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21.发明申请Optical waveguide device, coherent light source using the same and optical apparatus having same 有权光波导器件，使用其的相干光源和具有该光波导器件的光学装置公开(公告)号：US20060257084A1
公开(公告)日：2006-11-16
申请号：US10542299
申请日：2003-12-22
IPC分类号： G02B6/00
CPC分类号： G02F1/3558 , G02F1/3775 , G02F2201/30
摘要： An optical waveguide device has a substrate composed of a nonlinear optical material and a periodically domain-inverted structure having the same composition as the nonlinear optical material, where the domain-inverted structure has a refractive index distribution relying on the domain-inverted structure.
摘要翻译： 光波导器件具有由非线性光学材料构成的基板和具有与非线性光学材料相同组成的周期性畴反转结构，其中畴反转结构具有依赖畴反转结构的折射率分布。
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22.发明申请Optical waveguide device, optical waveguide laser using the same and optical apparatus having same 有权光波导器件，使用其的光波导激光器和具有该光波导器件的光学器件公开(公告)号：US20060109542A1
公开(公告)日：2006-05-25
申请号：US10542424
申请日：2003-12-22
IPC分类号： G02F2/02
CPC分类号： G02F1/3775 , G02F1/3558 , G02F1/365 , G02F2201/063
摘要： An optical waveguide device includes a waveguide layer that converts a wavelength of incident light and emits converted light. In the waveguide layer, a ridge waveguide and slab waveguides are provided, the slab waveguides being formed on both sides of the ridge waveguide with recess portions intervening therebetween. The waveguide layer satisfies a multi-mode condition for the incident light, and light propagating through the ridge waveguide is in a single mode.
摘要翻译： 光波导器件包括：转换入射光的波长并发射转换的光的波导层。 在波导层中，设置脊波导和平板波导，平坦波导形成在脊状波导的两侧，凹槽部分插入其间。 波导层满足入射光的多模态，通过脊波导传播的光处于单一模式。
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23.发明授权公开(公告)号：US06654529B1
公开(公告)日：2003-11-25
申请号：US09375132
申请日：1999-08-16
申请人： Tatsuo Kawaguchi , Minoru Imaeda
发明人： Tatsuo Kawaguchi , Minoru Imaeda
IPC分类号： G02B600
CPC分类号： G02F1/3558 , G02F1/365 , G02F1/3775
摘要： A method for producing an optical waveguide part includes the steps of preparing a ferroelectric single crystalline substrate having a polarization-axis substantially parallel to a main surface thereof and having a given ferroelectric domain-inverted pattern, and epitaxially growing a ferroelectric single crystalline film on the ferroelectric single crystalline substrate. The ferroelectric domain-inverted pattern is thereby transcribed from the substrate into the ferroelectric single crystalline film to form a ferroelectric domain-inverted structure therein.
摘要翻译： 一种制造光波导部件的方法包括以下步骤：制备具有基本上平行于其主表面并且具有给定的铁电畴反转图案的偏振轴的铁电单晶基板，并且在其上外延生长铁电单晶膜 铁电单晶基板。 因此，铁电畴反转图案从基板转印成铁电单晶膜，在其中形成铁电畴畴反转结构。
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24.发明授权Optical waveguide elements, optical wavelength conversion elements, and process for producing optical waveguide elements 有权光波导元件，光波长转换元件以及用于制造光波导元件的工艺公开(公告)号：US06631231B2
公开(公告)日：2003-10-07
申请号：US09810516
申请日：2001-03-16
申请人： Kiminori Mizuuchi , Kazuhisa Yamamoto , Tatsuo Kawaguchi , Takashi Yoshino , Minoru Imaeda , Kenji Aoki , Osamu Mitomi
发明人： Kiminori Mizuuchi , Kazuhisa Yamamoto , Tatsuo Kawaguchi , Takashi Yoshino , Minoru Imaeda , Kenji Aoki , Osamu Mitomi
IPC分类号： G02B600
CPC分类号： G02F1/3775 , G02F1/3525 , G02F2201/07
摘要： An optical waveguide element includes a three-dimensional optical waveguide of a bulky non-linear optical crystal, a substrate, and a joining layer made of an amorphous material. The substrate is joined to the optical waveguide via the joining layer.
摘要翻译： 光波导元件包括笨重的非线性光学晶体的三维光波导，基板和由非晶材料制成的接合层。 基板经由接合层与光波导接合。
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25.发明授权
公开(公告)号：US6117346A
公开(公告)日：2000-09-12
申请号：US33733
申请日：1998-03-03
申请人： Tatsuo Kawaguchi , Minoru Imaeda
发明人： Tatsuo Kawaguchi , Minoru Imaeda
CPC分类号： G02F1/3558 , C30B29/30 , C30B33/00
摘要： A process for forming a microstructure at a surface of a substrate made of a ferroelectric single crystal, includes the steps of subjecting the substrate to a single-poling treatment, thereby one of an etching-easy surface and an etching-difficult surface being exposed to one of main faces of the substrate, while the other being exposed to the other main face, forming a domain-inverted region in at least one of the main faces of the substrate, and forming the microstructure at the substrate in the domain-inverted region of the substrate by selectively etching the substrate.
摘要翻译： 在由铁电单晶构成的基板的表面形成微结构的工艺包括以下步骤：使基板进行单极处理，从而将易蚀刻的表面和难蚀刻的表面中的一个暴露于 基板的主面之一，另一方面暴露于另一主面，在基板的至少一个主面上形成畴反转区域，并在畴反转区域的基板上形成微观结构 通过选择性蚀刻衬底。
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公开(公告)号：US5517942A
公开(公告)日：1996-05-21
申请号：US408390
申请日：1995-03-22
申请人： Tsuguo Fukuda , Yasunori Okano , Tatsuo Kawaguchi , Minoru Imaeda
发明人： Tsuguo Fukuda , Yasunori Okano , Tatsuo Kawaguchi , Minoru Imaeda
摘要： A process for producing optoelectric articles, in which an optoelectric single crystal film is formed on an optoelectric single crystal substrate, is disclosed. The optoelectric single crystal substrate is exposed to a liquid phase in a supercooling state of a melt including a solute and a melting medium, and the optoelectric single crystal film is formed by a liquid phase epitaxial process. In this case, a viscosity of the liquid phase is set to 75%.about.95% preferably 75%.about.90% with respect to a viscosity at which a degree of supercooling of the liquid phase is zero.
摘要翻译： 公开了一种在光电单晶衬底上形成光电单晶膜的光电器件的制造方法。 将光电单晶基板暴露于包含溶质和熔融介质的熔融物的过冷状态的液相，通过液相外延工艺形成光电单晶膜。 在这种情况下，相对于液相的过冷度为零的粘度，液相的粘度被设定为75％差异95％，优选75％差异90％。
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公开(公告)号：US20100107969A1
公开(公告)日：2010-05-06
申请号：US12655826
申请日：2010-01-08
IPC分类号： C30B7/00
CPC分类号： C30B29/403 , C30B23/02 , C30B25/02 , C30B25/20 , C30B29/406
摘要： An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.
摘要翻译： 通过气相沉积在衬底1上形成III族氮化物的底层膜2。 将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2，从而使基底1的表面变粗糙。 通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。 通过助熔法在晶种膜4上生长III族氮化物单晶5。
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28.发明申请公开(公告)号：US20090246942A1
公开(公告)日：2009-10-01
申请号：US12411507
申请日：2009-03-26
申请人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
发明人： Minoru Imaeda , Yuichiro Imanishi , Takao Saito
IPC分类号： H01L21/20 , C23C16/503
CPC分类号： H01J37/32568 , C23C16/24 , C23C16/515 , C23C16/54 , C23C16/545 , H01J37/32018 , H01J37/32027 , H01J37/32045 , H01J37/3244
摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.
摘要翻译： 一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。 随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从 气体出口，从而将室中的压力控制在大于1kPa的压力。 然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。
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公开(公告)号：US06527851B2
公开(公告)日：2003-03-04
申请号：US09798750
申请日：2001-03-02
申请人： Katsuhiro Imai , Akihiko Honda , Minoru Imaeda
发明人： Katsuhiro Imai , Akihiko Honda , Minoru Imaeda
IPC分类号： C30B1508
摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.
摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。纤维晶种15与熔体18接触，然后通过降低晶种从坩埚7的开口13c向下拉。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。
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公开(公告)号：US06447606B2
公开(公告)日：2002-09-10
申请号：US09320335
申请日：1999-05-26
申请人： Minoru Imaeda , Takashi Yoshino
发明人： Minoru Imaeda , Takashi Yoshino
IPC分类号： C30B2812
CPC分类号： G02F1/377 , C30B23/02 , C30B29/30 , G02F1/3551 , G02F2201/307 , G02F2202/20 , Y10S117/904 , Y10S117/918
摘要： A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, including the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating the target to gasify molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.
摘要翻译： 一种由铌酸锂钾 - 钾酸钾固溶体的单晶制成的单晶膜或铌酸锂钾的单晶的方法，包括以下步骤：制备由单晶膜材料制成的靶 制备由铌酸锂钾锂铌酸钾固溶体的单晶或铌酸锂钾的单晶构成的基体，照射靶，通过解离和蒸发来气化构成靶的分子，并外延生长单晶 电影在基础上。
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