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35 条记录 (耗时 0.032 秒)

    SELF-ALIGNED CAP AND BARRIER
    22.
    发明申请
    SELF-ALIGNED CAP AND BARRIER 审中-公开
    自对准的帽子和障碍物

    公开(公告)号：US20090321934A1

    公开(公告)日：2009-12-31

    申请号：US12165016

    申请日：2008-06-30

    申请人： Adrien R. Lavoie ,  Florian Gstrein

    发明人： Adrien R. Lavoie ,  Florian Gstrein

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76867 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device comprising an insulator layer formed on a substrate; a via formed by etching into the insulator layer to a first depth; a first metal layer formed over the insulator layer; a second metal layer deposited on the first metal layer to substantially fill the via; a metal-dopant alloy layer deposited over the second metal, wherein the dopant is diffused by annealing through the second metal layer and the first metal layer deposited in the via, such that the dopant migrates to a boundary between the first metal layer and the insulator to form a barrier; and an etch stop layer deposited over the via after planarization of the via and the insulator layer to form a barrier cap.

    摘要翻译： 一种半导体器件，包括形成在衬底上的绝缘体层; 通过将绝缘体层蚀刻到第一深度而形成的通孔; 形成在所述绝缘体层上的第一金属层; 沉积在第一金属层上以基本上填充通孔的第二金属层; 沉积在第二金属上的金属 - 掺杂剂合金层，其中掺杂剂通过退火通过第二金属层和沉积在通孔中的第一金属层而扩散，使得掺杂剂迁移到第一金属层和绝缘体之间的边界 形成屏障; 以及在通孔和绝缘体层平坦化之后在通孔上沉积以形成阻挡盖的蚀刻停止层。

    Method and CMOS-based device to analyze molecules and nanomaterials based on the electrical readout of specific binding events on functionalized electrodes
    23.
    发明申请
    Method and CMOS-based device to analyze molecules and nanomaterials based on the electrical readout of specific binding events on functionalized electrodes 审中-公开
    基于功能化电极上特异性结合事件的电气读出的方法和基于CMOS的器件来分析分子和纳米材料

    公开(公告)号：US20070292855A1

    公开(公告)日：2007-12-20

    申请号：US11207000

    申请日：2005-08-19

    申请人： Valery Dubin ,  Florian Gstrein ,  Jonathan Lueker

    发明人： Valery Dubin ,  Florian Gstrein ,  Jonathan Lueker

    IPC分类号： C12Q1/68 ,  C12M3/00

    CPC分类号： C12Q1/6816 ,  C12Q2565/607

    摘要： A device having a functionalized electrode having a probe molecule, wherein the device has an ability to electrically detect a molecular binding event between the probe molecule and a target molecule by a polarization change of the functionalized electrode is disclosed. The device could also include an unfunctionalized electrode that does not have the probe molecule and the device could have an ability to electrically detect the molecular binding event between the probe molecule and the target molecule by a polarization change between the functionalized electrode and the unfuctionalized electrode.

    摘要翻译： 具有具有探针分子的官能化电极的器件，其中该器件具有通过官能化电极的偏振变化电探测探针分子与靶分子之间的分子结合事件的能力。 该装置还可以包括不具有探针分子的未官能化电极，并且该装置可以具有通过功能化电极和未通电电极之间的偏振变化来电探测分子与靶分子之间的分子结合事件的能力。

    Composite metal films and carbon nanotube fabrication
    24.
    发明申请
    Composite metal films and carbon nanotube fabrication 有权
    复合金属薄膜和碳纳米管制作

    公开(公告)号：US20070196575A1

    公开(公告)日：2007-08-23

    申请号：US11359165

    申请日：2006-02-21

    申请人： Juan Dominguez ,  Valery Dubin ,  Florian Gstrein ,  Michael Goldstein

    发明人： Juan Dominguez ,  Valery Dubin ,  Florian Gstrein ,  Michael Goldstein

    IPC分类号： C23C16/00 ,  C01B31/02

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  Y10S977/742

    摘要： Embodiments of the present invention provide methods for the fabrication of carbon nanotubes using composite metal films. A composite metal film is fabricated to provide uniform catalytic sites to facilitate the uniform growth of carbon nanotubes. Further embodiments provide embedded nanoparticles for carbon nanotube fabrication. Embodiments of the invention are capable of maintaining the integrity of the catalytic sites at temperatures used in carbon nanotube fabrication processes, 600 to 1100° C.

    摘要翻译： 本发明的实施例提供了使用复合金属膜制造碳纳米管的方法。 制造复合金属膜以提供均匀的催化位点以促进碳纳米管的均匀生长。 另外的实施方案提供用于碳纳米管制造的嵌入式纳米颗粒。 本发明的实施方案能够在碳纳米管制造工艺中使用的温度下维持催化部位的完整性，其温度为600至1100℃

    BARRIERLESS SINGLE-PHASE INTERCONNECT
    29.
    发明申请
    BARRIERLESS SINGLE-PHASE INTERCONNECT 审中-公开
    无障碍单相互连

    公开(公告)号：US20120153483A1

    公开(公告)日：2012-06-21

    申请号：US12973281

    申请日：2010-12-20

    申请人： Rohan N. Akolkar ,  Florian Gstrein ,  Daniel J. Zierath

    发明人： Rohan N. Akolkar ,  Florian Gstrein ,  Daniel J. Zierath

    IPC分类号： H01L23/52 ,  H01L21/768

    CPC分类号： H01L23/53261 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53247 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming an interconnect structure and an integrated circuit including the interconnect structure. The method includes: depositing a dielectric layer over a conductive layer; forming an opening in the dielectric layer to expose the conductive layer; forming a barrierless single-phase interconnect comprising a metal or compound having a melting point between a melting point of copper and a melting point of tungsten. Forming includes depositing a layer of metal or compound within the opening and on an upper surface of the dielectric layer Preferably, the barrierless single-phase interconnect comprises cobalt or a cobalt containing compound. Thus, an interconnect structure, including a via and associated line, is made up of a single-phase metal or compound without the use of a different material between the interconnect and the underlying dielectric, thus improving electrical performance and reliability and further simplifying the interconnect formation process.

    摘要翻译： 形成互连结构的方法和包括所述互连结构的集成电路。 该方法包括：在导电层上沉积介电层; 在所述电介质层中形成开口以暴露所述导电层; 形成包含熔点在铜的熔点和钨的熔点之间的金属或化合物的无障碍单相互连。 形成包括在开口内和介电层的上表面上沉积一层金属或化合物。优选地，无障碍单相互连包括钴或含钴化合物。 因此，包括通孔和相关线路的互连结构由单相金属或化合物构成，而不需要在互连和下面的电介质之间使用不同的材料，从而改善电性能和可靠性并进一步简化互连 形成过程。

    Composite metal films and carbon nanotube fabrication
    30.
    发明授权
    Composite metal films and carbon nanotube fabrication 有权
    复合金属薄膜和碳纳米管制作

    公开(公告)号：US07635503B2

    公开(公告)日：2009-12-22

    申请号：US11359165

    申请日：2006-02-21

    申请人： Juan E. Dominguez ,  Valery M. Dubin ,  Florian Gstrein ,  Michael Goldstein

    发明人： Juan E. Dominguez ,  Valery M. Dubin ,  Florian Gstrein ,  Michael Goldstein

    IPC分类号： C23C16/00

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  Y10S977/742

    摘要： Embodiments of the present invention provide methods for the fabrication of carbon nanotubes using composite metal films. A composite metal film is fabricated to provide uniform catalytic sites to facilitate the uniform growth of carbon nanotubes. Further embodiments provide embedded nanoparticles for carbon nanotube fabrication. Embodiments of the invention are capable of maintaining the integrity of the catalytic sites at temperatures used in carbon nanotube fabrication processes, 600 to 1100° C.

    摘要翻译： 本发明的实施例提供了使用复合金属膜制造碳纳米管的方法。 制造复合金属膜以提供均匀的催化位点以促进碳纳米管的均匀生长。 另外的实施方案提供用于碳纳米管制造的嵌入式纳米颗粒。 本发明的实施方案能够在碳纳米管制造工艺中使用的温度下维持催化部位的完整性，其温度为600至1100℃