公开(公告)号：US12062688B2

公开(公告)日：2024-08-13

申请号：US17236865

申请日：2021-04-21

Applicant: Micron Technology, Inc.

Inventor： Richard Beeler ,  Matthew N. Rocklein ,  Timothy A. Quick ,  An-Jen B. Cheng ,  Sumeet C. Pandey

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H01L28/75 ,  H01L28/40 ,  H01L28/55 ,  H01L28/56 ,  H10B12/30

Abstract: Some embodiments include dielectric material having a first region containing HfO and having a second region containing ZrO, where the chemical formulas indicate primary constituents rather than specific stoichiometries. The first region contains substantially no Zr, and the second region contains substantially no Hf. Some embodiments include capacitors having a first electrode, a second electrode, and a dielectric material between the first and second electrodes. The dielectric material includes one or more first regions and one or more second regions. The first region(s) contain(s) Hf and substantially no Zr. The second region(s) contain(s) Zr and substantially no Hf. Some embodiments include memory arrays.

公开(公告)号：US11735672B2

公开(公告)日：2023-08-22

申请号：US17216269

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Aaron Michael Lowe ,  Zhuo Chen ,  Marko Milojevic ,  Timothy A. Quick ,  Richard J. Hill ,  Scott E. Sills

IPC: H01L29/786 ,  H01L27/13 ,  H01L27/12 ,  H10B53/20 ,  H10B12/00

CPC classification number: H01L29/78642 ,  H01L27/1203 ,  H01L27/13 ,  H10B12/05 ,  H10B12/31 ,  H10B53/20

Abstract: Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US11651955B2

公开(公告)日：2023-05-16

申请号：US17215958

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02312

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US11152205B2

公开(公告)日：2021-10-19

申请号：US15913218

申请日：2018-03-06

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Sumeet C. Pandey ,  Stefan Uhlenbrock

IPC: H01L21/02 ,  C01B21/068 ,  H01L21/768 ,  C09D7/63 ,  C23C16/00 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C07F7/02

Abstract: A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

公开(公告)号：US20210217611A1

公开(公告)日：2021-07-15

申请号：US17215958

申请日：2021-03-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US10153200B2

公开(公告)日：2018-12-11

申请号：US15090144

申请日：2016-04-04

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: B81C1/00 ,  H01L21/311 ,  H01L21/768 ,  B82Y30/00 ,  H01L21/033 ,  C08F299/02 ,  C08F299/04 ,  G03F7/00

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

公开(公告)号：US20180144927A1

公开(公告)日：2018-05-24

申请号：US15857920

申请日：2017-12-29

Applicant: Micron Technology, Inc.

Inventor： Sumeet C. Pandey ,  Brenda D. Kraus ,  Stefan Uhlenbrock ,  John A. Smythe ,  Timothy A. Quick

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02312 ,  H01L21/0234

Abstract: Methods of forming silicon nitride. Silicon nitride is formed on a substrate by atomic layer deposition at a temperature of less than or equal to about 275° C. The as-formed silicon nitride is exposed to a plasma. The silicon nitride may be formed as a portion of silicon nitride and at least one other portion of silicon nitride. The portion of silicon nitride and the at least one other portion of silicon nitride may be exposed to a plasma treatment. Methods of forming a semiconductor structure are also disclosed, as are semiconductor structures and silicon precursors.

公开(公告)号：US20160218032A1

公开(公告)日：2016-07-28

申请号：US15090144

申请日：2016-04-04

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: H01L21/768 ,  B81C1/00 ,  H01L21/311

CPC classification number: C08F299/0492 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了使用自组装嵌段共聚物制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US08765519B2

公开(公告)日：2014-07-01

申请号：US14083084

申请日：2013-11-18

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L21/00 ,  H01L21/06

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Abstract translation: 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

公开(公告)号：US20140107296A1

公开(公告)日：2014-04-17

申请号：US14104304

申请日：2013-12-12

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: C08F299/04 ,  C08F299/02

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了使用自组装嵌段共聚物制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。