公开(公告)号：US07466585B2

公开(公告)日：2008-12-16

申请号：US11380777

申请日：2006-04-28

申请人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

发明人： Chih-Huo Wu ,  Chih-Huang Lai ,  Yu-Jen Wang ,  Denny Tang

IPC分类号： G11C11/14

CPC分类号： G11C11/16 ,  G11C29/50 ,  G11C2029/5002

摘要： An apparatus and methods for a non-volatile magnetic random access memory (MRAM) device that includes a word line, a bit line, and a magnetic thin film memory element located at an intersection of the word and bit lines. The magnetic thin film memory element includes an alloy of a rare earth element and a transition metal element. The word line is operable to heat the magnetic thin film memory element when a heating current is applied. Heating of the magnetic thin film memory element to a predetermined temperature reduces its coercivity, which allows switching of the magnetic state upon application of a magnetic field. The magnetic state of the thin film element can be determined in accordance with principles of the Hall effect.

摘要翻译： 一种用于非易失磁性随机存取存储器（MRAM）器件的装置和方法，其包括位于字线和位线的交叉点处的字线，位线和磁薄膜存储元件。 磁性薄膜存储元件包括稀土元素和过渡金属元素的合金。 当施加加热电流时，字线可操作以加热磁性薄膜存储元件。 将磁性薄膜存储元件加热到预定温度降低其矫顽力，这允许在施加磁场时磁性转换。 薄膜元件的磁状态可以根据霍尔效应的原理来确定。

公开(公告)号：US20080230531A1

公开(公告)日：2008-09-25

申请号：US11845626

申请日：2007-08-27

申请人： CHIH-MING CHOU ,  Yu-Jen Wang ,  Chao-Yung Wang ,  Yu-Ping Lin ,  Chen-Ping Su

发明人： CHIH-MING CHOU ,  Yu-Jen Wang ,  Chao-Yung Wang ,  Yu-Ping Lin ,  Chen-Ping Su

IPC分类号： H05B3/20

CPC分类号： H05B3/22 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/7825 ,  H01L2224/78703 ,  H01L2224/78744 ,  H01L2224/85 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H05K9/0067 ,  H01L2924/00014

摘要： A heat block for holding an electronic device is disclosed. The heat block comprises a base and at least one discharge device. The discharge device is disposed on the base. The discharge device is electrically conductive and is grounded. When the electronic device is placed on the base, the discharge device is in contact with an electrical contact of the electronic device.

摘要翻译： 公开了一种用于保持电子设备的热块。 加热块包括底座和至少一个排出装置。 放电装置设置在基座上。 放电装置导电并接地。 当电子装置放置在基座上时，放电装置与电子装置的电接点相接触。

公开(公告)号：US07312506B2

公开(公告)日：2007-12-25

申请号：US11093652

申请日：2005-03-30

申请人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

发明人： Yu-Jen Wang ,  Chih-Huang Lai ,  Denny Tang ,  Wen Chin Lin

IPC分类号： H01L29/82

CPC分类号： G11C11/16

摘要： A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic layer. The first and second easy axes are 90 degree twisted-coupled with the first easy axis parallel to the length of the first conductive line and the second easy axis perpendicular to the length of the first conductive line. A storage device is adjacent to the first conductive line, receiving a magnetic field generated from a current flowing through the first conductive line.

摘要翻译： 存储单元结构。 第一导线由分别具有第一容易轴和第二容易轴的至少两个第一铁磁层，位于第一铁磁层之间的纳米氧化物层和第一固定铁磁层包层。 第一和第二容易轴与第一容易轴90度扭转耦合，平行于第一导电线的长度，第二容易轴垂直于第一导线的长度。 存储装置与第一导线相邻，接收从流经第一导线的电流产生的磁场。

公开(公告)号：US20070247784A1

公开(公告)日：2007-10-25

申请号：US11379478

申请日：2006-04-20

申请人： Yu-Jen Wang ,  Hsing-Lien Lin ,  Yeur-Luen Tu

发明人： Yu-Jen Wang ,  Hsing-Lien Lin ,  Yeur-Luen Tu

IPC分类号： H01G4/06

CPC分类号： H01G4/10 ,  H01G4/005 ,  H01G4/12 ,  H01G4/33 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein are new MIM structures having increased capacitance with little or no tunneling current, and related methods of manufacturing the same. In one embodiment, the new MIM structure comprises a first electrode comprising a magnetic metal and having a magnetic moment aligned in a first direction, and a second electrode comprising a magnetic metal and having a magnetic moment aligned in a second direction antiparallel to the first direction. In addition, such an MIM structure comprises a dielectric layer formed between the first and second electrodes and contacting the first and second magnetic metals.

摘要翻译： 这里公开了具有增加的电容，很少或没有隧道电流的新的MIM结构，以及相关的制造方法。 在一个实施例中，新的MIM结构包括包括磁性金属并且具有在第一方向上对准的磁矩的第一电极和包括磁性金属的第二电极，并且具有在与第一方向相反的第二方向上对准的磁矩 。 此外，这种MIM结构包括形成在第一和第二电极之间并与第一和第二磁性金属接触的电介质层。

公开(公告)号：US20060075891A1

公开(公告)日：2006-04-13

申请号：US10962039

申请日：2004-10-08

申请人： Yu-Jen Wang

发明人： Yu-Jen Wang

IPC分类号： F15B13/04

CPC分类号： F15B15/202 ,  B29C45/14344 ,  F15B15/1428 ,  F15B2215/305

摘要： A telescopic pneumatic device comprises an outer cylinder, an inner cylinder disposed in the outer cylinder and having a cylinder wall defining an air chamber, a piston mounted in the air chamber and having a piston rod connected thereto, a flow passage provided between the cylinder wall and the outer cylinder, and a control valve operable to permit or interrupt fluid communication between the flow passage and the air chamber. The inner cylinder is made of a rigid plastic material and includes a valve mounting part for receiving the control valve, the valve mounting part being formed in one piece with the cylinder wall.

公开(公告)号：US20050177975A1

公开(公告)日：2005-08-18

申请号：US10779488

申请日：2004-02-13

申请人： Yu-Jen Wang

发明人： Yu-Jen Wang

IPC分类号： E05F1/12 ,  E05F3/04 ,  E05F3/10

CPC分类号： E05F3/225 ,  E05F1/1292 ,  E05F3/04 ,  E05F3/104 ,  E05Y2201/11 ,  E05Y2201/638 ,  E05Y2201/702 ,  E05Y2600/20 ,  E05Y2800/00 ,  E05Y2900/132 ,  Y10S16/09 ,  Y10T16/2769 ,  Y10T16/2796 ,  Y10T16/540253 ,  Y10T16/56

摘要： A door closer includes a closer casing, a pivot unit, and a length-variable damping cylinder. The pivot unit includes a pivot axle, a cam member, and a cam follower member. The pivot axle has a drive end portion that extends into and that is retained rotatably in the closer casing, and a coupling end portion that extends out of the closer casing. The cam member is mounted co-rotatably on the drive end portion of the pivot axle. The cam follower member is disposed in the closer casing, and is acted upon by the cam member. The damping cylinder is disposed in the closer casing, and has one end coupled to the cam follower member and an opposite end anchored to the closer casing.

摘要翻译： 门关闭器包括更靠近的外壳，枢轴单元和长度可变的阻尼缸。 枢轴单元包括枢转轴，凸轮构件和凸轮从动构件。 枢轴具有一个驱动端部分，该驱动端部分延伸到可更靠近的壳体中并且可旋转地保持在其中，并且该连接端部从较近的壳体延伸出来。 凸轮构件可共旋转地安装在枢转轴的驱动端部上。 凸轮从动构件设置在更靠近的壳体中，并被凸轮构件作用。 阻尼筒设置在更靠近的壳体中，并且一端联接到凸轮从动构件，并且相对端锚固到更靠近的壳体。

公开(公告)号：US09636603B2

公开(公告)日：2017-05-02

申请号：US14876829

申请日：2015-10-07

申请人： Yu-Jen Wang

发明人： Yu-Jen Wang

IPC分类号： A63H37/00 ,  F41B11/24 ,  F41B11/66

CPC分类号： A63H37/00 ,  F41B11/66

摘要： A hand-held cracker snap for spraying projectile includes a main unit, a button, a disk, an air cylinder and a nozzle. The button is loosely disposed in the main unit. The disk is disposed in the main unit and is connected to the button. The air cylinder is disposed in the main unit and is provided with a central tube that can be extended or compressed along an axis repeatedly to suck or squeeze air to or from the air cylinder. The nozzle is a tubular element in the connecting pipe. An end of the nozzle is connected to the interior part of the air cylinder, allowing air to enter or exit the air cylinder via the nozzle. The nozzle guides air into the bullet.

公开(公告)号：US09277167B2

公开(公告)日：2016-03-01

申请号：US13337453

申请日：2011-12-27

申请人： Yu-Jen Wang ,  Chung-Yi Chen

发明人： Yu-Jen Wang ,  Chung-Yi Chen

IPC分类号： H04N7/12 ,  H04N11/02 ,  H04N11/04 ,  H04N7/01

CPC分类号： H04N7/012 ,  H04N7/014

摘要： A motion compensation de-interlacing image processing apparatus is provided. The apparatus includes a motion compensation module, a still compensation module, a motion detection module, and a de-interlacing blending module. The motion compensation module generates a motion compensation pixel according to at least one of a current field, a previous field, and a next field of a target pixel to be interpolated. The still compensation module generates a still compensation pixel according to the previous field and the next field of the target pixel. The motion detection module determines a motion index according to the previous field and the next field of the target pixel. The de-interlacing blending module generates the target pixel by weighted averaging the motion compensation pixel and the still compensation pixel according to the motion index.

摘要翻译： 提供一种运动补偿去隔行图像处理装置。 该装置包括运动补偿模块，静止补偿模块，运动检测模块和去隔行混合模块。 运动补偿模块根据要内插的目标像素的当前场，先前场和下一场中的至少一个产生运动补偿像素。 静止补偿模块根据目标像素的前一场和下一场产生静止补偿像素。 运动检测模块根据目标像素的前一场和下一个场来确定运动索引。 去隔行混合模块通过根据运动索引对运动补偿像素和静止补偿像素进行加权平均来生成目标像素。

公开(公告)号：US08871365B2

公开(公告)日：2014-10-28

申请号：US13406972

申请日：2012-02-28

申请人： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

发明人： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

IPC分类号： H01F10/32 ,  G01R33/09 ,  G11C11/15 ,  G11B5/39

CPC分类号： H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

摘要： Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.

摘要翻译： 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

公开(公告)号：US08860156B2

公开(公告)日：2014-10-14

申请号：US13609780

申请日：2012-09-11

申请人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

发明人： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC分类号： H01L29/82

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L27/224 ,  H01L29/82 ,  H01L43/10

摘要： A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.

摘要翻译： 公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。