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1.发明授权Microlaser cavity, a solid state pulsed microlaser with active Q-switching by a micromodulator and method forming same 失效微激光腔，具有通过微调制器进行有源Q开关的固态脉冲微激光器及其形成方法
公开(公告)号：US5703890A
公开(公告)日：1997-12-30
申请号：US663664
申请日：1996-06-14
申请人： Philippe Thony , Marc Rabarot , Engin Molva
发明人： Philippe Thony , Marc Rabarot , Engin Molva
CPC分类号： H01S3/0627 , H01S3/121 , H01S3/0602 , H01S3/0615
摘要： The invention relates to a microlaser cavity, with active Q switching, characterized in that it comprises: an active laser medium (20), an input mirror (22) and an output mirror (24, 87) defining the cavity, a micromodulator with frustrated total internal reflection, comprising two microprisms (32, 34) made of a certain material of index n.sub.1 each having at least one planar face (36, 38), the two planar faces being approximately parallel to each other and inclined on the microlaser cavity axis, thereby defining a plate (30) of a certain material of index n.sub.2 less than n.sub.1. means (44, 46, 48, 50, 52, 54) for varying the thickness of the plate.
摘要翻译： 本发明涉及一种具有有源Q切换的微激光器腔体，其特征在于，它包括：激活激光介质（20），输入反射镜（22）和限定空腔的输出反射镜（24,87），具有沮丧的微调制器 全内反射，包括由具有至少一个平面（36,38）的折射率n1的某种材料制成的两个微棱镜（32,34），所述两个平面相互大致平行并且在微激光器腔轴上倾斜 ，从而限定一个小于n1的索引n2的某种材料的板（30）。 用于改变板厚度的装置（44,46,48,50,52,54）。
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2.发明授权Microoptical components and optomechanical microdeflectors with microlens displacement 失效微透镜组件和微机械微型偏转器与微透镜位移
公开(公告)号：US5734490A
公开(公告)日：1998-03-31
申请号：US636961
申请日：1996-04-24
申请人： Marc Rabarot , Engin Molva , Eric Ollier
发明人： Marc Rabarot , Engin Molva , Eric Ollier
CPC分类号： G02B26/0875
摘要： A microoptical component including a microlens having a focal axis and a microbeam to which said microlens, is integrally fixed said microbeam extending along an axis substantially perpendicular to the focal axis of the microlens and undergoing elastic deformations along an axis substantially perpendicular to the focal axis of the microlens and to the axis along which the microbeam extends.
摘要翻译： 微光学部件包括具有焦轴和微束的微透镜，所述微透镜与所述微透镜一体地固定，所述微束沿着基本上垂直于微透镜的焦点轴线的轴延伸并且沿着基本上垂直于微透镜的焦点轴线的轴线进行弹性变形 微透镜和微束延伸的轴线。
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3.发明授权Microlaser cavity and externally controlled, passive switching, solid pulsed microlaser 失效微激光腔和外部控制，无源开关，固体脉冲微激光器
公开(公告)号：US5844932A
公开(公告)日：1998-12-01
申请号：US633361
申请日：1996-04-17
申请人： Philippe Thony , Marc Rabarot
发明人： Philippe Thony , Marc Rabarot
CPC分类号： H01S3/0627 , H01S3/113 , H01S3/0602 , H01S3/0615 , H01S3/08063 , H01S3/08068 , H01S3/10092 , H01S3/1061
摘要： Microlaser cavity and externally controlled, passive switching, pulses solid microlaser including a saturable absorber 46 and a device (60, 62) for introducing a beam 56 into the microlaser cavity initiating or starting saturation of the saturable absorber.
摘要翻译： 微激光器腔和外部控制的被动切换，包括可饱和吸收器46的脉冲固体微激光器和用于将光束56引入微激光器腔的器件（60,62），引发或开始饱和吸收体的饱和。
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4.发明授权Process and apparatus for the formation of patterns in a photoresist by continuous laser irradiation, application to the production of microtips emissive cathode electron sources and flat display screens 失效用于通过连续激光照射在光致抗蚀剂中形成图案的方法和装置，应用于生产微尖端发射阴极电子源和平面显示屏
公开(公告)号：US6030266A
公开(公告)日：2000-02-29
申请号：US899169
申请日：1997-07-23
申请人： Michel Ida , Marc Rabarot
发明人： Michel Ida , Marc Rabarot
IPC分类号： G03F7/20 , H01J9/02 , H01J31/12 , H01L21/027 , H01J9/00
CPC分类号： G03F7/70075 , G03F7/2022 , G03F7/2053 , G03F7/70383 , H01J9/025 , H01J2329/00
摘要： Process and apparatus for the formation of patterns in a photosensitive resin layer or photoresist by continuous laser irradiation, application to the production of microtip emissive cathode electron sources and flat display screens. Formation takes place of non-mutually interfering elementary light beams (41), there is at least one relative translation at constant light power and speed of said beams with respect to the layer in order to irradiate lines thereof, each line receiving a light dose lower than that necessary for the development of the resin, a relative rotation of all the beams with respect to the layer takes place, the translation is recommenced in order to irradiate other lines, each line receiving a light dose complimentary to the preceding dose and the resin is developed.
摘要翻译： 用于通过连续激光照射在感光性树脂层或光致抗蚀剂中形成图案的方法和装置，应用于生产微尖端发射阴极电子源和平面显示屏。 形成发生在非相互干扰的基本光束（41）上，所述光束相对于该层的恒定光功率和速度存在至少一个相对平移，以便照射它们的线，每条线接收较低的光剂量 比开发树脂所需的那样，发生所有光束相对于层的相对旋转，重新开始平移以便照射其它线，每条线接收与前一剂量互补的光剂量，并且树脂 是开发的
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5.发明申请EPITAXIAL METHODS FOR REDUCING SURFACE DISLOCATION DENSITY IN SEMICONDUCTOR MATERIALS 审中-公开用于减少半导体材料中表面偏心密度的外延方法公开(公告)号：US20120187541A1
公开(公告)日：2012-07-26
申请号：US13440749
申请日：2012-04-05
申请人： Chantal Arena , Laurent Clavelier , Marc Rabarot
发明人： Chantal Arena , Laurent Clavelier , Marc Rabarot
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639
摘要： The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a plurality of dislocation pit plugs to prevent propagation of dislocations from an underlying layer of material into a following semiconductor layer of material.
摘要翻译： 本发明提供了用于减少半导体层的表面位错的方法和结构，并且可以在半导体结构和包含III族氮化物材料的层的外延生长期间使用。 实施例涉及形成多个位错坑塞，以防止位错从材料的下层扩散到随后的材料半导体层中。
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6.发明授权Assembly procedure for two structures and apparatus produced by the procedure applications to microlasers 失效通过程序应用程序生成的两种结构和装置的微型安装程序
公开(公告)号：US5981360A
公开(公告)日：1999-11-09
申请号：US893314
申请日：1997-07-16
申请人： Marc Rabarot , Laurent Fulbert
发明人： Marc Rabarot , Laurent Fulbert
IPC分类号： G02F1/39 , H01S3/06 , H01S3/094 , H01S3/0941 , H01S3/108 , H01S3/11 , H01S3/17 , H01S5/02 , H01S5/04 , H01S5/183 , H01L21/20
CPC分类号： H01S3/0627 , B32B37/1292 , H01S3/0604 , H01S3/0615 , H01S3/09415 , H01S3/108 , H01S3/115 , H01S5/0215 , H01S5/041 , H01S5/183
摘要： This invention relates to a procedure for assembling two structures (2, 4) comprising:formation on at least one of the structures of studs (12, 14, 16) made of a material that can flow and is wettable on both structures,positioning of the two structures such that said studs are on their interface,assembly of the two structures by heating the studs causing them to flow, and by bringing the two structures together as intimately as possible.According to a different procedure, joints made of a fluidizable, wettable material are incorporated in notches etched into one of the structures to be assembled.Application to microlasers.
摘要翻译： 本发明涉及一种用于组装两个结构（2,4）的程序，包括：在至少一个由两个结构上流动并可湿润的材料制成的螺柱（12,14,16）的结构中形成，定位 两个结构使得所述螺柱位于它们的界面上，通过加热螺柱使它们流动并且通过使两个结构尽可能密切地组合在一起来组装两个结构。 根据不同的程序，由可流化的可润湿材料制成的接头被并入刻蚀成要组装的结构之一的凹口中。 应用于微型玻璃
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7.发明授权Method for manufacturing a very-high-resolution screen using a nanowire-based emitting anisotropic conductive film 有权使用基于纳米线的各向异性导电膜制造非常高分辨率的屏幕的方法公开(公告)号：US08890111B2
公开(公告)日：2014-11-18
申请号：US13503480
申请日：2010-10-19
CPC分类号： H01L27/156 , B82Y20/00 , H01L33/0079 , H01L33/08 , H01L33/18 , H01L2924/0002 , H01L2924/00
摘要： A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.
摘要翻译： 一种用于制造发射像素屏幕的方法包括形成有源像素矩阵，电极形成层沿着该有源像素阵列运行并具有根据分布布置的像素，形成各向异性衬底，该各向异性衬底包括由平行的纳米线构成的一组发光二极管， 绝缘基体相对于衬底厚度横向地具有高于像素密度的密度，而不管像素分布如何，通过将平行纳米线的子组连接到第一端而将衬底连接到有源像素矩阵，以分离 根据矩阵中的像素的分布在电极形成层中限定的像素电极，并且将另一端的子组连接到公共电极，并且通过使基板的纳米线 排列在子组之间，不起作用。
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8.发明申请EPITAXIAL METHODS AND STRUCTURES FOR REDUCING SURFACE DISLOCATION DENSITY IN SEMICONDUCTOR MATERIALS 失效用于减少半导体材料表面偏离密度的外延方法和结构公开(公告)号：US20100244197A1
公开(公告)日：2010-09-30
申请号：US12721461
申请日：2010-03-10
申请人： Chantal Arena , Laurent Clavelier , Marc Rabarot
发明人： Chantal Arena , Laurent Clavelier , Marc Rabarot
IPC分类号： H01L29/20 , H01L21/302
CPC分类号： H01L29/2003 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639
摘要： The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a plurality of dislocation pit plugs to prevent propagation of dislocations from an underlying layer of material into a following semiconductor layer of material.
摘要翻译： 本发明提供了用于减少半导体层的表面位错的方法和结构，并且可以在半导体结构和包含III族氮化物材料的层的外延生长期间使用。 实施例涉及形成多个位错坑塞，以防止位错从材料的下层扩散到随后的材料半导体层中。
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9.发明申请METHOD FOR MANUFACTURING A VERY-HIGH-RESOLUTION SCREEN USING A NANOWIRE-BASED EMITTING ANISOTROPIC CONDUCTIVE FILM 有权使用基于纳米级的发射异相导电膜制造高分辨率屏幕的方法公开(公告)号：US20120205614A1
公开(公告)日：2012-08-16
申请号：US13503480
申请日：2010-10-19
CPC分类号： H01L27/156 , B82Y20/00 , H01L33/0079 , H01L33/08 , H01L33/18 , H01L2924/0002 , H01L2924/00
摘要： A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.
摘要翻译： 一种用于制造发射像素屏幕的方法包括形成有源像素矩阵，电极形成层沿着该有源像素阵列运行并具有根据分布布置的像素，形成各向异性衬底，该各向异性衬底包括由平行的纳米线构成的一组发光二极管， 绝缘基体相对于衬底厚度横向地具有不同于像素分布的密度高于像素密度的密度，通过将平行纳米线的子组连接到第一端而将衬底连接到有源像素矩阵，以分离 根据矩阵中的像素的分布在电极形成层中限定的像素电极，并且将另一端的子组连接到公共电极，并且通过使基板的纳米线 排列在子组之间，不起作用。
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10.发明授权Epitaxial methods for reducing surface dislocation density in semiconductor materials 失效降低半导体材料表面位错密度的外延方法公开(公告)号：US08178427B2
公开(公告)日：2012-05-15
申请号：US12721461
申请日：2010-03-10
申请人： Chantal Arena , Laurent Clavelier , Marc Rabarot
发明人： Chantal Arena , Laurent Clavelier , Marc Rabarot
IPC分类号： H01L21/20
CPC分类号： H01L29/2003 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639
摘要： The invention provides methods and structures for reducing surface dislocations of a semiconductor layer, and can be employed during the epitaxial growth of semiconductor structures and layers comprising III-nitride materials. Embodiments involve the formation of a plurality of dislocation pit plugs to prevent propagation of dislocations from an underlying layer of material into a following semiconductor layer of material.
摘要翻译： 本发明提供了用于减少半导体层的表面位错的方法和结构，并且可以在半导体结构和包含III族氮化物材料的层的外延生长期间使用。 实施例涉及形成多个位错坑塞，以防止位错从材料的下层扩散到随后的材料半导体层中。
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