公开(公告)号：US20170264266A1

公开(公告)日：2017-09-14

申请号：US15604738

申请日：2017-05-25

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO

IPC: H03H9/25 ,  H03H9/02 ,  H03H3/08

CPC classification number: H03H9/25 ,  H03H3/08 ,  H03H9/02984 ,  H03H9/1085

Abstract: An acoustic wave device that utilizes a plate wave includes a recess in an upper surface of a support substrate. A piezoelectric substrate is located on the support substrate with a first principal surface side facing the support substrate. An IDT electrode is provided on the first principal surface of the piezoelectric substrate. The recess defines a cavity that is surrounded by the support substrate and the first principal surface of the piezoelectric substrate. The IDT electrode faces the cavity. The piezoelectric substrate includes through-holes that communicate the cavity and the second principal surface with each other. Sealing materials are filled respectively in the through-holes.

公开(公告)号：US20170149405A1

公开(公告)日：2017-05-25

申请号：US15396840

申请日：2017-01-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO

IPC: H03H3/02 ,  H03H9/25

CPC classification number: H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/173 ,  H03H9/25 ,  H03H2003/021

Abstract: In a piezoelectric resonator manufacturing method, a sacrificial layer is formed on a back surface of a piezoelectric substrate. A support layer is formed on the back surface of the piezoelectric substrate so as to cover the sacrificial layer. A support layer as a piezoelectric resonator is formed by flattening the support layer. A recess in which the surface of the sacrificial layer is recessed with respect to the surface of the support layer is formed by abrading the surfaces of the support layer and the sacrificial layer. The recess extends to a vicinity of a boundary surface between the support layer and the sacrificial layer in the support layer. A support substrate is adhered to the surfaces of the support layer including the recess and the sacrificial layer via an adhesive material.

公开(公告)号：US20230387879A1

公开(公告)日：2023-11-30

申请号：US18319505

申请日：2023-05-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO ,  Masashi OMURA

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/17

CPC classification number: H03H9/02015 ,  H03H3/02 ,  H03H9/173

Abstract: An acoustic wave device includes an intermediate film, a piezoelectric film 4, and a first electrode, which are laminated in this order on a support substrate. A void portion is provided to overlap at least a part of the first electrode on the side of a second main surface of the piezoelectric film in plan view from the side of a first main surface. A groove portion is also provided to pass through at least a part of the piezoelectric film but not reach the void portion.

公开(公告)号：US20230261639A1

公开(公告)日：2023-08-17

申请号：US18136373

申请日：2023-04-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tetsuya KIMURA ,  Shintaro KUBO ,  Yutaka KISHIMOTO ,  Masashi OMURA ,  Hajime YAMADA

IPC: H03H9/25 ,  H03H3/02 ,  H03H9/02 ,  H03H9/145 ,  H03H9/17

CPC classification number: H03H9/25 ,  H03H3/02 ,  H03H9/02574 ,  H03H9/14541 ,  H03H9/02559 ,  H03H9/173

Abstract: An acoustic wave device includes a support substrate, a dielectric film, a piezoelectric layer, and an excitation electrode. The piezoelectric layer includes first and second main surfaces. The second main surface is on a side including the dielectric film. A cavity portion is provided in the dielectric film and overlaps at least a portion of the excitation electrode in plan view. The dielectric film includes a side wall surface facing the cavity portion and including an inclined portion inclined so that a width of the cavity portion decreases with increasing distance away from the piezoelectric layer. The inclined portion includes at least an end portion on a side including the piezoelectric layer, in the side wall surface. When an angle between the inclined portion and the second main surface of the piezoelectric layer is defined as an inclination angle α, the inclination angle α is from about 40° to about 80° inclusive.

公开(公告)号：US20220384708A1

公开(公告)日：2022-12-01

申请号：US17883742

申请日：2022-08-09

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO ,  Shinsuke IKEUCHI

IPC: H01L41/083 ,  H01L41/047 ,  H01L41/187

Abstract: In a piezoelectric device, a layered portion includes, at a position at least above a recess, a single crystal piezoelectric layer and a pair of electrode layers to apply voltage to the single crystal piezoelectric layer. At least a portion of the pair of electrode layers includes a lower electrode layer extending along a surface of the single crystal piezoelectric layer, the surface being closer to a base. The lower electrode layer is present only inside the recess.

公开(公告)号：US20220209098A1

公开(公告)日：2022-06-30

申请号：US17694730

申请日：2022-03-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO ,  Shinsuke IKEUCHI ,  Masayuki SUZUKI ,  Fumiya KUROKAWA

IPC: H01L41/09 ,  H01L41/047 ,  H01L41/187 ,  H01L41/29 ,  H01L41/332

Abstract: A piezoelectric element includes a piezoelectric layer, a first electrode layer, a second electrode layer, and a connecting electrode. The piezoelectric layer includes first and second surfaces, and a through-hole. The second electrode layer is adjacent to the second surface of the piezoelectric layer. The second electrode layer faces the through-hole. The second electrode layer includes silicon as a major component. The connecting electrode is on a connecting surface of the second electrode layer, and the connecting surface faces the through-hole. The connecting electrode is made of a metal. A surface roughness of the connecting surface is greater than a surface roughness of a major surface. The major surface is a portion, other than the connecting surface, of a surface of the second electrode layer, and the surface is adjacent to the piezoelectric layer.

公开(公告)号：US20220209095A1

公开(公告)日：2022-06-30

申请号：US17694729

申请日：2022-03-15

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shinsuke IKEUCHI ,  Masato KOBAYASHI ,  Masayuki SUZUKI ,  Fumiya KUROKAWA ,  Yutaka KISHIMOTO ,  Hajime YAMADA

IPC: H01L41/047 ,  H01L41/053 ,  H01L41/29 ,  H01L41/312 ,  H01L41/187

Abstract: A piezoelectric element includes a piezoelectric layer, a first electrode layer, and a second electrode layer. The piezoelectric layer includes first and second surfaces opposed to each other. The first electrode layer is located on the first surface. The second electrode layer is located on the second surface. At least a portion of the second electrode layer faces the first electrode layer with the piezoelectric layer interposed therebetween. The second electrode layer mainly includes silicon. The piezoelectric layer is monocrystalline.

公开(公告)号：US20200168785A1

公开(公告)日：2020-05-28

申请号：US16777925

申请日：2020-01-31

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shinsuke IKEUCHI ,  Tetsuya KIMURA ,  Katsumi FUJIMOTO ,  Yutaka KISHIMOTO ,  Fumiya KUROKAWA ,  Yuzo KISHI

IPC: H01L41/047 ,  H01L41/297 ,  H01L41/08 ,  H01L41/09 ,  H01L41/083 ,  H01L41/053

Abstract: A piezoelectric device includes a piezoelectric body at least a portion of which can bend and vibrate, an upper electrode on an upper surface of the piezoelectric body and in which distortion of a crystal lattice is reduced as a distance from the upper surface of the piezoelectric body increases, a lower electrode on a lower surface of the piezoelectric body and in which distortion of a crystal lattice is reduced as a distance from the upper surface of the piezoelectric body increases, and a support substrate below the piezoelectric body, in which a recess extending from a lower surface of the support substrate toward the lower surface of the piezoelectric device is provided.

公开(公告)号：US20180205362A1

公开(公告)日：2018-07-19

申请号：US15922961

申请日：2018-03-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO ,  Masashi OMURA ,  Tetsuya KIMURA

IPC: H03H9/02 ,  H03H9/05 ,  H03H9/145 ,  H03H9/25 ,  H03H3/08

CPC classification number: H03H9/02929 ,  H01L41/0477 ,  H01L41/29 ,  H01L41/312 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/02559 ,  H03H9/02637 ,  H03H9/0561 ,  H03H9/058 ,  H03H9/145 ,  H03H9/175 ,  H03H9/25 ,  H03H2003/025

Abstract: An elastic wave device includes a supporting substrate, an acoustic multilayer film on the supporting substrate, a piezoelectric substrate on the acoustic multilayer film, and an IDT electrode on the piezoelectric substrate. The acoustic multilayer film includes at least four acoustic impedance layers. The at least four acoustic impedance layers include at least one low acoustic impedance layer and at least one high acoustic impedance layer having an acoustic impedance higher than the low acoustic impedance layer. The elastic wave device further includes a bonding layer provided at any position in a range of from inside the acoustic impedance layer, which is the fourth acoustic impedance layer from the piezoelectric substrate side towards the supporting substrate side, to an interface between the acoustic multilayer film and the supporting substrate.

公开(公告)号：US20170366163A1

公开(公告)日：2017-12-21

申请号：US15679324

申请日：2017-08-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yutaka KISHIMOTO

IPC: H03H9/25 ,  H03H9/17 ,  H03H9/145 ,  H01L41/338 ,  H03H3/10 ,  H03H3/04 ,  H03H9/05 ,  H03H9/13 ,  H03H3/02

CPC classification number: H03H9/25 ,  H01L41/338 ,  H03H3/02 ,  H03H3/04 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02897 ,  H03H9/0504 ,  H03H9/0561 ,  H03H9/058 ,  H03H9/13 ,  H03H9/145 ,  H03H9/175 ,  H03H2003/025

Abstract: An elastic wave device includes a piezoelectric layer including a first main surface and a second main surface facing the first main surface, an acoustically reflective layer stacked on the first main surface of the piezoelectric layer, an excitation electrode disposed on the piezoelectric layer, and a support layer. The acoustically reflective layer overlaps at least the excitation electrode in a plan view of the piezoelectric layer from the side of the second main surface. The support layer surrounds the acoustically reflective layer in a plan view of the piezoelectric layer from the side of the second main surface.