  H01L27/1116

摘要： Mutual diffusion of impurities in a gate electrode is suppressed near a boundary between an n-channel type MISFET and a p-channel type MISFET, which adopt a polycide's dual-gate structure. Since a gate electrode of an n-channel type MISFET and a gate electrode of a p-channel type MISFET are of mutually different conductivity types, they are separated to prevent the mutual diffusion of the impurities and are electrically connected to each other via a metallic wiring formed in the following steps. In a step before a gate electrode material is patterned to separate the gate electrodes, the mutual diffusion of the impurities before forming the gate electrodes is prevented by performing no heat treatment at a temperature of 700° C. or higher.

公开(公告)号：US06962880B2

公开(公告)日：2005-11-08

申请号：US10774406

申请日：2004-02-10

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/306 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L21/469 ,  H01L21/76 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

摘要翻译： 制造本发明的半导体集成电路器件的方法包括将由氢和氧产生的低浓度水的氧化物质通过催化作用输送到半导体晶片的主表面或其附近，以及 在半导体晶片的主表面上以氧化膜生长速率形成用作MOS晶体管的栅极绝缘膜的厚度为5nm或更小的薄氧化膜，其足以确保形成氧化膜的保真度，以及 氧化膜厚度均匀。

公开(公告)号：US20050208731A1

公开(公告)日：2005-09-22

申请号：US11132306

申请日：2005-05-19

申请人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

发明人： Yoshikazu Tanabe ,  Satoshi Sakai ,  Nobuyoshi Natsuaki

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/306 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L21/469 ,  H01L21/76 ,  H01L21/8238 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L21/31662 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31658 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67213 ,  H01L21/67219 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823857 ,  H01L29/42364 ,  H01L29/518 ,  Y10S148/023 ,  Y10S148/116 ,  Y10S438/935

摘要： A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.

公开(公告)号：US06909133B2

公开(公告)日：2005-06-21

申请号：US10699690

申请日：2003-11-04

申请人： Ryoichi Furukawa ,  Satoshi Sakai ,  Satoshi Yamamoto

发明人： Ryoichi Furukawa ,  Satoshi Sakai ,  Satoshi Yamamoto

IPC分类号： H01L27/092 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/78 ,  H01L29/108

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/28202 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7833

摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.

摘要翻译： 在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中，抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。 构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。 构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。 在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。 因此，基板不会暴露在空气中。 因此，可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。