Abstract:
A process for manufacturing a thin film magnetic head, the improvement wherein a metal, alloy or mixture thereof which improves the surface characteristics of a vacuum baked photoresist is deposited on the vacuum baked photoresist to thereby improve adhesion of a subsequently deposited layer.
Abstract:
The ion-beam monitor determines the distribution of the ion beam intensity by scanning a flat pellet of Al.sub.2 O.sub.3 with the ion beam and detecting the ultra violet radiation emitted from the Al.sub.2 O.sub.3 pellet and recording the same at each step of the scanning operation.
Abstract translation:离子束监测器通过用离子束扫描Al 2 O 3的平坦粒子并检测从Al 2 O 3粒子发射的紫外线辐射并在扫描操作的每个步骤中记录它们来确定离子束强度的分布。
Abstract:
A solid-state color imager comprised of a solid-state base comprised of a plurality of electrical switching elements said base further including photosensitive elements associated with some of the switching elements arranged in sets having superimposed thereon a plurality of photosensor layers which can detect and absorb different colors of light. Each photosensitive layer is comprised of an upper transparent continuous electrode sublayer, a photoconductive sublayer, and a back mosaic transparent electrode sublayer which is electrically connected to said base. When light strikes the outermost photosensitive layer, light of a particular color is absorbed, and in connection with said base, its presence is electrically detected and recorded. The unabsorbed light continues to travel and strike the next succeeding photosensor layer whereat another color of light is absorbed and detected. The unabsorbed light passing through the second photosensor layer strikes the photosensitive elements of the base which detect the remaining light. The photosensor layers are electrically insulated from each other and the base and in connection with the photosensitive elements of the base make possible detection of three separate colors of light such as blue, green and red without the use of multi-color filter arrays, although in some embodiments a monocolor filter is used.
Abstract:
A solid state imaging device comprises a transparent electrode, a photoconductive layer, and a plurality of scanning circuits for consecutively selecting signals in the photoconductive layer. The photoconductive layer is formed of amorphous semiconductor comprising amorphous silicon as the major component and further containing an element serving to lower the capture level within the energy gap and a trace amount of chalcogen element as a chemical modifier.
Abstract:
A phase difference detector of the type capable of distinguishing a focused state by detecting relative positions of a pair of optical images obtained from an object, comprises sensor means adapted to photoelectrically convert the pair of optical images and to output a first analog electrical signal corresponding to one of the optical images and a second analog electrical signal corresponding to the other optical image, the signals being generated by the photoelectric conversion, at a predetermined period and in a non-destructive manner, and analog arithmetic means for subjecting the pair of analog electrical signals output from the sensor means to a correlative arithmetic operation.
Abstract:
A solid-state image pickup device with charge coupled devices in an interline transfer system has an improved charge transfer electrode structure. Charge transfer electrodes do not overlap, but rather are separated from adjacent charge transfer electrodes by an extremely small distance, preferably about 0.2 .mu.m. Processes for forming such an improved solid-state image pickup device are also disclosed.
Abstract:
A method for reading out signal charges in a solid-state image pickup unit providing either an improved resolution for a constant vertical integration density or a reduced vertical integration density while maintaining the same resolution. The photoelectric conversion elements of the unit are arranged in a matrix of rows and columns with m rows of photoelectric conversion elements being assigned to each scanning line. Signal charges generated in the photoelectric conversion elements during exposure are transferred to a vertical transfer section in the order of the m-th row to the first row in each scanning line, and then the charges are transferred to a horizontal charge transfer section using a four-phase driving method.
Abstract:
A solid-state image pickup device includes a semiconductor structure, a photosensitive cell array formed on the semiconductor structure and having a plurality of photosensitive cells, and a shift register formed on the semiconductor structure for selectively driving a plurality of photosensitive cells of the cell array to cause pixel signals to be produced therefrom. The shift register includes a plurality of register stages associated with the cell array, and two sets of an initiator circuit and a terminator circuit, each set being arranged at the ends of the plurality of register stages. Interconnections between the plurality of register stages, and selective connections between the two sets of the initiator and terminator circuits and the first and last stages of the plurality of register stages are formed in manufacturing processes on the semiconductor structure in accordance with a direction in which the shift register is to be driven in shifting operation.A method of manufacturing the solid-state image pickup device is also provided.
Abstract:
A solid-state color imager comprised of a solid-state base comprised of a plurality of electrical switching elements said base further including photosensitive elements associated with some of the switching elements arranged in sets having superimposed thereon a plurality of photosensor layers which can detect and absorb different colors of light. Each photosensitive layer is comprised of an upper transparent continuous electrode sublayer, a photoconductive sublayer, and a back mosaic transparent electrode sublayer which is electrically connected to said base. When light strikes the outermost photosensitive layer, light of a particular color is absorbed, and in connection with said base, its presence is electrically detected and recorded. The unabsorbed light continues to travel and strike the next succeeding photosensor layer whereat another color of light is absorbed and detected. The unabsorbed light passing through the second photosensor layer strikes the photosensitive elements of the base which detect the remaining light. The photosensor layers are electrically insulated from each other and the base and in connection with the photosensitive elements of the base make possible detection of three separate colors of light such as blue, green and red without the use of multi-color filter arrays, although in some embodiments a monocolor filter is used.
Abstract:
A solid-state color imager comprised of a solid-state base comprised of a plurality of charge switching elements said base further including photodiode elements associated with some of the switching elements arranged in sets having superimposed thereon a photosensor layer comprised of photoconductor segments which can detect and absorb light. A plurality of mono colored stripe filters are superimposed over the photosensitive layer. The photosensitive layer is comprised of an upper transparent continuous electrode sublayer, a photoconductive sublayer, and a back mosaic transparent electrode sublayer which is electrically connected to said base. When light strikes the filter stripes, light of a particular color is absorbed. The unabsorbed light continues to travel and strike the photosensor layer whereat another color of light is absorbed and detected. The unabsorbed light passing through the photosensor layer and perhaps a stripe filter, strikes the photodiode elements of the base which detect the remaining light. The photosensor layer is electrically insulated from the base and in connection with the photodiode elements of the base and filter stripes, make possible detection of three separate colors of light such as blue, green and red without the use of multi-color filter arrays.