Abstract:
The invention concerns an ultrahigh frequency emitting device, having: at least a first and a second microlaser (22, 24), emitting at two different frequencies &ohgr;1 and &ohgr;2, means of slaving the first and the second microlaser frequency-wise, an array of N elements (N≧2) (52, 54, 56, 58) placed on the path of the beam of the second laser, each element making it possible to impose a phase delay on the beam which passes through it, N means (26, 28, 30, 32) for mixing the beam emitted by the first laser and each of the N delayed beams, and for producing N signals of frequency &ohgr;1-&ohgr;2, N antenna-forming means (34, 36, 38, 40) for emitting radiation at the frequency &ohgr;1-&ohgr;2.
Abstract:
The invention relates to a device for an infrared light emitter comprising a semiconductor element (12) able to emit infrared radiation and a switched microlaser (2, 4, 6, 8) arranged so as to be able to optically pump the semiconductor element.
Abstract:
The invention relates to a microlaser cavity switched with the aid of an electrooptical material (54). Electrodes (84, 86) are produced on support elements (80, 82) and the latter are then applied on either side of the electrooptical element. Solid electrodes can also be applied on either side of the electrooptical material.
Abstract:
The invention relates to a microlaser cavity, with active Q switching, characterized in that it comprises: an active laser medium (20), an input mirror (22) and an output mirror (24, 87) defining the cavity, a micromodulator with frustrated total internal reflection, comprising two microprisms (32, 34) made of a certain material of index n.sub.1 each having at least one planar face (36, 38), the two planar faces being approximately parallel to each other and inclined on the microlaser cavity axis, thereby defining a plate (30) of a certain material of index n.sub.2 less than n.sub.1. means (44, 46, 48, 50, 52, 54) for varying the thickness of the plate.
Abstract:
A laser having a volume of less than 1 cubic centimeter comprises a semiconductor constructed to permit the emission of a coherent beam of electromagnetic radiation upon the application of an electron beam to one of its surfaces, and an electron bombardment pumping device for applying the electron beam. The electron bombardment device includes at least one microdot emissive cathode cold electron source having a volume less than 1 cm.sup.3. In a preferred embodiment the laser comprises a plurality of electron bombardment devices formed into a matrix or row of microdot cathodes. A focusing device is provided for focusing the electron beams onto a plurality of excitement strips corresponding to a plurality of semiconductors.