公开(公告)号：US20120299015A1

公开(公告)日：2012-11-29

申请号：US13405985

申请日：2012-02-27

申请人： Koichi TACHIBANA ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/20 ,  H01L29/04

CPC分类号： H01L33/20 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。

公开(公告)号：US20120132943A1

公开(公告)日：2012-05-31

申请号：US13204013

申请日：2011-08-05

申请人： Toshiki HIKOSAKA ,  Hajime Nago ,  Koichi Tachibana ,  Toshihide Ito ,  Shinya Nunoue

发明人： Toshiki HIKOSAKA ,  Hajime Nago ,  Koichi Tachibana ,  Toshihide Ito ,  Shinya Nunoue

IPC分类号： H01L33/58

CPC分类号： H01L33/22 ,  H01L33/325 ,  H01L33/40

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×107/cm2 or more and 2×108/cm2 or less.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，电极，p型半导体层和发光层。 p型半导体层设置在n型半导体层和电极之间，并且包括与电极接触的p侧接触层。 发光层设置在n型和p型半导体层之间。 p侧接触层包括具有垂直于从n型半导体层朝向p型半导体层的第一方向的平面的平坦部分和从平坦部分向电极突出的多个突出部分。 沿着第一方向的多个突出部分的高度小于从发光层发射的光的主波长的四分之一。 平面内的多个突出部的密度为5×10 7 / cm 2以上2×10 8 / cm 2以下。

公开(公告)号：US20120056157A1

公开(公告)日：2012-03-08

申请号：US13222500

申请日：2011-08-31

申请人： Toshiki Hikosaka ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3407 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.

摘要翻译： 根据一个实施例，半导体发光器件包括n型层，p型层和设置在n型层和p型层之间并包括势垒层和阱层的发光单元。 阻挡层中的至少一个包括第一和第二部分层。 第一部分层设置在n型层的一侧。 第二部分层设置在p型层的一侧，并且包含浓度高于第一部分层中的n型杂质。 阱层中的至少一个包括第三和第四部分层。 第三部分层设置在n型层的一侧。 第四部分层设置在p型层的一侧，并且包含浓度高于第三部分层的n型杂质。

公开(公告)号：US08643044B2

公开(公告)日：2014-02-04

申请号：US13222912

申请日：2011-08-31

申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

公开(公告)号：US20120286284A1

公开(公告)日：2012-11-15

申请号：US13206700

申请日：2011-08-10

申请人： Koichi TACHIBANA ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Shigeya Kimura ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01S5/3407 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.

摘要翻译： 根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。 基础层包括氮化物半导体。 基础层的位错密度不大于5×108cm-2。 第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。 发光部分设置在第一半导体层上。 发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。 阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。 具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

公开(公告)号：US20120061713A1

公开(公告)日：2012-03-15

申请号：US13222912

申请日：2011-08-31

申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/42

CPC分类号： H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

公开(公告)号：US09048362B2

公开(公告)日：2015-06-02

申请号：US13405565

申请日：2012-02-27

申请人： Shigeya Kimura ,  Yoshiyuki Harada ,  Hajime Nago ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Shigeya Kimura ,  Yoshiyuki Harada ,  Hajime Nago ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  B82Y20/00 ,  H01S5/343 ,  H01S5/34

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3408 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

摘要翻译： 根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。 发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。 阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分 一部分。 阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分 一部分。

公开(公告)号：US08895956B2

公开(公告)日：2014-11-25

申请号：US13218827

申请日：2011-08-26

申请人： Shigeya Kimura ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Shigeya Kimura ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/04 ,  H01L33/32 ,  H01L33/06

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.

摘要翻译： 根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。 发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。 阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。 阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。 在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

公开(公告)号：US20120286237A1

公开(公告)日：2012-11-15

申请号：US13222185

申请日：2011-08-31

申请人： Hajime Nago ,  Koichi Tachibana ,  Shigeya Kimura ,  Takahiro Sato ,  Taisuke Sato ,  Toshihide Ito ,  Shinya Nunoue

发明人： Hajime Nago ,  Koichi Tachibana ,  Shigeya Kimura ,  Takahiro Sato ,  Taisuke Sato ,  Toshihide Ito ,  Shinya Nunoue

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/325 ,  H01S5/34333 ,  H01S2304/04

摘要： According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including Inx1Ga1-x1N (0

摘要翻译： 根据一个实施例，半导体发光器件包括：n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间。 发光部分包括：包括In x Ga 1-x1 N（0

公开(公告)号：US20120049157A1

公开(公告)日：2012-03-01

申请号：US13221456

申请日：2011-08-30

申请人： Hajime NAGO ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Hajime NAGO ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L33/30

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06

摘要： According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.

摘要翻译： 根据一个实施例，在氮化物半导体发光器件中，第一覆盖层包括n型氮化物半导体。 在第一包层上形成有源层，并且包括含In氮化物半导体。 在有源层上形成GaN层。 第一AlGaN层形成在GaN层上，并具有第一Al组成比。 在第一AlGaN层上形成p型第二AlGaN层，具有高于第一Al组分比的第二Al组分比，并且含有比GaN层和第一AlGaN层更大量的Mg。 第二覆盖层形成在第二AlGaN层上，并且包括p型氮化物半导体。