High purity germanium detector
    21.
    发明授权
    High purity germanium detector 有权
    高纯锗探测器

    公开(公告)号:US09261610B2

    公开(公告)日:2016-02-16

    申请号:US14574848

    申请日:2014-12-18

    CPC classification number: G01T1/244 G01T1/24 G01T1/241 G01T1/366

    Abstract: The present disclosure provides a High-Purity Germanium (HPGe) detector, comprising: a HPGe single crystal having an intrinsic region exposed surface; a first electrode and a second electrode connected to a first contact electrode and a second contact electrode of the HPGe single crystal respectively; and a conductive guard ring arranged in the intrinsic region exposed surface around the first electrode to separate the intrinsic region exposed surface into an inner region and an outer region. A leakage current derived from the intrinsic region exposed surface of the HPGe detector can be separated from the current of the HPGe detector by the conductive guard ring provided in the surface, thereby suppressing the interference of the surface leakage current.

    Abstract translation: 本公开提供了一种高纯锗(HPGe)检测器,包括:具有固有区域暴露表面的HPGe单晶; 分别连接到HPGe单晶的第一接触电极和第二接触电极的第一电极和第二电极; 以及布置在第一电极周围的本征区域暴露表面中的导电保护环,以将本征区域暴露表面分离成内部区域和外部区域。 从HPGe检测器的本征区域暴露表面导出的泄漏电流可以通过设置在表面中的导电保护环与HPGe检测器的电流分离,从而抑制表面泄漏电流的干扰。

    MILLIMETER WAVE THREE DIMENSIONAL HOLOGRAPHIC SCAN IMAGING APPARATUS AND METHOD FOR INSPECTING A HUMAN BODY OR AN ARTICLE
    22.
    发明申请
    MILLIMETER WAVE THREE DIMENSIONAL HOLOGRAPHIC SCAN IMAGING APPARATUS AND METHOD FOR INSPECTING A HUMAN BODY OR AN ARTICLE 审中-公开
    三维波三维全息扫描成像装置和检查人体或文章的方法

    公开(公告)号:US20150323664A1

    公开(公告)日:2015-11-12

    申请号:US14451297

    申请日:2014-08-04

    CPC classification number: G01S13/89 G01S13/02 G01V8/005

    Abstract: A millimeter wave three dimensional holographic scan imaging apparatus and a method for inspecting a human body or an article are disclosed. In one aspect, the apparatus includes a first and second millimeter wave transceiver module. The apparatus also includes a guide rail device for each millimeter wave transceiver module. Each guide rail is connected to its respective transceiver module in slidable form. A driver drives each millimeter wave transceiver module to move along its guide rail device. Each millimeter wave transceiver module performs plane scans on the human body or article being inspected. A data processing device generates a millimeter wave holographic image from the plane scans.

    Abstract translation: 公开了一种毫米波三维全息扫描成像装置和用于检查人体或制品的方法。 在一个方面,该装置包括第一和第二毫米波收发器模块。 该装置还包括用于每个毫米波收发器模块的导轨装置。 每个导轨以可滑动的形式连接到其相应的收发器模块。 驱动器驱动每个毫米波收发器模块沿其导轨装置移动。 每毫米波收发器模块对人体或正在检查的物品执行平面扫描。 数据处理装置从平面扫描生成毫米波全息图像。

    Asymmetric field ion mobility spectrometer
    23.
    发明授权
    Asymmetric field ion mobility spectrometer 有权
    不对称场离子迁移谱仪

    公开(公告)号:US09052284B2

    公开(公告)日:2015-06-09

    申请号:US14128894

    申请日:2012-12-28

    CPC classification number: G01N27/624 G01N27/622

    Abstract: The present invention discloses an asymmetric field ion mobility spectrometer. It comprises an ionization source, for generating ions; an electrode plate; a plurality of electrode filaments, arranged in opposite to and spaced apart from the electrode plate by an analysis gap, wherein a high voltage of electrical field is applied between the electrode plate and the electrode filaments to form an ion migration area, the electrode filaments used to collect the ions that do not pass through the ion migration area; and a collection electrode, disposed at a rear end of the ion migration area, and collecting the ions that have passed through the ion migration area. The present asymmetric field ion mobility spectrometer is capable of improving accuracy of identifying peak positions of the ions, reducing scanning time of DC voltage and types of compensation voltage, thereby increasing ion detection efficiency.

    Abstract translation: 本发明公开了一种不对称场离子迁移谱仪。 它包括用于产生离子的电离源; 电极板; 多个电极丝,通过分析间隙与电极板相对并间隔布置,其中在电极板和电极丝之间施加高电压的电场以形成离子迁移区域,所用的电极丝 收集不通过离子迁移区的离子; 以及收集电极,设置在离子迁移区域的后端,并且收集已经通过离子迁移区域的离子。 本不对称场离子淌度光谱仪能够提高识别离子峰位置的精度,减少直流电压的扫描时间和补偿电压的种类,从而提高离子检测效率。

    SEMICONDUCTOR DETECTOR
    24.
    发明申请
    SEMICONDUCTOR DETECTOR 有权
    半导体检测器

    公开(公告)号:US20140319635A1

    公开(公告)日:2014-10-30

    申请号:US14152332

    申请日:2014-01-10

    CPC classification number: G01T1/366 G01T1/241 G01T3/08

    Abstract: The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.

    Abstract translation: 本发明提供一种半导体检测器,该半导体检测器包括半导体晶体,阴极,阳极和至少一个梯形电极; 半导体晶体包括顶表面,底表面和至少一个侧面; 阴极,阳极和梯形电极是沉积在半导体晶体表面上的导电薄膜; 阴极设置在半导体晶体的底表面上,阳极设置在半导体晶体的顶表面上,梯形电极设置在半导体晶体的至少一个侧面上; 并且梯形电极包括多个子电极。 与现有技术相比,半导体检测器可以提高能量分辨率。

    Coplanar electrode photodiode array and manufacturing method thereof

    公开(公告)号:US10411051B2

    公开(公告)日:2019-09-10

    申请号:US15580848

    申请日:2016-08-31

    Abstract: A coplanar electrode photodiode array and a manufacturing method thereof are disclosed. On a top side of a low resistance rate substrate, a high resistance epitaxial silicon wafer, a first conductive type heavily doped region and a second conductive type doped region are formed, which are a cathode and an anode of a photodiode respectively. The structure includes a trench structure formed between the anode and the cathode, the trench structure may be form by a gap, an insulating material, a conductive structure, a reflective material, and ion implantation, and also includes a first conductive type heavily doped region, an insulating isolation layer or a conductive structure with an insulating layer, and the like formed under the anode and the cathode.

    Methods and apparatuses for measuring effective atomic number of an object
    30.
    发明授权
    Methods and apparatuses for measuring effective atomic number of an object 有权
    用于测量物体的有效原子序数的方法和装置

    公开(公告)号:US09464997B2

    公开(公告)日:2016-10-11

    申请号:US14129669

    申请日:2012-12-28

    CPC classification number: G01N23/087 G01N2223/402 G01N2223/507 G01T1/22

    Abstract: Methods and apparatuses for measuring an effective atomic number of an object are disclosed. The apparatus includes: a ray source configured to product a first X-ray beam having a first energy and a second X-ray beam having a second energy; a Cherenkov detector configured to receive the first X-ray beam and the second X-ray beam that pass through an object under detection, and to generate a first detection value and a second detection value; and a data processing device configured to obtain an effective atomic number of the object based on the first detection value and the second detection value. The Cherenkov detector can eliminate disturbance of X-rays below certain energy threshold with respect to the object identification, and thus accuracy can be improved for object identification.

    Abstract translation: 公开了用于测量物体的有效原子序数的方法和装置。 该装置包括:射线源,被配置为产生具有第一能量的第一X射线束和具有第二能量的第二X射线束; 切伦科夫检测器,被配置为接收通过检测对象的第一X射线束和第二X射线束,并产生第一检测值和第二检测值; 以及数据处理装置,被配置为基于所述第一检测值和所述第二检测值来获得所述对象的有效原子序数。 切恩科夫检测器可以消除相对于物体识别的某些能量阈值以下的X射线干扰,从而可以提高对象识别的精度。

Patent Agency Ranking