公开(公告)号：US06465228B1

公开(公告)日：2002-10-15

申请号：US09495523

申请日：2000-01-31

申请人： Shigeru Nakamori ,  Sakayu Shimizu ,  Masaru Wada

发明人： Shigeru Nakamori ,  Sakayu Shimizu ,  Masaru Wada

IPC分类号： C12N902

CPC分类号： C12N9/0008 ,  C12P7/26 ,  C12P41/002

摘要： A levodione reductase having the following physical properties is provided: molecular weight: from about 142,000 to about 155,000±10,000 (consisting of four homologous subunits having a molecular weight of 36,000±5,000); co-factor: nicotinamide adenine dinucleotide (AND/NADH); substrate specificity: active on levodione; optimum temperature: about 15° C. to about 20° C. at pH 7.0; optimum pH: 7.5; and activator: K+, Cs+, Rb+, Na+ and NH4+. The levodione reductase according to the present invention produces actinol, an important intermediate for the production of zeaxanthin, from levodione. This enzyme may be produced from a microorganism belonging to the genus Corynebacterium, preferably the microorganism Corynebacterium aquaticum AKU 611 (FERM BP-6448) or a functional equivalent, subculture, mutant or variant thereof. Also provided is a process for producing the levodione reductase that includes cultivating a microorganism of the genus Corynebacterium in an aqueous medium under aerobic conditions, disrupting the cells of the microorganism and isolating and purifying the levodione reductase from the cell-free extract. A process for producing actinol from levodione is also provided that includes contacting levodione with levodione reductase in the presence of the reduced form of nicotinamide adenine dinucleotide or a cell-free extract of the microorganism, and then isolating the resulting actinol from the reaction mixture.

摘要翻译： 提供了具有以下物理性质的左旋二酮还原酶：分子量：约142,000至约155,000±10,000（由分子量为36,000±5,000的四个同源亚基组成）; 辅因子：烟酰胺腺嘌呤二核苷酸（AND / NADH）; 底物特异性：对左旋多巴有活性; 最适温度：约15℃至约20℃，pH 7.0; 最适pH：7.5; 和活化剂：K +，Cs +，Rb +，Na +和NH4 +。 根据本发明的左氧多糖还原酶从左旋二酮生产作为玉米黄质生产的重要中间体的肌动蛋白。 该酶可以由属于棒状杆菌属的微生物，优选微生物棒状杆菌属水杨酸AKU 611（FERM BP-6448）或其功能等同的传代培养，突变体或变体产生。 还提供了生产左旋体还原酶的方法，其包括在需氧条件下在水性介质中培养棒状杆菌属的微生物，破坏微生物的细胞并从无细胞提取物中分离和纯化左旋体还原酶。 还提供了用于从左旋二酮生产锕系元素的方法，包括在还原形式的烟酰胺腺嘌呤二核苷酸或微生物的无细胞提取物的存在下将左旋多糖与左旋二酮还原酶接触，然后从反应混合物中分离得到的锕系元素。

公开(公告)号：US6072024A

公开(公告)日：2000-06-06

申请号：US42942

申请日：1998-03-17

申请人： Yoshihiro Irizato ,  Makoto Sukegawa ,  Toshio Katoh ,  Hiroaki Tamatani ,  Akinori Nagatomo ,  Masaru Wada

发明人： Yoshihiro Irizato ,  Makoto Sukegawa ,  Toshio Katoh ,  Hiroaki Tamatani ,  Akinori Nagatomo ,  Masaru Wada

IPC分类号： C08G73/10 ,  C08G69/10

CPC分类号： C08G73/1092

摘要： A process is disclosed for producing with good productivity a cross-linked polyaspartic acid resin having biodegradability and high water absorbency. The process features inclusion of one of the following steps: (a) a polysuccinimide, which has been brought into a dispersed state by a dispersant, and a cross-linking agent are reacted to produce the cross-linked polyaspartic acid resin; (b) imide rings of a cross-linked polysuccinimide are subjected to a hydrolysis reaction while controlling a swelling degree of a resulting gel, whereby the cross-linked polyaspartic acid resin is produced; and (c) a gel of a cross-linked polysuccinimide, which has been obtained by reacting a cross-linking agent to a solution of a polysuccinimide in an organic solvent, is disintegrated to subject imide rings of the cross-linked polysuccinimide to a hydrolysis reaction, so that the cross-linked polyaspartic acid resin is produced. The process may also include one or both of the following steps as needed: (d) a gel of the cross-linked polyaspartic acid resin is washed with water and/or a water-miscible organic solvent; and (e) the polysuccinimide is produced using a basic amino acid as a cross-linking agent.

摘要翻译： 公开了一种具有生物降解性和高吸水性的交联聚天冬氨酸树脂以高生产率生产的方法。 该方法包括以下步骤之一：（a）已经通过分散剂进入分散状态的聚琥珀酰亚胺和交联剂反应生成交联聚天冬氨酸树脂; （b）交联聚琥珀酰亚胺的酰亚胺环进行水解反应同时控制所得凝胶的溶胀度，从而制得交联聚天冬氨酸树脂; 和（c）通过使交联剂与聚琥珀酰亚胺在有机溶剂中的溶液反应而获得的交联聚琥珀酰亚胺的凝胶被分解以使交联的聚琥珀酰亚胺的酰亚胺环进行水解 反应，制成交联聚天冬氨酸树脂。 该方法还可以根据需要包括以下步骤中的一种或两种：（d）用水和/或水混溶性有机溶剂洗涤交联聚天冬氨酸树脂的凝胶; 和（e）使用碱性氨基酸作为交联剂制备聚琥珀酰亚胺。

公开(公告)号：US5904554A

公开(公告)日：1999-05-18

申请号：US979862

申请日：1997-11-26

申请人： Chihiro Uchibori ,  Masanori Murakami ,  Akira Otsuki ,  Takeo Oku ,  Masaru Wada

发明人： Chihiro Uchibori ,  Masanori Murakami ,  Akira Otsuki ,  Takeo Oku ,  Masaru Wada

IPC分类号： H01L21/28 ,  H01L21/203 ,  H01L21/265 ,  H01L21/285 ,  H01L21/337 ,  H01L21/338 ,  H01L29/08 ,  H01L29/45

CPC分类号： H01L29/66924 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/0891 ,  H01L29/452 ,  H01L29/66878

摘要： An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n.sup.+ -type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300.degree. C. for 30 minutes and next at, e.g. 650.degree. C. for one second to fabricate an ohmic electrode.

摘要翻译： 公开了具有实际令人满意的特性的诸如GaAs半导体的III-V族化合物半导体的欧姆电极。 通过溅射等将非单晶InAs层，Ni膜，WSi膜和W膜依次沉积在n +型GaAs衬底上，随后通过剥离等进行图案化，以制造用于制造的多层结构 欧姆电极。 然后首先将结构退火，例如。 300℃，30分钟，然后在例如 650℃下制造欧姆电极1秒钟。

公开(公告)号：US5200729A

公开(公告)日：1993-04-06

申请号：US479301

申请日：1990-02-07

申请人： Katsuji Soeda ,  Shuzo Otsuki ,  Masaru Wada

发明人： Katsuji Soeda ,  Shuzo Otsuki ,  Masaru Wada

IPC分类号： H01F7/02 ,  H01F13/00 ,  H02K1/27 ,  H02K15/03 ,  H02K41/03

CPC分类号： H01F13/003 ,  H01F7/021 ,  H02K1/2733 ,  H02K1/2793 ,  H02K15/03 ,  H02K41/03

摘要： Disclosed is a permanent magnet which is suitable for use for a field system of an electric motor or the like and which is constituted by a single piece of magnetic material in which S and N poles are alternately continuously formed through non-magnetic flux regions or weak magnetic flux regions interposed therebetween, and further disclosed is a magnetization apparatus for magnetizing such a permanent magnet. The magnetization apparatus comprises a first magnetic flux generation unit provided on one surface of a single piece of magnetic material for generating N-pole magnetic flux, a second magnetic flux generation unit provided adjacently to the first magnetic flux generation unit on the one surface for generating S-pole magnetic flux, and a third magnetic flux generation unit provided between the first and second magnetic flux generation unit on the one surface for passing therethrough part of magnetic flux generated by the first and second magnetic flux generation unit and for generating magnetic flux for canceling the magnetic flux passing through the third magnetic flux generation unit, whereby N and S poles are formed in domains of an object to be magnetized opposite to the first and second magnetic flux generation units and non-magnetic flux regions or weak magnetic flux regions are formed in domains of the object to be magnetized opposite to the third magnetic flux generation unit.

摘要翻译： 公开了一种适用于电动机等的场系的永磁体，其由单片磁性材料构成，其中S和N极通过非磁通区域或弱磁性交替连续形成 介于其间的磁通区域，并且还公开了一种用于磁化这种永磁体的磁化装置。 磁化装置包括：第一磁通产生单元，设置在单个磁性材料的一个表面上，用于产生N极磁通;第二磁通量产生单元，设置在第一磁通量产生单元的一个表面上，用于产生 S极磁通和第一磁通产生单元，其设置在一个表面上的第一和第二磁通产生单元之间，用于通过由第一和第二磁通产生单元产生的磁通的部分，并产生用于 抵消通过第三磁通产生单元的磁通量，从而在与第一和第二磁通量产生单元和非磁通区域或弱磁通量区域相对的待磁化对象的区域中形成N和S极 形成在与第三磁通产生单元相对的待磁化对象的域中。

公开(公告)号：US4783521A

公开(公告)日：1988-11-08

申请号：US4323

申请日：1987-01-16

申请人： Akihiro Yamaguchi ,  Keizaburo Yamaguchi ,  Yoshimitsu Tanabe ,  Makoto Asano ,  Masaru Wada

发明人： Akihiro Yamaguchi ,  Keizaburo Yamaguchi ,  Yoshimitsu Tanabe ,  Makoto Asano ,  Masaru Wada

IPC分类号： B41M5/155 ,  C08G61/10 ,  C08G63/06

CPC分类号： B41M5/155 ,  C08G61/10

摘要： Disclosed herein are novel linear copolymers having weight average molecular weight of 500-30,000 and comprising structural units represented by the following formulae (I), (II), (III) and (IV): ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 mean individually an alkyl group having 4 or fewer carbon atoms and R.sub.4 denotes an alkyl, cycloalkyl, aralkyl or phenyl group, and multivalent metal salts thereof in each of which the multivalent metal forms the multivalent metal salt between carboxyl groups within the same molecule of the copolymer or between different molecules of the copolymer; color-developing agents comprising multivalent metal-modified resins of the copolymers; and color-developing sheets obtained by coating the color-developing agents on their surfaces.

摘要翻译： 本文公开了重均分子量为500〜30,000的新型线性共聚物，其包含由下式（I），（II），（III）和（IV）表示的结构单元：（I） （III）其中R1，R2和R3分别表示具有4个或更少碳原子的烷基，R4表示烷基，环烷基，芳烷基或苯基，其多价金属盐在 其中的多价金属在共聚物的相同分子内或共聚物的不同分子之间的羧基之间形成多价金属盐; 包含共聚物的多价金属改性树脂的显色剂; 以及通过在其表面上涂布显色剂而获得的显色片。

公开(公告)号：US4546478A

公开(公告)日：1985-10-08

申请号：US614390

申请日：1984-05-25

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

IPC分类号： H01S5/00 ,  H01L21/60 ,  H01S5/02 ,  H01S3/19

CPC分类号： H01S5/02252 ,  H01L2224/32057 ,  H01L2224/83385 ,  H01L2224/83801 ,  H01L24/31 ,  H01L24/83 ,  H01L2924/01014 ,  H01L2924/12042

摘要： A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means, or by engaging a square recess as a first engaging means and the square bottom of the sub-mount as a second engaging means with each other. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.

摘要翻译： 提高半导体激光芯片在散热片或金属安装座上的安装，以实现高精度的位置和方向。 安装有半导体激光芯片的散热器或金属安装件包括两部分，即主安装件或更大部分和副安装件或更小部件。 利用显微镜将半导体激光芯片通过焊接层焊接在子座上，以确保相对于子安装座的精确位置和准确的方向。 然后，通过将位于主要安装座的上表面上设置的第一接合装置的直线状脊线与直槽相啮合，通过焊接层将焊接层焊接在主安装座上，焊接层的位置和方向都精确， 后端面作为第二接合装置，或者通过将作为第一接合装置的方形凹槽和副安装座的方形底部彼此接合作为第二接合装置。 作为上述结构的结果，可以容易地以高产率获得半导体激光器芯片相对于安装座的精确位置和方向。

公开(公告)号：USD279705S

公开(公告)日：1985-07-16

申请号：US450739

申请日：1982-12-17

申请人： Masaru Wada

设计人： Masaru Wada

公开(公告)号：US4505252A

公开(公告)日：1985-03-19

申请号：US530816

申请日：1983-09-09

申请人： Takashi Wada ,  Masaru Wada ,  Toshi Matsu

发明人： Takashi Wada ,  Masaru Wada ,  Toshi Matsu

IPC分类号： B29C39/10 ,  A47J39/02 ,  B29K91/00 ,  B65D6/04 ,  B65D6/10 ,  A47G23/04

CPC分类号： A47J36/2494

摘要： A hollow dish with a discrete, meltable core such as a wax core includes top and bottom members welded to one another at their periphery, and a meltable, preferably wax core confined within an oxygen-free, water-free cavity between the top and bottom members. A method for making a hollow dish with such a core includes liquifying a meltable substance such as wax in an oxygen-free, water-free, inert atmosphere; cooling and solidifying the meltable substance to form a meltable core; placing the meltable wax core in the cavity inside a hollow dish; removing all oxygen and water from the core-containing cavity inside the hollow dish; and sealing the hollow dish to preclude escape of the wax core from the cavity and to preclude oxygen and water from entering the cavity.

摘要翻译： 具有分散的，可熔融的芯（例如蜡芯）的中空盘包括在其周边彼此焊接的顶部和底部构件，以及可熔融的，优选地，蜡被限制在顶部和底部之间的无氧，无水空腔中 会员 制造具有这种芯的中空盘的方法包括在无氧，无水，惰性气氛中液化可熔物质如蜡; 冷却和固化可熔物质以形成可熔芯; 将可熔蜡芯置于中空盘内的空腔内; 从空心盘中的含芯腔中除去所有的氧和水; 并密封中空盘，以防止蜡芯从空腔中逸出并防止氧气和水进入空腔。

公开(公告)号：US4371967A

公开(公告)日：1983-02-01

申请号：US215665

申请日：1980-12-12

申请人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

发明人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/305 ,  H01S5/32308 ,  Y10S438/916

摘要： In a semiconductor laser which has epitaxial layers including an active layer on a semiconductor substrate, a buffer layer is formed neighboring the active layer, in order to prevent undesirable diffusion of a highly diffusing dopant (Zn) into the active layer from an adjacent layer such as the second clad layer. The buffer layer has the same conductivity as that of the adjacent layer, has a broader energy gap than the active layer, and the dopant of the buffer layer is less diffusing than that of the adjacent layer.

摘要翻译： 在半导体衬底上具有包括有源层的外延层的半导体激光器中，形成与有源层相邻的缓冲层，以便防止高度扩散的掺杂​​剂（Zn）从相邻层（例如 作为第二包覆层。 缓冲层具有与相邻层相同的导电性，具有比有源层更宽的能隙，并且缓冲层的掺杂剂比相邻层的扩散更少。

公开(公告)号：US09356247B2

公开(公告)日：2016-05-31

申请号：US12614070

申请日：2009-11-06

申请人： Masaru Wada ,  Shinichiro Kondo ,  Ryouichi Yasuda

发明人： Masaru Wada ,  Shinichiro Kondo ,  Ryouichi Yasuda

IPC分类号： H01L51/10 ,  H01L51/05 ,  B82Y10/00 ,  H01L51/00

CPC分类号： H01L51/0566 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/005 ,  H01L51/0068 ,  H01L51/0075 ,  H01L51/0094 ,  H01L51/0095 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/89 ,  Y10S977/936 ,  Y10S977/938

摘要： A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for fabricating the same are provided. Fine particles that include a conductor or a semiconductor and organic semiconductor molecules, are alternately bonded through a functional group at both terminals of the organic semiconductor molecules to form a conducting path in a network form such that the conducting path in the fine particles and the conducting path in the organic semiconductor molecules are two-dimensionally or three-dimensionally linked together. This conducting path includes no intermolecular electron transfer, and the mobility is not restricted by the intermolecular electron transfer, and therefore the mobility of the conducting path along the main chain in the organic semiconductor molecules (in the direction of the axis of the molecule), for example, displays a high intramolecular mobility due to delocalized π electrons can be fully utilized.

摘要翻译： 其中由有机半导体分子形成的导电路径作为材料的半导体装置具有新的结构并且具有高迁移率，并且提供了制造方法。 包含导体或半导体的微粒和有机半导体分子通过有机半导体分子两端的官能团交替键合，以形成网络形式的导电路径，使得微粒中的导电路径和导电 有机半导体分子中的路径二维或三维连接在一起。 该导电路径不包含分子间电子转移，并且迁移率不受分子间电子转移的限制，因此在有机半导体分子（沿分子轴的方向）沿主链的导电路径的迁移率， 例如，显示由于离域化而导致的高分子内迁移率 可以充分利用电子。