摘要:
A method of manufacturing a semiconductor device having a semiconductor substrate of a first conductivity type, an N-type diffusion layer formed in the substrate, and a P-type diffusion layer formed in the substrate. Two contact holes are formed in separate steps, thus exposing the N-type diffusion layer and the P-type diffusion layer, respectively. Hence, when one of the diffusion layers is again doped with an impurity, or again heat-treated, the other diffusion layer is already protected by inter-layer insulation film. Therefore, the impurity cannot diffuse into the contact formed in the contact hole made in the other diffusion layer. As a result of this, SAC technique can be successfully achieved, without deteriorating the characteristic of the contact. In addition, since two contact holes are made in a polysilicon wiring strip and the diffusion layer to which the SAC technique is applied, in separate steps, the SAC technique can be successfully accomplished, without deteriorating the characteristic of the MOSFET formed in the semiconductor device.
摘要:
A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group,a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.
摘要:
Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.
摘要:
A nonvolatile semiconductor memory device having a gate insulating film with a memory function. An impurity layer having the same conductivity type as that of the substrate region is formed in that substrate region, underlying the gate insulating film having a memory function, in which a channel is formed. The impurity layer has an impurity profile in which a peak of an impurity concentration is in the region distanced by 500 .ANG. or less from the surface of the substrate region and the impurity concentration is 1.times.10.sup.18 cm.sup.-3 or less in the region at the depth of 500 .ANG. or more.
摘要翻译:一种具有具有记忆功能的栅极绝缘膜的非易失性半导体存储器件。 在其中形成沟道的具有记忆功能的栅极绝缘膜下方的衬底区域中形成具有与衬底区域相同的导电类型的杂质层。 杂质层具有杂质浓度在距离衬底区域的表面远离500或更小的区域中的杂质分布,并且在深度的区域中杂质浓度为1×10 18 cm -3或更小 500 ANGSTROM以上。
摘要:
The invention provides a communication apparatus used inside a house, a communication system connected thereto, a communication process, and computer program used therefore. The communication apparatus of the present invention connected via a network to one or more terminal appliances in the house, communicates with the outside via two or more different communication configurations including a first communication configuration with a high speed digital transmission technique and a second communication configuration providing service for telephone subscribers. The communication apparatus is characterized in recognizing a situation thereby to disconnect the first communication configuration and to use only the second communication configuration for communication with the outside.
摘要:
The present invention provides a chemical amplification type positive resist composition comprising (A) a resin which comprises (i) 5 to 50% by mol of a structural unit of the formula (I), (ii) 5 to 50% by mol of a structural unit of the formula (II) and (iii) 5 to 50% by mol of at least one selected from the group consisting of structural units of the formulas (III) and (IV), and (B) an acid generator. The present composition is suitable for excimer laser lithography using ArF, KrF and the like, and shows various outstanding resist abilities, specifically, gives better effective sensitivity and resolution to resist patterns obtained therefrom, and gives particularly excellent pattern shape and excellent line edge roughness.
摘要:
A communication system includes an information terminal apparatus having at least a data collecting portion for collecting appliance information of an appliance, a data processing server apparatus and a communication device which can be communicated with the information terminal apparatus, and first and second communication networks for connection between the information terminal apparatus and the data processing server apparatus. The first communication network is a communication configuration with a high speed digital transmission technique, and the second communication network is another communication configuration providing service for telephone subscribers. The information terminal apparatus communicates the appliance information with the data processing server apparatus through the first communication network, and uses the second communication network for communicating a particular appliance information with the communication device.
摘要:
An electrically conductive resin composition comprising a polyamide, a polyphenylene ether, an impact modifier and an electrically conductive filler, wherein more than 0 and less than 50 wt. % of all of the filler used is preliminarily compounded with a mixture containing the impact modifier and the polyphenylene ether. The resin composition has an excellent balance of electrical conductivity and Dart impact strength at low temperatures, and excellent stiffness at high temperatures, thermal resistance, fluidity, and surface appearance.
摘要:
An acoustic matching member that is incorporated into an ultrasonic transducer for transmitting and receiving ultrasonic waves, includes: at least two layers including a first layer and a second layer that have different acoustic impedance values from each other. The first layer is made of a composite material of a porous member and a filing material supported by void portions of the porous member, the second layer is made of the filling material or the porous member, and the first layer and the second layer are present in this stated order. A piezoelectric member is disposed on a side of the first layer of the acoustic matching member to form an ultrasonic transducer or an ultrasonic flowmeter. The acoustic matching member does not have independent intermediate layers between the layers, so that delamination hardly occurs and the difficulty in the designing associated with the presence of intermediate layers can be avoided.
摘要:
There is provided a resist composition containing a photosensitive resin and used in photolithography, said photosensitive resin having a transmittance of 40% or more for a light having a wavelength of 157 nm in applying to a thickness of 0.1 &mgr;m. The composition has a characteristic that it allows easy formation of a fine pattern having a good profile, particularly at a wavelength for exposure with an F2 excimer laser.