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    Microelectronic workpiece processing systems and associated methods of color correction
    22.
    发明授权
    Microelectronic workpiece processing systems and associated methods of color correction 有权

    公开(公告)号：US11075319B2

    公开(公告)日：2021-07-27

    申请号：US16434956

    申请日：2019-06-07

    Applicant: Micron Technology, Inc.

    Inventor： Kevin Tetz ,  Charles M. Watkins

    IPC: H01L33/00 ,  B05C11/00

    Abstract: Several embodiments of semiconductor systems and associated methods of color corrections are disclosed herein. In one embodiment, a method for producing a light emitting diode (LED) includes forming an (LED) on a substrate, measuring a base emission characteristic of the formed LED, and selecting a phosphor based on the measured base emission characteristic of the formed LED such that a combined emission from the LED and the phosphor at least approximates white light. The method further includes introducing the selected phosphor onto the LED via, for example, inkjet printing.

    Microelectronic workpiece processing systems and associated methods of color correction
    23.
    发明授权
    Microelectronic workpiece processing systems and associated methods of color correction 有权

    公开(公告)号：US10319875B2

    公开(公告)日：2019-06-11

    申请号：US14269348

    申请日：2014-05-05

    Applicant: Micron Technology, Inc.

    Inventor： Kevin Tetz ,  Charles M. Watkins

    IPC: H01L21/66 ,  G01R31/26 ,  H01L33/00 ,  B05C11/00

    Abstract: Several embodiments of semiconductor systems and associated methods of color corrections are disclosed herein. In one embodiment, a method for producing a light emitting diode (LED) includes forming an (LED) on a substrate, measuring a base emission characteristic of the formed LED, and selecting a phosphor based on the measured base emission characteristic of the formed LED such that a combined emission from the LED and the phosphor at least approximates white light. The method further includes introducing the selected phosphor onto the LED via, for example, inkjet printing.

    BACK-TO-BACK SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS
    27.
    发明申请
    BACK-TO-BACK SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS 审中-公开
    背靠背固态照明设备及相关方法

    公开(公告)号：US20160372451A1

    公开(公告)日：2016-12-22

    申请号：US15252156

    申请日：2016-08-30

    Applicant: Micron Technology, Inc.

    Inventor： Cem Basceri ,  Casey Kurth ,  Kevin Tetz

    IPC: H01L25/00 ,  H01L33/50 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075 ,  H01L33/38

    CPC classification number: H01L25/50 ,  H01L25/0756 ,  H01L33/382 ,  H01L33/486 ,  H01L33/501 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0041 ,  H05K1/0203 ,  H05K1/0306 ,  H05K2201/10106 ,  H01L2924/00

    Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

    Abstract translation: 本文公开了包括背对背固态发射器（SSEs）和相关方法的固态光（SSL）。 在各种实施例中，SSL可以包括具有不同于第一表面的第一表面和第二表面的载体衬底。 第一和第二通过衬底互连（TSI）可以从载体衬底的第一表面延伸到第二表面。 SSL还可以包括第一和第二SSE，每个SSE具有与前侧相对的前侧和后侧。 第一SSE的背面面向载体基板的第一表面，并且第一SSE电耦合到第一和第二TSI。 第二SSE的背面面向载体基板的第二表面，而第二SSE电耦合到第一和第二TSI。

    Back-to-back solid state lighting devices and associated methods
    28.
    发明授权
    Back-to-back solid state lighting devices and associated methods 有权

    公开(公告)号：US12191298B2

    公开(公告)日：2025-01-07

    申请号：US18340602

    申请日：2023-06-23

    Applicant: Micron Technology, Inc.

    Inventor： Cem Basceri ,  Casey Kurth ,  Kevin Tetz

    IPC: H01L25/00 ,  H01L25/075 ,  H01L33/38 ,  H01L33/48 ,  H01L33/50 ,  H01L33/62 ,  H05K1/02 ,  H05K1/03

    Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

    Back-to-back solid state lighting devices and associated methods
    30.
    发明授权
    Back-to-back solid state lighting devices and associated methods 有权

    公开(公告)号：US11037918B2

    公开(公告)日：2021-06-15

    申请号：US16046686

    申请日：2018-07-26

    Applicant: Micron Technology, Inc.

    Inventor： Cem Basceri ,  Casey Kurth ,  Kevin Tetz

    IPC: H01L25/00 ,  H01L33/38 ,  H01L25/075 ,  H01L33/48 ,  H01L33/50 ,  H01L33/62 ,  H05K1/02 ,  H05K1/03

    Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.

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