Implementation of ultrahigh frequency emitters and applications to radar and telecommunications
    21.
    发明授权
    Implementation of ultrahigh frequency emitters and applications to radar and telecommunications 失效
    实现超高频发射器和应用于雷达和电信

    公开(公告)号:US06788718B1

    公开(公告)日:2004-09-07

    申请号:US09530316

    申请日:2000-04-27

    Abstract: The invention concerns an ultrahigh frequency emitting device, having: at least a first and a second microlaser (22, 24), emitting at two different frequencies &ohgr;1 and &ohgr;2, means of slaving the first and the second microlaser frequency-wise, an array of N elements (N≧2) (52, 54, 56, 58) placed on the path of the beam of the second laser, each element making it possible to impose a phase delay on the beam which passes through it, N means (26, 28, 30, 32) for mixing the beam emitted by the first laser and each of the N delayed beams, and for producing N signals of frequency &ohgr;1-&ohgr;2, N antenna-forming means (34, 36, 38, 40) for emitting radiation at the frequency &ohgr;1-&ohgr;2.

    Abstract translation: 本发明涉及一种超高频发射装置,其具有:至少第一和第二微激光器(22,24),以两个不同的频率ω1和ω2发射,使第一和第二微激光器以频率方式使第一和第二微激光器成为一个阵列 放置在第二激光束的光束路径上的N个元件(N> = 2)(52,54,56,58),每个元件使得可以在通过它的光束上施加相位延迟,N表示( 26,28,30,32),用于混合由第一激光器发射的光束和N个延迟光束中的每一个,并且用于产生频率ω1-ω2,N个天线形成装置(34,36,38,40)的N个信号, 用于发射频率ω1-ω2的辐射。

    Microlaser cavity, a solid state pulsed microlaser with active
Q-switching by a micromodulator and method forming same
    24.
    发明授权
    Microlaser cavity, a solid state pulsed microlaser with active Q-switching by a micromodulator and method forming same 失效
    微激光腔,具有通过微调制器进行有源Q开关的固态脉冲微激光器及其形成方法

    公开(公告)号:US5703890A

    公开(公告)日:1997-12-30

    申请号:US663664

    申请日:1996-06-14

    CPC classification number: H01S3/0627 H01S3/121 H01S3/0602 H01S3/0615

    Abstract: The invention relates to a microlaser cavity, with active Q switching, characterized in that it comprises: an active laser medium (20), an input mirror (22) and an output mirror (24, 87) defining the cavity, a micromodulator with frustrated total internal reflection, comprising two microprisms (32, 34) made of a certain material of index n.sub.1 each having at least one planar face (36, 38), the two planar faces being approximately parallel to each other and inclined on the microlaser cavity axis, thereby defining a plate (30) of a certain material of index n.sub.2 less than n.sub.1. means (44, 46, 48, 50, 52, 54) for varying the thickness of the plate.

    Abstract translation: 本发明涉及一种具有有源Q切换的微激光器腔体,其特征在于,它包括:激活激光介质(20),输入反射镜(22)和限定空腔的输出反射镜(24,87),具有沮丧的微调制器 全内反射,包括由具有至少一个平面(36,38)的折射率n1的某种材料制成的两个微棱镜(32,34),所述两个平面相互大致平行并且在微激光器腔轴上倾斜 ,从而限定一个小于n1的索引n2的某种材料的板(30)。 用于改变板厚度的装置(44,46,48,50,52,54)。

    Compact electronic pumping-type semiconductor laser
    25.
    发明授权
    Compact electronic pumping-type semiconductor laser 失效
    紧凑型电子泵浦型半导体激光器

    公开(公告)号:US5125000A

    公开(公告)日:1992-06-23

    申请号:US680322

    申请日:1991-04-04

    Abstract: A laser having a volume of less than 1 cubic centimeter comprises a semiconductor constructed to permit the emission of a coherent beam of electromagnetic radiation upon the application of an electron beam to one of its surfaces, and an electron bombardment pumping device for applying the electron beam. The electron bombardment device includes at least one microdot emissive cathode cold electron source having a volume less than 1 cm.sup.3. In a preferred embodiment the laser comprises a plurality of electron bombardment devices formed into a matrix or row of microdot cathodes. A focusing device is provided for focusing the electron beams onto a plurality of excitement strips corresponding to a plurality of semiconductors.

    Abstract translation: 具有小于1立方厘米的体积的激光器包括半导体,被构造成允许在将电子束施加到其表面之一时发射电磁辐射的相干光束;以及电子轰击泵送装置,用于施加电子束 。 电子轰击装置包括至少一个体积小于1cm 3的微点发射阴极冷电子源。 在优选实施例中,激光器包括形成为矩阵或行的微点阴极的多个电子轰击装置。 提供聚焦装置用于将电子束聚焦到对应于多个半导体的多个兴奋条上。

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