公开(公告)号：US20060276041A1

公开(公告)日：2006-12-07

申请号：US11433508

申请日：2006-05-15

申请人： Kazuhito Uchikura ,  Tomohisa Konno ,  Nobuo Kawahashi ,  Masayuki Hattori

发明人： Kazuhito Uchikura ,  Tomohisa Konno ,  Nobuo Kawahashi ,  Masayuki Hattori

IPC分类号： C09K13/00 ,  H01L21/461 ,  C03C15/00 ,  H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463

摘要： A chemical mechanical polishing aqueous dispersion, including: (A) inorganic particles; (B) at least one type of particles selected from the group consisting of organic particles and organic-inorganic composite particles; (C) at least one compound selected from the group consisting of quinolinecarboxylic acid, quinolinic acid, a divalent organic acid (excluding quinolinic acid), and a hydroxyl acid; (D) at least one compound selected from the group consisting of benzotriazole and benzotriazole derivatives; (E) an oxidizing agent; and (F) water, the chemical mechanical polishing aqueous dispersion containing the component (A) in an amount of 0.05 to 2.0 wt % and the component (B) in an amount of 0.005 to 1.5 wt %, having a ratio (WA/WB) of the amount (WA) of the component (A) to the amount (WB) of the component (B) of 0.1 to 200, and having a pH of 1.0 to 5.0.

摘要翻译： 化学机械抛光水分散体，包括：（A）无机颗粒; （B）选自有机颗粒和有机 - 无机复合颗粒的至少一种类型的颗粒; （C）至少一种选自喹啉羧酸，喹啉酸，二价有机酸（不包括喹啉酸）和羟基酸的化合物; （D）至少一种选自苯并三唑和苯并三唑衍生物的化合物; （E）氧化剂; 和（F）水，含有0.05〜2.0重量％的成分（A）的化学机械研磨用水系分散体和0.005〜1.5重量％的成分（B），其比例（W

公开(公告)号：US20060201914A1

公开(公告)日：2006-09-14

申请号：US11369870

申请日：2006-03-08

申请人： Kazuhito Uchikura ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Kazuhito Uchikura ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C09K13/00 ,  C03C15/00 ,  B44C1/22

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： A chemical mechanical polishing aqueous dispersion, including: (A) abrasives; (B) an organic acid; (C) benzotriazole or a benzotriazole derivative; (D) a poly(meth)acrylate; (E) an oxidizing agent; and (F) water, the abrasives (A) being included in the chemical mechanical polishing aqueous dispersion in an amount of 2 to 10 wt %.

摘要翻译： 化学机械抛光水性分散体，包括：（A）研磨剂; （B）有机酸; （C）苯并三唑或苯并三唑衍生物; （D）聚（甲基）丙烯酸酯; （E）氧化剂; 和（F）水，研磨剂（A）以2〜10重量％的量包含在化学机械研磨用水系分散体中。

公开(公告)号：US20050284844A1

公开(公告)日：2005-12-29

申请号：US11165278

申请日：2005-06-24

申请人： Masayuki Hattori ,  Yuji Namie ,  Nobuo Kawahashi

发明人： Masayuki Hattori ,  Yuji Namie ,  Nobuo Kawahashi

IPC分类号： C03C15/00 ,  C09K13/00 ,  C11D7/06 ,  C11D7/22 ,  C11D7/32 ,  C11D7/34 ,  C11D11/00 ,  C23F1/00 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/02074 ,  C11D3/3765 ,  C11D3/3773 ,  C11D7/06 ,  C11D7/3209 ,  C11D11/0047

摘要： A cleaning composition for semiconductor components comprises a water-soluble polymer (a) having a specific molecular weight and a compound (b) represented by the following formula (1): NR4OH  (1) wherein each R is independently a hydrogen atom or an alkyl group of 1 to 6 carbon atoms. A process for manufacturing a semiconductor device comprises chemical mechanical polishing a semiconductor component, and cleaning the semiconductor component with the cleaning composition for semiconductor components. The cleaning composition exerts a high cleaning effect on impurities remaining on a polished surface of a semiconductor component after chemical mechanical polishing, and becomes little burden on the environment.

摘要翻译： 用于半导体组件的清洁组合物包括具有特定分子量的水溶性聚合物（a）和由下式（1）表示的化合物（b）：<？在线公式描述=“在线配方” end =“lead”→NR 4 OH（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中每个R独立地为氢原子 或1〜6个碳原子的烷基。 半导体器件的制造方法包括半导体部件的化学机械研磨，以及半导体部件用清洗组合物的半导体部件的清洗。 清洗组合物对化学机械抛光后残留在半导体组件的抛光表面上的杂质产生高清洁效果，并且对环境的负担很小。

公开(公告)号：US06559056B2

公开(公告)日：2003-05-06

申请号：US09858924

申请日：2001-05-17

申请人： Masayuki Hattori ,  Hitoshi Kishimoto ,  Nobuo Kawahashi

发明人： Masayuki Hattori ,  Hitoshi Kishimoto ,  Nobuo Kawahashi

IPC分类号： H01L21302

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： The object of the present invention is to provide an aqueous dispersion for chemical mechanical polishing which can be polished working film for semiconductor devices and which is useful for STI. The aqueous dispersion for chemical mechanical polishing of the invention is characterized by comprising an inorganic abrasive such as silica, ceria and the like, and organic particles composed of a resin having anionic group such as carboxyl group into the molecular chains. The removal rate for silicon oxide film is at least 5 times, particularly 10 times the removal rate for silicon nitride film. The aqueous dispersion may also contain an anionic surfactant such as potassium dodecylbenzene sulfonate and the like. And a base may also be included in the aqueous dispersion for adjustment og the pH to further enhance the dispersability, removal rate and selectivity.

公开(公告)号：US07163448B2

公开(公告)日：2007-01-16

申请号：US10833089

申请日：2004-04-28

申请人： Masayuki Hattori ,  Nobuo Kawahashi

发明人： Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： B24B1/00

CPC分类号： H01L21/31053 ,  H01L21/76229

摘要： A chemical/mechanical polishing method for polishing an object to be polished with an irregular surface, having a substrate with convexities and concavities, a stopper layer formed on the convexities of the substrate, and an embedded insulating layer formed to cover the concavities of the substrate and the stopper layer, wherein the method is characterized comprising a first polishing step of flattening the embedded insulating layer using a slurry (A) which can maintain the polishing speed at 500 Å/min or less and a second polishing step of further polishing the embedded insulating layer to cause the stopper layer on the convexities to be exposed using a slurry (B) which can maintain the polishing speed at 600 Å/min or more. The method is useful for flattening wafers during shallow trench isolation (STI) in manufacturing semiconductor devices.

摘要翻译： 一种用不规则表面抛光待抛光物体的化学/机械抛光方法，具有凸起和凹凸的基底，形成在基底的凸部上的阻挡层和形成为覆盖基底的凹部的嵌入绝缘层 和阻挡层，其特征在于，该方法的特征在于包括使用能够将抛光速度保持在500埃/分钟以下的浆料（A）来平坦化嵌入绝缘层的第一抛光步骤和进一步抛光嵌入的第二抛光步骤 使得能够使抛光速度保持在600 / min以上的浆料（B）使凸部上的阻挡层露出。 该方法在制造半导体器件中的浅沟槽隔离（STI）期间对于平坦化晶片是有用的。

公开(公告)号：US20060010781A1

公开(公告)日：2006-01-19

申请号：US11180619

申请日：2005-07-14

申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： B24D11/00 ,  B24D3/02

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

公开(公告)号：US20050176606A1

公开(公告)日：2005-08-11

申请号：US11052910

申请日：2005-02-09

申请人： Tomohisa Konno ,  Kiyonobu Kubota ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Tomohisa Konno ,  Kiyonobu Kubota ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： B08B1/04 ,  B08B3/08 ,  C11D3/37 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  C11D1/00

CPC分类号： H01L21/02074 ,  C11D3/3765 ,  C11D11/0047 ,  H01L21/3212

摘要： The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.

摘要翻译： 该清洁组合物包含具有交联结构的有机聚合物颗粒（A）和表面活性剂（B），并在化学机械抛光后使用。 半导体衬底的清洁方法是通过使用清洁组合物来清洁化学机械抛光后的半导体衬底的清洗方法。 通过清洗方法制造半导体器件的方法，该半导体器件包括化学和机械抛光半导体衬底的步骤以及在化学机械抛光之后获得的半导体衬底的清洁步骤。

公开(公告)号：US20050037693A1

公开(公告)日：2005-02-17

申请号：US10882362

申请日：2004-07-02

申请人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

发明人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/02074 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

公开(公告)号：US20050001199A1

公开(公告)日：2005-01-06

申请号：US10878052

申请日：2004-06-29

申请人： Masayuki Hattori ,  Nobuo Kawahashi

发明人： Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： A01N25/04 ,  A01N33/20 ,  A01N37/34 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/304 ,  C09K5/00

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： The aqueous dispersion comprising (A) abrasive grains, (B) at least one compound selected from the group consisting of 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1,3-butanediol, 2,2-dibromo-2-nitroethanol, and 2,2-dibromo-3-nitrilopropionamide, and (C) an organic component other than the compounds of component (B is disclosed. The aqueous dispersion has no problem of rotting even if stored or used in a neutral pH region and produces an excellent polished surface with almost no dishing or scratches, when applied particularly to the STI process for manufacturing of semiconductor devices.

摘要翻译： 所述水性分散体包含（A）磨粒，（B）至少一种选自2-溴-2-硝基-1,3-丙二醇，2-溴-2-硝基-1,3-丁二醇 ，2,2-二溴-3-硝基丙酰胺和2,2-二溴-3-硝基丙酰胺，（C）除了组分（B）的化合物以外的有机成分，即使是水分散体也没有腐烂的问题 储存或使用在中性pH区域，并且当特别用于制造半导体器件的STI工艺时，产生几乎没有凹陷或划痕的优异的抛光表面。

公开(公告)号：US06832949B2

公开(公告)日：2004-12-21

申请号：US10279843

申请日：2002-10-25

申请人： Tomohisa Konno ,  Masayuki Motonari ,  Masayuki Hattori ,  Kou Hasegawa ,  Nobuo Kawahashi

发明人： Tomohisa Konno ,  Masayuki Motonari ,  Masayuki Hattori ,  Kou Hasegawa ,  Nobuo Kawahashi

IPC分类号： B24B500

CPC分类号： B24B37/205

摘要： An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain. A polishing pad may be the one that a window member is fitted in a through hole of a substrate for a polishing pad (comprised of polyurethane resin and the like, disc-like, belt-like or the like) provided with a through hole penetrating from surface to back, or adhered to a substrate for a polishing pad so as to cover an opening part of the through hole.

摘要翻译： 本发明的目的是提供一种化学机械抛光用的窗构件，其防污性和透明性优异，抗划伤性优异，并且还可以容易地进行半导体表面的研磨终点的检测 使用光学终点检测装置对抛光用的半导体晶片进行端点检测的光，也可以使用抛光垫。 本发明的化学机械抛光用窗构件具有至少部分透明地形成在基板部的至少一侧上的防污树脂层的基板部（由聚氨酯树脂等构成）。 该防污树脂层优选由在主链中具有聚硅氧烷链段的氟系聚合物构成。 抛光垫可以是窗构件装配在用于抛光垫（由聚氨酯树脂等构成的盘状，带状等）的通孔的通孔中，该基板设置有贯通孔 或者粘附到用于抛光垫的基板上，以覆盖通孔的开口部分。