公开(公告)号：US20140102875A1

公开(公告)日：2014-04-17

申请号：US13652755

申请日：2012-10-16

Applicant: Silvia De Dea ,  Georgiy O. Vaschenko ,  Peter Baumgart ,  Norbert Bowering

Inventor： Silvia De Dea ,  Georgiy O. Vaschenko ,  Peter Baumgart ,  Norbert Bowering

IPC: F16L9/14 ,  C23C14/35 ,  H05G2/00 ,  C23C14/34

CPC classification number: G03F7/70033 ,  C23C14/185 ,  H05G2/003 ,  H05G2/006 ,  H05G2/008

Abstract: A target material supply apparatus for an extreme ultraviolet (EUV) light source includes a tube that includes a first end, a second end, and a sidewall defined between the first and second ends. At least a portion of an outer surface of the tube includes an electrically insulating material, the first end receives a pressurized target material, and the second end defines an orifice through which the pressurized target material passes to produce a stream of target material droplets. The target material supply apparatus also includes an electrically conductive coating on the outer surface of the tube. The coating is configured to electrically connect the outer surface of the tube to ground to thereby reduce surface charge on the outer surface.

Abstract translation: 用于极紫外（EUV）光源的目标材料供应装置包括管，其包括限定在第一和第二端之间的第一端，第二端和侧壁。 管的外表面的至少一部分包括电绝缘材料，第一端容纳加压目标材料，第二端限定出加压目标材料通过的孔，以产生目标材料液滴流。 目标材料供应装置还包括在管的外表面上的导电涂层。 涂层被配置为将管的外表面电连接到地，从而减少外表面上的表面电荷。

公开(公告)号：US07671349B2

公开(公告)日：2010-03-02

申请号：US11786145

申请日：2007-04-10

Applicant: Alexander N. Bykanov ,  Norbert Bowering ,  Igor V. Fomenkov ,  David C. Brandt ,  Alexander I. Ershov ,  Oleh Khodykin ,  William N. Partlo

Inventor： Alexander N. Bykanov ,  Norbert Bowering ,  Igor V. Fomenkov ,  David C. Brandt ,  Alexander I. Ershov ,  Oleh Khodykin ,  William N. Partlo

IPC: H04H1/04

CPC classification number: G03F7/70916 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70908 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/008

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract translation: 公开了一种可以包括在等离子体位置处产生等离子体的系统，等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件，例如多个远离现场的多层反射镜，以及设置在等离子体和光学元件之间的流动气体，该气体建立足以在该距离上操作的气体压力， d，在离子到达光学器件之前，将离子能量降低到预先选定的值以下。 在一个实施方案中，气体可以包含氢气，并且在一个具体实施方案中，气体可以包含大于50体积％的氢气。

公开(公告)号：US07323703B2

公开(公告)日：2008-01-29

申请号：US11647007

申请日：2006-12-27

Applicant: I. Roger Oliver ,  William N. Partlo ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  Norbert Bowering ,  John Viatella ,  David W. Myers

Inventor： I. Roger Oliver ,  William N. Partlo ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  Norbert Bowering ,  John Viatella ,  David W. Myers

IPC: H01J35/20

CPC classification number: G03F7/70033 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/065 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/006 ,  H05G2/008

Abstract: An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.

Abstract translation: 描述了可以包括可以包括等离子体形成室的等离子体产生的极紫外（“EUV”）光源多层收集器的装置和方法; 等离子体形成室内的壳体，具有焦点的收集器形状; 壳体具有足够的尺寸和热质量以将工作热量从多层反射器散开，并且在壳体的与焦点相对的一侧上从壳体的表面辐射热量。 壳的材料可以包括选自可以包括碳化硅，硅，Zerodur或ULE玻璃，铝，铍，钼，铜和镍的组的材料。 装置和方法可以包括指向壳体的至少一个辐射加热器，以将壳体的稳态温度维持在所选择的工作温度范围内。

公开(公告)号：US20070170378A1

公开(公告)日：2007-07-26

申请号：US11725940

申请日：2007-03-19

Applicant: Norbert Bowering ,  Alexander Ershov ,  Timothy Dyer ,  Hugh Grinolds

Inventor： Norbert Bowering ,  Alexander Ershov ,  Timothy Dyer ,  Hugh Grinolds

IPC: G01J3/10

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916

Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

公开(公告)号：US20050269529A1

公开(公告)日：2005-12-08

申请号：US11174442

申请日：2005-06-29

Applicant: Alexander Ershov ,  William Marx ,  Norbert Bowering ,  Bjorn Hansson ,  Oleh Khodykin ,  Igor Fomenkov ,  William Partlo

Inventor： Alexander Ershov ,  William Marx ,  Norbert Bowering ,  Bjorn Hansson ,  Oleh Khodykin ,  Igor Fomenkov ,  William Partlo

IPC: G03F7/20 ,  G01J1/00

CPC classification number: B82Y10/00 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/7085 ,  G03F7/70916 ,  G21K1/06 ,  G21K2201/06 ,  H05G2/001

Abstract: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

Abstract translation: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面，提供了一种EUV计量监测器，其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面，公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面，EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面，公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

公开(公告)号：US20050230645A1

公开(公告)日：2005-10-20

申请号：US11107535

申请日：2005-04-14

Applicant: Stephan Melnychuk ,  William Partlo ,  Igor Fomenkov ,  I. Oliver ,  Richard Ness ,  Norbert Bowering ,  Oleh Khodykin ,  Curtis Rettig ,  Gerry Blumenstock ,  Timothy Dyer ,  Rodney Simmons ,  Jerzy Hoffman ,  R. Johnson

Inventor： Stephan Melnychuk ,  William Partlo ,  Igor Fomenkov ,  I. Oliver ,  Richard Ness ,  Norbert Bowering ,  Oleh Khodykin ,  Curtis Rettig ,  Gerry Blumenstock ,  Timothy Dyer ,  Rodney Simmons ,  Jerzy Hoffman ,  R. Johnson

IPC: G21K5/00 ,  G01J1/00 ,  G03F7/20 ,  G21K5/02 ,  H01L21/027 ,  H01S3/00 ,  H05G2/00 ,  H05H1/06 ,  H05H1/24

CPC classification number: H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70175 ,  G03F7/70916 ,  H01S3/005 ,  H05G2/005 ,  H05G2/008 ,  H05H1/06

Abstract: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

公开(公告)号：US20050205811A1

公开(公告)日：2005-09-22

申请号：US10979919

申请日：2004-11-01

Applicant: William Partlo ,  Daniel Brown ,  Igor Fomenkov ,  Norbert Bowering ,  Curtis Rettig ,  Joseph MacFarlane ,  Alexander Ershov ,  Bjorn Hansson

Inventor： William Partlo ,  Daniel Brown ,  Igor Fomenkov ,  Norbert Bowering ,  Curtis Rettig ,  Joseph MacFarlane ,  Alexander Ershov ,  Bjorn Hansson

IPC: G01J1/00 ,  G03F7/20 ,  H01J65/04 ,  H05G2/00

CPC classification number: B82Y10/00 ,  G03F7/70033 ,  H05G2/003 ,  H05G2/008

Abstract: An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.

Abstract translation: 描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法，其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体 具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体，以将等离子体中的发射材料压缩到等离子体的发射区域。 等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲，以具有相关联的较低的临界密度，从而在由等离子体的波长定义的等离子体的区域内的等离子体内发生吸收 等离子体照射脉冲从初始目标照射位置充分分离，以实现发射材料的压缩，并且可以压缩发射区域。 激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。 可以从初始目标表面去除等离子体照射脉冲的沉积区域，以确保有利地发射等离子体的压缩。 高转换效率的激光产生的等离子体极紫外（“EUV”）光源可以包括激光初始靶照射脉冲发生机构，用目标照射脉冲照射等离子体引发目标，以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。

公开(公告)号：US20050199830A1

公开(公告)日：2005-09-15

申请号：US11021261

申请日：2004-12-22

Applicant: Norbert Bowering ,  Alexander Ershov ,  Timothy Dyer ,  Hugh Grinolds

Inventor： Norbert Bowering ,  Alexander Ershov ,  Timothy Dyer ,  Hugh Grinolds

IPC: G03F7/20 ,  G03F9/00 ,  G21K1/06 ,  G01J1/00

CPC classification number: G21K1/062 ,  B82Y10/00 ,  G03F7/70175 ,  G03F7/70916

Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

Abstract translation: 公开了用于形成等离子体产生的EUV光源光学元件的装置和方法，例如，包括使用各种二元层材料的MLM堆叠的反射器和包括用于等离子体产生的EUV光源室中的单个和二进制封盖层的封盖层，特别是在 等离子体源材料与一种或多种MLM材料反应。

公开(公告)号：US07598509B2

公开(公告)日：2009-10-06

申请号：US11358992

申请日：2006-02-21

Applicant: Alexander I. Ershov ,  William N. Partlo ,  Norbert Bowering ,  Bjorn Hansson

Inventor： Alexander I. Ershov ,  William N. Partlo ,  Norbert Bowering ,  Bjorn Hansson

IPC: G01J3/10

CPC classification number: H05G2/003 ,  B82Y10/00 ,  G03F7/70033 ,  H05G2/005 ,  H05G2/008

Abstract: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

Abstract translation: 公开了一种EUV光源，其可以包括例如激光源。 CO2激光器，等离子体室和用于将激光束从激光源传递到等离子体室中的光束传送系统。 公开了可以包括以下中的一个或多个的实施例; 可以提供旁路管线以建立等离子体室和辅助室之间的流体连通，聚焦光学器件例如。 用于将激光束聚焦到等离子体室中的焦点的反射镜，用于转向等离子体室中的激光束焦斑的转向光学元件，以及用于调整焦度的光学装置。

公开(公告)号：US20080179548A1

公开(公告)日：2008-07-31

申请号：US11786145

申请日：2007-04-10

Applicant: Alexander Bykanov ,  Norbert Bowering ,  Igor Fomenkov ,  David Brandt ,  Alexander Ershov ,  Oleh Khodykin ,  William Partlo

Inventor： Alexander Bykanov ,  Norbert Bowering ,  Igor Fomenkov ,  David Brandt ,  Alexander Ershov ,  Oleh Khodykin ,  William Partlo

IPC: H05H1/24

CPC classification number: G03F7/70916 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70908 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/008

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract translation: 公开了一种可以包括在等离子体位置处产生等离子体的系统，等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件，例如多个远离现场的多层反射镜，以及设置在等离子体和光学元件之间的流动气体，该气体建立足以在该距离上操作的气体压力， d，在离子到达光学器件之前，将离子能量降低到预先选定的值以下。 在一个实施方案中，气体可以包含氢气，并且在一个具体实施方案中，气体可以包含大于50体积％的氢气。