公开(公告)号：US20100035440A1

公开(公告)日：2010-02-11

申请号：US12536061

申请日：2009-08-05

申请人： Masanao Fukuda ,  Takafumi Sasaki ,  Kazuhiro Yuasa

发明人： Masanao Fukuda ,  Takafumi Sasaki ,  Kazuhiro Yuasa

IPC分类号： H01L21/465

CPC分类号： H01L21/02238 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45519 ,  C23C16/45546 ,  C23C16/45548 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/52 ,  H01L21/02255 ,  H01L21/31662

摘要： A substrate processing apparatus includes: a reaction tube configured to process a plurality of substrates; a heater configured to heat the inside of the reaction tube; a holder configured to arrange and hold the plurality of substrates within the reaction tube; a first nozzle disposed in an area corresponding to a substrate arrangement area where the plurality of substrates are arranged, and configured to supply hydrogen-containing gas from a plurality of locations of the area into the reaction tube; a second nozzle disposed in the area corresponding to the substrate arrangement area, and configured to supply oxygen-containing gas from a plurality of locations of the area into the reaction tube; an exhaust outlet configured to exhaust the inside of the reaction tube; and a pressure controller configured to control pressure inside the reaction tube to be lower than atmospheric pressure, wherein the first nozzle is provided with a plurality of first gas ejection holes, and the second nozzle is provided with as many second gas ejection holes as at least the plurality of substrates so that the second gas ejection holes correspond to at least the respective substrates.

摘要翻译： 一种基板处理装置，包括：反应管，被配置为处理多个基板; 加热器，其构造成加热反应管的内部; 保持器，其构造成在所述反应管内布置和保持所述多个基板; 第一喷嘴，其设置在与配置有多个基板的基板配置区域对应的区域中，并且构造成将来自该区域的多个位置的含氢气体供给到反应管中; 第二喷嘴，其设置在与所述基板配置区域对应的区域中，并且被配置为将所述区域的多个位置的含氧气体供应到所述反应管中; 排气口，其构造成排出反应管的内部; 以及压力控制器，被配置为将所述反应管内的压力控制为低于大气压力，其中所述第一喷嘴设置有多个第一气体喷射孔，并且所述第二喷嘴设置有至少至少两个第二气体喷射孔 所述多个基板使得所述第二气体喷射孔至少对应于各个基板。

公开(公告)号：US10464241B2

公开(公告)日：2019-11-05

申请号：US14968967

申请日：2015-12-15

申请人： Takafumi Sasaki ,  Takeo Yamaguchi

发明人： Takafumi Sasaki ,  Takeo Yamaguchi

IPC分类号： B29C64/165 ,  B29C45/00 ,  B33Y10/00 ,  B33Y40/00 ,  B33Y30/00 ,  B29L9/00 ,  B22F3/00

摘要： A stereoscopic modeling apparatus including a modeling part, a modeling unit, and a controller is provided. The modeling part forms a powder layer with a powder. The modeling unit discharges droplets of a modeling liquid on the powder layer to form a modeling layer in which particles of the powder are bonded. The controller causes the modeling part and the modeling unit to repeat forming the powder layer and the modeling layer, respectively, to sequentially laminate the modeling layer to form a stereoscopic modeled product. The droplets include a preceding droplet and a succeeding droplet sequentially discharged to adjacent positions on the powder layer, and the succeeding droplet is discharged after the preceding droplet is discharged and within a time period in which a contact angle between the preceding droplet impacted on the powder layer and the powder in the powder layer remains greater than 90 degrees.

公开(公告)号：US20160243765A1

公开(公告)日：2016-08-25

申请号：US14995258

申请日：2016-01-14

申请人： Takafumi Sasaki ,  Takeo Yamaguchi

发明人： Takafumi Sasaki ,  Takeo Yamaguchi

IPC分类号： B29C67/00 ,  B22F3/00

CPC分类号： B29C67/0081 ,  B22F3/008 ,  B22F2999/00 ,  B29C64/165 ,  B29K2105/251 ,  B33Y10/00 ,  B33Y30/00 ,  B22F3/003

摘要： A stereoscopic modeling apparatus is provided. The stereoscopic modeling apparatus includes a modeling tank, a liquid discharger, and a powder supplier. In the modeling tank, a powder layer including a powder is formed and a modeling layer in which the powder in the powder layer is bonded into a required shape is laminated. The liquid discharger discharges a modeling liquid to the powder in the modeling tank. The powder supplier supplies the powder to the modeling tank. The powder supplier supplies the powder to the powder layer while at least a part of the modeling liquid discharged from the liquid discharger and adhered to a surface of the powder layer remains existing on an outermost surface of the powder layer.

摘要翻译： 提供立体建模装置。 立体建模装置包括建模箱，液体排出器和粉末供应器。 在造型罐中，形成包含粉末的粉末层，并且层压将粉末层中的粉末粘结成所需形状的造型层。 液体排出器将建模液体排放到造型罐中的粉末上。 粉末供应商将粉末供应给建模罐。 粉末供应商将粉末供应到粉末层，而从液体排出器排出并粘附到粉末层的表面的造型液体的至少一部分保留在粉末层的最外表面上。

公开(公告)号：US09096061B2

公开(公告)日：2015-08-04

申请号：US14468599

申请日：2014-08-26

申请人： Takafumi Sasaki

发明人： Takafumi Sasaki

IPC分类号： B41J2/045 ,  B41J2/14 ,  B41J2/18

CPC分类号： B41J2/14233 ,  B41J2/14201 ,  B41J2/14274 ,  B41J2/18 ,  B41J2202/12

摘要： A droplet discharge head includes a plurality of pressure chambers which communicate with a plurality of nozzles which discharge droplets, respectively; at least one common supply passage which supplies liquid to the pressure chambers; at least one common return passage which communicates with the pressure chambers and to which a part of the liquid in the pressure chambers is returned; and a plurality of energy-generating elements which generate pressure in the pressure chambers, wherein the droplet discharge head circulates liquid supplied from the common supply passage to the pressure chambers to the common return passage and discharges droplets from the nozzles when pressure is generated in the pressure chambers by the energy-generating elements, and the common supply passage and the common return passage are arranged on the same side with respect to the pressure chambers.

摘要翻译： 液滴喷射头包括分别与多个排出液滴的喷嘴连通的多个压力室; 至少一个向压力室供应液体的公共供应通道; 至少一个公共返回通道，其与压力室连通并且压力室中的一部分液体返回到该通道; 以及多个在压力室中产生压力的能量产生元件，其中，液滴喷射头将从公共供应通道供应的液体循环到压力室到共用返回通道，并且在压力产生压力时从喷嘴排出液滴 能量产生元件的压力室和公共供给通道和公共返回通道相对于压力室布置在同一侧。

公开(公告)号：US09022521B2

公开(公告)日：2015-05-05

申请号：US14010806

申请日：2013-08-27

申请人： Takafumi Sasaki ,  Yukitoshi Tajima

发明人： Takafumi Sasaki ,  Yukitoshi Tajima

IPC分类号： B41J2/015 ,  B41J2/14 ,  B41J2/16

CPC分类号： B41J2/1433 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2002/14362 ,  B41J2202/11

摘要： Disclosed is a droplet discharge head including a nozzle substrate including a nozzle, an individual liquid chamber substrate including an individual liquid chamber, and a common liquid chamber substrate including a common liquid chamber, wherein the substrates are laminated, wherein a portion of a top surface of the common liquid chamber is flexible, wherein the top surface of the common liquid chamber is disposed at a side opposite to another side at which the nozzle plate is disposed, wherein the common liquid chamber has a shape such that one portion of the common liquid chamber is narrowed in a direction in which the substrates are laminated, wherein a height of a wall of the common liquid chamber in the direction in which the substrates are laminated is constant, and wherein the wall is substantially perpendicular to the top surface.

摘要翻译： 公开了一种液滴喷射头，其包括喷嘴基板，喷嘴基板包括喷嘴，包括单独液体室的单独液体室基板和包括公共液体室的公共液体室基板，其中基板被层压，其中顶部表面的一部分 所述公共液体室是柔性的，其中所述公共液体室的顶表面设置在与设置所述喷嘴板的另一侧相对的一侧，其中所述公共液体室具有使得所述公共液体的一部分 室在层叠基板的方向上变窄，其中，在层叠基板的方向上的公共液体室的壁的高度是恒定的，并且其中壁基本上垂直于顶表面。

公开(公告)号：US08901013B2

公开(公告)日：2014-12-02

申请号：US13813493

申请日：2011-08-02

申请人： Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

发明人： Kazuhiro Yuasa ,  Masanao Fukuda ,  Takafumi Sasaki ,  Yasuhiro Megawa ,  Masayoshi Minami

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC分类号： H01L21/02104 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/3105 ,  H01L21/67017

摘要： An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

摘要翻译： 将含氧气体和含氢气体供给到加热至第二温度并且压力设定为小于大气压的预反应室中，并且在预反应室内的两种气体之间产生反应 产生反应性物质，并且将反应性物质供应到处理室中并从其中排出，其中容纳加热到第一温度的基底并将压力设定为小于大气压，并且通过 此时的第二温度设定为不小于第一温度的反应物种。

公开(公告)号：US08651628B2

公开(公告)日：2014-02-18

申请号：US13736221

申请日：2013-01-08

申请人： Takafumi Sasaki

发明人： Takafumi Sasaki

IPC分类号： B41J2/045

CPC分类号： B41J2/14 ,  B41J2/14233 ,  B41J2002/14362 ,  B41J2002/14419

摘要： A liquid droplet ejecting head is disclosed which includes at least one or more nozzles which eject liquid droplets; one or more dedicated liquid chambers which are communicatively connected to the nozzle; a common liquid chamber which is communicatively connected to the dedicated liquid chamber; and an energy generating unit which generates energy provided to the dedicated liquid chamber, wherein at least one wall face of the common liquid chamber includes a flexible wall, which has flexibility; a buffer chamber is included in an opposing area via the flexible wall and the common liquid chamber; and wherein the buffer chamber is communicatively connected to an external space in an area not opposing the common liquid chamber.

摘要翻译： 公开了一种液滴喷射头，其包括喷射液滴的至少一个或多个喷嘴; 一个或多个专门的液体室，其连通地连接到喷嘴; 与专用液体室连通地连接的公共液体室; 以及能量产生单元，其产生提供给所述专用液体室的能量，其中所述公共液体室的至少一个壁面包括具有柔性的柔性壁; 缓冲室经由柔性壁和公共液体室被包括在相对的区域中; 并且其中所述缓冲室通信地连接到不与所述公共液体室相对的区域中的外部空间。

公开(公告)号：US08255078B2

公开(公告)日：2012-08-28

申请号：US13038600

申请日：2011-03-02

申请人： Toshiaki Otsuki ,  Soichiro Ide ,  Osamu Hanaoka ,  Takafumi Sasaki

发明人： Toshiaki Otsuki ,  Soichiro Ide ,  Osamu Hanaoka ,  Takafumi Sasaki

IPC分类号： G05B19/19

CPC分类号： G05B19/4103 ,  G05B2219/49286

摘要： A numerical controller for controlling a multi-axis machine tool having three linear axes and three rotating axes obtains an interpolated tool direction vector by interpolating a tool direction command and computes multiple solutions for three rotating axes from the vector. The three rotating axis positions are computed by synthesizing these multiple solutions. The three linear axis positions on a machine coordinate system are computed by adding to the interpolated tool center point position the product of the interpolated tool direction vector, or a verified tool direction vector based on the three rotating axis positions determined by the rotating axis position computing means, and a tool length compensation amount. The three rotating axes are moved to the positions computed above and the three linear axes are moved to the positions computed above.

摘要翻译： 用于控制具有三个直线轴和三个旋转轴的多轴机床的数值控制器通过内插刀具方向指令获得内插的刀具方向矢量，并且从向量计算三个旋转轴的多个解。 通过合成这些多个解来计算三个旋转轴位置。 通过将内插刀具方向矢量的乘积或基于由旋转轴位置计算确定的三个旋转轴位置的经验证的刀具方向矢量相加，插入到刀具中心点位置来计算机床坐标系上的三个直线轴位置 装置和刀具长度补偿量。 三个旋转轴被移动到上面计算的位置，并且三个线性轴被移动到上面计算的位置。

公开(公告)号：US20120187890A1

公开(公告)日：2012-07-26

申请号：US13243466

申请日：2011-09-23

申请人： Toshiaki OTSUKI ,  Soichiro Ide ,  Osamu Hanaoka ,  Takafumi Sasaki

发明人： Toshiaki OTSUKI ,  Soichiro Ide ,  Osamu Hanaoka ,  Takafumi Sasaki

IPC分类号： G05B19/25

CPC分类号： G05B19/4086

摘要： A numerical controller controls a three-axis machine tool that machines a workpiece, mounted on a table, with at least three linear axes. The numerical controller includes a workpiece mounting error compensation unit that compensates a mounting error caused when the workpiece is mounted. The workpiece mounting error compensation unit performs an error compensation with respect to an instructed linear-axis position with amounting error which is set beforehand, in order to keep a position with respect to the workpiece at a tool center point position, based on the instructed linear-axis position of the three linear axes to obtain a compensated linear-axis position. The three linear axes are driven based on the obtained compensated linear-axis position.

摘要翻译： 一个数字控制器控制一个三轴机床，用于安装在工作台上的工件至少具有三个直线轴。 数值控制器包括工件安装误差补偿单元，用于补偿安装工件时引起的安装误差。 工件安装误差补偿单元相对于预先设定的量误差的指示的线性轴位置执行误差补偿，以便基于所指示的线性来保持相对于工件在刀具中心点位置的位置 三轴线的轴位置，以获得补偿的直线轴位置。 基于获得的补偿线性轴位置驱动三个直线轴。

公开(公告)号：US20110212599A1

公开(公告)日：2011-09-01

申请号：US13036330

申请日：2011-02-28

申请人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

发明人： Koei Kuribayashi ,  Yoshinori Imai ,  Sadao Nakashima ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  C23C16/455 ,  C23C16/458 ,  H01L21/00

CPC分类号： H01L21/0262 ,  C23C16/325 ,  C23C16/45578 ,  H01L21/02529 ,  H01L21/67109

摘要： Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, and including at least one second gas supply port; wherein the first gas supply port and the second gas supply port are installed adjacent to each other in a direction that the plurality of substrates are stacked, the method including the steps of: loading the plurality of substrates into the reaction chamber; and forming SiC films by supplying at least a silicon-containing gas and a chlorine-containing gas or a silicon/chlorine-containing gas through the first gas supply port and supplying at least a carbon-containing gas and a reduction gas through the second gas supply port.

摘要翻译： 提供一种使用基板处理设备制造半导体器件的方法，该基板处理设备包括其中多个基板以预定距离堆叠的反应室; 第一气体供给喷嘴，其安装成延伸到所述多个基板堆叠的区域; 第二气体供给喷嘴，其安装成在与堆叠所述多个基板的区域中延伸到与所述第一气体供给喷嘴的位置不同的位置; 第一分支喷嘴，其安装在所述第一气体供给喷嘴的平行于所述多个基板的主表面的方向上，所述第一分支喷嘴的至少一条线沿所述第二气体供给喷嘴的方向分支，并且包括至少一个第一气体供应 港口; 以及第二分支喷嘴，其在与所述多个基板的主表面平行的方向上安装在所述第二气体供给喷嘴处，所述第二分支喷嘴的至少一条线沿所述第一气体供给喷嘴的方向分支，并且包括至少一个第二喷嘴 供气口; 其特征在于，所述第一气体供给口和所述第二气体供给口沿所述多个基板层叠的方向彼此相邻地安装，所述方法包括以下步骤：将所述多个基板装载到所述反应室中; 以及通过经由所述第一气体供给口至少供给含硅气体和含氯气体或含硅/氯气体而形成SiC膜，并且通过所述第二气体供给至少含碳气体和还原气体 供应口。