FEATURE DIMENSION DEVIATION CORRECTION SYSTEM, METHOD AND PROGRAM PRODUCT
    22.
    发明申请
    FEATURE DIMENSION DEVIATION CORRECTION SYSTEM, METHOD AND PROGRAM PRODUCT 有权
    特征尺寸偏差校正系统,方法和程序产品

    公开(公告)号:US20060007453A1

    公开(公告)日:2006-01-12

    申请号:US10710447

    申请日:2004-07-12

    CPC classification number: H01L22/20

    Abstract: A system, method and program product for correcting a deviation of a dimension of a feature from a target in a semiconductor process, are disclosed. The invention determines an origin of a deviation in a feature dimension from a target dimension regardless of whether it is based on processing or metrology. Adjustments for wafer processing variation of previous process tools can be fed forward, and adjustments for the process and/or integrated metrology tools may be fed back automatically during the processing of semiconductor wafers. The invention implements process reference wafers to determine the origin in one mode, and measurement reference wafers to determine the origin of deviations in another mode.

    Abstract translation: 公开了一种用于在半导体处理中校正特征尺寸与目标的偏差的系统,方法和程序产品。 本发明确定特征维度与目标维度的偏差的起源,而不管其是基于处理还是计量学。 可以向前馈送先前工艺工具的晶片处理变化的调整,并且可以在半导体晶片的处理期间自动地反馈过程和/或集成度量工具的调整。 本发明实施过程参考晶片以确定一种模式中的原点,以及测量参考晶片以确定另一种模式中偏差的起点。

    Ion energy analyzer
    23.
    发明授权
    Ion energy analyzer 有权
    离子能量分析仪

    公开(公告)号:US08847159B2

    公开(公告)日:2014-09-30

    申请号:US13433071

    申请日:2012-03-28

    CPC classification number: H01J37/32935 H01J49/488 H05H1/0081 Y10T29/49002

    Abstract: An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.

    Abstract translation: 一种用于确定等离子体的离子能量分布并包括入口格栅,选择栅格和离子收集器的离子能量分析器。 入口格栅包括尺寸小于等离子体的德拜长度的第一多个开口。 离子收集器通过第一电压源耦合到入口电网。 选择网格位于入口格栅和离子收集器之间,并通过第二电压源耦合到入口格栅。 离子电流计耦合到离子收集器以测量离子收集器上的离子通量并传输与其相关的信号。

    PROCESSING CHAMBER INTEGRATED PRESSURE CONTROL
    24.
    发明申请
    PROCESSING CHAMBER INTEGRATED PRESSURE CONTROL 有权
    加工室综合压力控制

    公开(公告)号:US20130115110A1

    公开(公告)日:2013-05-09

    申请号:US13606689

    申请日:2012-09-07

    Abstract: An apparatus and method for controlling pumping characteristics within a semiconductor processing chamber are provided. The apparatus includes levitation of a hollow shaft turbo pump or pump elements, and is configured to control pumping by including adjustments for orientation, position, geometries, and other aspects of the turbo pump. The method includes adjusting design and operational parameters, to control pumping characteristics within the processing chamber.

    Abstract translation: 提供一种用于控制半导体处理室内的泵浦特性的装置和方法。 该装置包括悬挂空心轴涡轮泵或泵元件,并且构造成通过包括对涡轮泵的取向,位置,几何形状和其它方面的调整来控制泵送。 该方法包括调整设计和操作参数,以控制处理室内的泵送特性。

    ION ENERGY ANALYZER AND METHODS OF MANUFACTURING THE SAME
    25.
    发明申请
    ION ENERGY ANALYZER AND METHODS OF MANUFACTURING THE SAME 有权
    离子能分析仪及其制造方法

    公开(公告)号:US20120248311A1

    公开(公告)日:2012-10-04

    申请号:US13433088

    申请日:2012-03-28

    CPC classification number: H01J37/32935 H01J49/488 H05H1/0081 Y10T29/49002

    Abstract: A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

    Abstract translation: 制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。 处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。 处理第三衬底以形成其中具有第三通道的离子收集器。 入口栅格可操作地耦合到选择栅格并与之电隔离,所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

    Method and system for introducing process fluid through a chamber component
    26.
    发明授权
    Method and system for introducing process fluid through a chamber component 失效
    通过腔室部件引入工艺流体的方法和系统

    公开(公告)号:US08276540B2

    公开(公告)日:2012-10-02

    申请号:US13343877

    申请日:2012-01-05

    CPC classification number: H01L21/67069 H01J37/32192 H01J37/3244

    Abstract: A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.

    Abstract translation: 描述了一种通过处理系统中的腔室部件引入过程流体的方法和系统。 腔室部件包括腔室元件,腔室元件具有在腔室元件的供应侧上的第一表面和腔室元件的过程侧上的第二表面,其中处理侧与供给侧相对。 此外,腔室部件包括从供应侧延伸穿过腔室元件到管道侧的管道,其中管道包括被配置为接收过程流体的入口和被配置为分配过程流体的出口。

    Method and system for performing a chemical oxide removal process
    27.
    发明授权
    Method and system for performing a chemical oxide removal process 有权
    用于进行化学氧化物去除工艺的方法和系统

    公开(公告)号:US08175736B2

    公开(公告)日:2012-05-08

    申请号:US12964531

    申请日:2010-12-09

    Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

    Abstract translation: 提出了一种用于化学氧化物去除(COR)的处理系统和方法,其中处理系统包括第一处理室和第二处理室,其中第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下,将基底暴露于气态化学物质,例如HF / NH 3。 第二处理室包括热处理室,其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。

    Switchable Neutral Beam Source
    28.
    发明申请
    Switchable Neutral Beam Source 审中-公开
    可切换中性光源

    公开(公告)号:US20110177694A1

    公开(公告)日:2011-07-21

    申请号:US12688721

    申请日:2010-01-15

    Abstract: The invention can provide apparatus and methods of processing a substrate in real-time using a switchable quasi-neutral beam system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used in an etch procedure to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

    Abstract translation: 本发明可以提供使用可切换的准中性束系统实时地处理衬底以提高光致抗蚀剂层的耐蚀刻性的装置和方法。 此外,改进的光致抗蚀剂层可以用于蚀刻过程中以更准确地控制栅极和/或间隔物临界尺寸(CD),以控制栅极和/或间隔区CD均匀性,并且消除线边缘粗糙度(LER)和线 宽度粗糙度(LWR)。

    Plasma Generation Controlled by Gravity-Induced Gas-Diffusion Separation (GIGDS) Techniques
    30.
    发明申请
    Plasma Generation Controlled by Gravity-Induced Gas-Diffusion Separation (GIGDS) Techniques 有权
    通过重力诱导气体扩散分离(GIGDS)技术控制的等离子体发生

    公开(公告)号:US20110039355A1

    公开(公告)日:2011-02-17

    申请号:US12853771

    申请日:2010-08-10

    Abstract: The invention can provide apparatus and methods of processing a substrate using plasma generation by gravity-induced gas-diffusion separation techniques. By adding or using gases including inert and process gases with different gravities (i.e., ratio between the molecular weight of a gaseous constituent and a reference molecular weight), a two-zone or multiple-zone plasma can be formed, in which one kind of gas can be highly constrained near a plasma generation region and another kind of gas can be largely separated from the aforementioned gas due to differential gravity induced diffusion and is constrained more closer to a wafer process region than the aforementioned gas.

    Abstract translation: 本发明可以提供使用通过重力引起的气体扩散分离技术的等离子体生成来处理衬底的装置和方法。 通过添加或使用气体,包括不同重量的惰性气体和工艺气体(即气态成分的分子量与参考分子量之间的比例),可以形成两区或多区等离子体,其中一种 气体可以在等离子体产生区域附近被高度约束,并且由于差分重力感应扩散,另一种气体可以与上述气体大大分离,并且比上述气体更受限于更接近于晶片工艺区域。

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