RESONATOR AND RESONANCE DEVICE
    22.
    发明申请

    公开(公告)号:US20210028763A1

    公开(公告)日:2021-01-28

    申请号:US17038519

    申请日:2020-09-30

    Abstract: A resonator includes a vibration portion that has a substrate having a main surface, a lower electrode on the main surface of the substrate, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film. A frame surrounds at least part of the vibration portion. Opening grooves having different widths in a first direction in a plan view of the main surface are provided in a periphery of the vibration portion. In a plan view of the main surface, the upper electrode is provided so as to be spaced from an outer edge of the substrate by a gap which is along the first direction, such that a length of the gap in a region where a width of the opening groove is large is larger than a length of the gap in a region where a width of the opening groove is small.

    RESONANCE DEVICE
    24.
    发明申请
    RESONANCE DEVICE 审中-公开

    公开(公告)号:US20190296712A1

    公开(公告)日:2019-09-26

    申请号:US16435729

    申请日:2019-06-10

    Abstract: A resonance device with improved precision of temperature control. The resonance device includes a platform; a resonator including a vibrator and one or more holding arms that connect the vibrator and the platform to each other such that a first groove is provided around the vibrator. Moreover, the resonance device includes a sensor with a measurement portion that measures temperature and a heater formed on the platform. A second groove is provided between the measurement portion and the heater.

    Vibrating device
    25.
    发明授权

    公开(公告)号:US10333052B2

    公开(公告)日:2019-06-25

    申请号:US15357218

    申请日:2016-11-21

    Inventor: Toshio Nishimura

    Abstract: A vibrating device includes a vibration plate that vibrates at a harmonic of a contour vibration and on which plural vibration members to are disposed. Moreover, support members are provided having first ends connected to the vibration plate and second ends connected to a frame base that surrounds the vibration plate. Cavities extending in a direction that intersects a direction in which the support members extend are formed in the base with flexure-vibration members formed therebetween. Both ends of the flexure-vibration members are joined to the base to serve as stationary ends. Moreover, a length between ends of the flexure-vibration members and a connected portion where each of the flexure-vibration member is connected to the corresponding support members is λ/4, where λ is a wave length of a flexural vibration corresponding to a frequency of a natural vibration in the vibration plate.

    RESONATOR AND RESONANCE DEVICE
    26.
    发明申请

    公开(公告)号:US20190074812A1

    公开(公告)日:2019-03-07

    申请号:US16174563

    申请日:2018-10-30

    Abstract: A resonator that includes a base and one or more vibration arms with fixed ends connected to a front end of the base and open ends extending therefrom. Moreover, the vibration arms include first and second electrodes and a piezoelectric film that is disposed therebetween. The resonator further includes a protective film disposed opposing an upper face of the piezoelectric film and sandwiching the first electrode and a temperature characteristics adjusting film formed of a material different from a material of the protective film and that is provided on the fixed end side relative to the center of the vibration arms such that part of the protective film is exposed to a surface.

    RESONATOR AND RESONANCE DEVICE
    27.
    发明申请

    公开(公告)号:US20180191330A1

    公开(公告)日:2018-07-05

    申请号:US15904975

    申请日:2018-02-26

    Abstract: A resonator that includes a piezoelectric vibrator, a frame, and a first node generator between the piezoelectric vibrator and the frame. Moreover, a first connecting arm connects the first node generator to the piezoelectric vibrator that opposes the first, and a first holding arm connects the first node generator to a part of the frame that opposes the first node generator. The first node generator includes a width extending in a second direction, which is orthogonal to a first direction of the first connecting arm, that is a maximum width where the first node generator is closer to the first connecting arm than a center of the first node generator relative to the first direction. Moreover, the width of the first node generator gradually decreases from the maximum width as the first node generator extends towards the first holding arm.

    RESONATOR
    28.
    发明申请
    RESONATOR 审中-公开

    公开(公告)号:US20180048284A1

    公开(公告)日:2018-02-15

    申请号:US15695505

    申请日:2017-09-05

    Abstract: A resonator including a vibrating portion with first and second electrodes and a piezoelectric film formed therebetween. Moreover, a frame surrounds the vibrating portion with a pair of holding units opposite to each other and connecting the vibrating portion with the frame. An extended electrode extends from the holder to the holding unit and either the first or second electrode extends to the holding unit, and is connected to the extended electrode. Furthermore, the resonator includes an electrical resistance value per unit area of the extended electrode that is smaller than an electrical resistance value per unit area of the first electrode or the second electrode that extends to the holding unit.

    Vibrating device
    29.
    发明授权

    公开(公告)号:US09866199B2

    公开(公告)日:2018-01-09

    申请号:US14937026

    申请日:2015-11-10

    CPC classification number: H03H9/21 H01L41/0478

    Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (−0.0002x2−0.0136x+0.0014)±0.05.

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