公开(公告)号：US20240133949A1

公开(公告)日：2024-04-25

申请号：US18376447

申请日：2023-10-03

Applicant: MEDIATEK INC.

Inventor： Yu-Lin Yang ,  Chin-Wei Lin ,  Po-Chao Tsao ,  Tung-Hsing Lee ,  Chia-Jung Ni ,  Chi-Ming Lee ,  Yi-Ju Ting

IPC: G01R31/28 ,  G06N20/00

CPC classification number: G01R31/2894 ,  G06N20/00

Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.

公开(公告)号：US09859356B2

公开(公告)日：2018-01-02

申请号：US15044121

申请日：2016-02-16

Applicant: MEDIATEK INC.

Inventor： Ming-Da Tsai ,  Tao-Yi Lee ,  Cheng-Chou Hung ,  Tung-Hsing Lee

IPC: H01L29/00 ,  H01L49/02 ,  H01L23/522

CPC classification number: H01L28/10 ,  H01L23/5227

Abstract: A semiconductor integrated circuit includes an inductor and a plurality of high permeability patterns. The inductor includes one conductive loop. The high permeability patterns are disposed adjacent to the conductive loop.

公开(公告)号：US20160351653A1

公开(公告)日：2016-12-01

申请号：US15044121

申请日：2016-02-16

Applicant: MEDIATEK INC.

Inventor： Ming-Da Tsai ,  Tao-Yi Lee ,  Cheng-Chou Hung ,  Tung-Hsing Lee

IPC: H01L49/02 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L28/10 ,  H01L23/5227

Abstract: A semiconductor integrated circuit includes an inductor and a plurality of high permeability patterns. The inductor includes one conductive loop. The high permeability patterns are disposed adjacent to the conductive loop.

Abstract translation: 半导体集成电路包括电感器和多个高磁导率图案。 电感器包括一个导电回路。 高导磁率图案设置在导电环路附近。

公开(公告)号：US09324705B2

公开(公告)日：2016-04-26

申请号：US14161611

申请日：2014-01-22

Applicant: MEDIATEK INC.

Inventor： Ching-Chung Ko ,  Tung-Hsing Lee

IPC: H01L29/735 ,  H01L29/66 ,  H01L27/06 ,  H01L21/8249 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L27/0623 ,  H01L21/8249 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0821 ,  H01L29/6625 ,  H01L29/735

Abstract: A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; and a collector region surrounding the base region; wherein the portion of the base region under the gate does not under go a threshold voltage implant process.

Abstract translation: 横向双极结晶体管包括发射极区域; 围绕发射极区域的基极区域; 设置在所述基部区域的至少一部分上的栅极; 以及围绕所述基底区域的收集器区域; 其中所述栅极下方的所述基极区域的所述部分未经过阈值电压注入工艺。

公开(公告)号：US08987851B2

公开(公告)日：2015-03-24

申请号：US13790060

申请日：2013-03-08

Applicant: MediaTek Inc.

Inventor： Ming-Tzong Yang ,  Cheng-Chou Hung ,  Tung-Hsing Lee ,  Wei-Che Huang ,  Yu-Hua Huang

IPC: H01L27/14 ,  H01L29/40 ,  H01L21/76 ,  H01L23/522 ,  H01L31/18 ,  H01L23/48 ,  H01L23/00

CPC classification number: H01L21/76898 ,  H01L21/02107 ,  H01L21/268 ,  H01L21/30625 ,  H01L23/481 ,  H01L23/5227 ,  H01L23/66 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L31/18 ,  H01L2223/6616 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/11 ,  H01L2924/12042 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: The invention provides a radio-frequency (RF) device package and a method for fabricating the same. An exemplary embodiment of a radio-frequency (RF) device package includes a base, wherein a radio-frequency (RF) device chip is mounted on the base. The RF device chip includes a semiconductor substrate having a front side and a back side. A radio-frequency (RF) component is disposed on the front side of the semiconductor substrate. An interconnect structure is disposed on the RF component, wherein the interconnect structure is electrically connected to the RF component, and a thickness of the semiconductor substrate is less than that of the interconnect structure. A through hole is formed through the semiconductor substrate from the back side of the semiconductor substrate, and is connected to the interconnect structure. A TSV structure is disposed in the through hole.

Abstract translation: 本发明提供一种射频（RF）器件封装及其制造方法。 射频（RF）器件封装的示例性实施例包括基座，其中射频（RF）器件芯片安装在基座上。 RF器件芯片包括具有前侧和后侧的半导体衬底。 射频（RF）部件设置在半导体衬底的前侧。 互连结构设置在RF部件上，其中互连结构电连接到RF部件，并且半导体衬底的厚度小于互连结构的厚度。 从半导体衬底的背面穿过半导体衬底形成一个通孔，并连接到互连结构。 TSV结构设置在通孔中。