公开(公告)号：US07473948B2

公开(公告)日：2009-01-06

申请号：US11941675

申请日：2007-11-16

申请人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

发明人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

IPC分类号： H01L29/06

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：<？in-line-formula description =“In-line Formulas”end =“lead”？> C2

公开(公告)号：US20080036019A1

公开(公告)日：2008-02-14

申请号：US10599427

申请日：2005-04-27

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

IPC分类号： H01L27/14

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H04N5/335

摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，第三和第四半导体区域形成在第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。

公开(公告)号：US20110027934A1

公开(公告)日：2011-02-03

申请号：US12904269

申请日：2010-10-14

申请人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

发明人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

IPC分类号： H01L31/18

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.

摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。

公开(公告)号：US20080203450A1

公开(公告)日：2008-08-28

申请号：US12026623

申请日：2008-02-06

申请人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

发明人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

IPC分类号： H01L31/00

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.

摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。

公开(公告)号：US08304278B2

公开(公告)日：2012-11-06

申请号：US12904269

申请日：2010-10-14

申请人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

发明人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

IPC分类号： H01L31/18

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.

摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。

公开(公告)号：US07838918B2

公开(公告)日：2010-11-23

申请号：US12026623

申请日：2008-02-06

申请人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

发明人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

IPC分类号： H01L31/00

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.

摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。

公开(公告)号：US20080230685A1

公开(公告)日：2008-09-25

申请号：US12111342

申请日：2008-04-29

申请人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

发明人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1462

摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.

摘要翻译： 光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。 绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。 折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。 在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。 晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。 具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准 膜和氧化硅膜。

公开(公告)号：US5700719A

公开(公告)日：1997-12-23

申请号：US414049

申请日：1995-03-30

申请人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

发明人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

IPC分类号： H01L23/52 ,  C23C14/56 ,  C23C16/04 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/532 ,  H01L29/49 ,  H01L21/443

CPC分类号： H01L29/4933 ,  C23C14/568 ,  C23C16/04 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53271 ,  H01L29/4925 ,  H01L2924/0002 ,  Y10S148/02

摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.

摘要翻译： 一种半导体器件，其中与相互不同的导电类型的半导体层接触并且用于至少连接相互不同的导电类型的层的电极布线包括主要由与主要成分相同的部件组成的第一部分 半导体层和由金属组成的第二部分。

公开(公告)号：US5599741A

公开(公告)日：1997-02-04

申请号：US479385

申请日：1995-06-07

申请人： Shigeyuki Matsumoto ,  Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Jun Nakayama

发明人： Shigeyuki Matsumoto ,  Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Shunsuke Inoue ,  Jun Nakayama

IPC分类号： H01L21/266 ,  H01L21/336 ,  H01L21/768 ,  H01L29/49 ,  H01L29/78 ,  H01L21/44 ,  H01L21/22

CPC分类号： H01L29/6659 ,  H01L21/266 ,  H01L21/76879 ,  H01L29/4925 ,  H01L29/66659 ,  H01L29/7835 ,  H01L29/7836

摘要： A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.

摘要翻译： 包括场效应晶体管的半导体器件具有形成在半导体衬底的主表面上的源极和漏极区域以及跨越栅极绝缘膜的主表面上形成的栅电极。 栅电极具有形成在第一电极部分上的具有供电子表面的第一电极部分和由金属组成的第二电极部分。

公开(公告)号：US5561317A

公开(公告)日：1996-10-01

申请号：US478447

申请日：1995-06-07

申请人： Genzo Momma ,  Hiroshi Yuzurihara

发明人： Genzo Momma ,  Hiroshi Yuzurihara

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L23/544

CPC分类号： G03F7/70433 ,  G03F7/2002 ,  G03F7/70475 ,  H01L21/0274 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing semiconductor devices in which a desired pattern having an area size larger than the field size that can be obtained in one exposure process step of an exposure device is formed. The manufacturing method includes the steps of dividing the desired pattern into a plurality of portions, and conducting exposure on the dividing patterns in a joined fashion.

摘要翻译： 公开了一种制造半导体器件的方法，其中形成了具有比在曝光装置的一个曝光处理步骤中可获得的场尺寸大的面积尺寸的期望图案。 该制造方法包括以下步骤：将期望的图案分成多个部分，并以连接的方式在分割图案上进行曝光。