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公开(公告)号：US20050128799A1
公开(公告)日：2005-06-16
申请号：US11002245
申请日：2004-12-03
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0071 , G11C2013/0078 , G11C2013/009 , G11C2213/76 , G11C2213/79
摘要： In a non-volatile phase change memory, information is recorded by utilizing a change in resistance of a phase change portion. When the phase change portion is allowed to generate Joule's heat and is held at a specific temperature, it goes into a state of a low resistance. At this time, if a constant voltage source is used, not only the phase change portion assumes a state of a low resistance, but also a large current flows, so that a sample concerned is overheated and goes into a state of a high resistance. Thus, it is difficult to make the phase change portion low in resistance stably. When the gate voltage of a memory cell selection transistor QM is controlled with MISFET to afford a low resistance state, the maximum amount of current applied to the sample is limited by the application of a medium-state voltage.
摘要翻译： 在非易失性相变存储器中，利用相变部分的电阻变化来记录信息。 当相变部分产生焦耳热并保持在特定温度时，其进入低电阻状态。 此时，如果使用恒定电压源，则不仅相变部分呈现低电阻状态，而且流过大电流，使得有关样品过热并进入高电阻状态。 因此，难以稳定地使相位变化部的电阻低。 当用MISFET控制存储单元选择晶体管QM的栅极电压以提供低电阻状态时，施加到样品的最大电流量受到施加中等电压的限制。
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公开(公告)号：US08129707B2
公开(公告)日：2012-03-06
申请号：US12487492
申请日：2009-06-18
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。
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公开(公告)号：US07834337B2
公开(公告)日：2010-11-16
申请号：US10587079
申请日：2004-12-20
IPC分类号： H01L29/02
CPC分类号： G11C13/0004 , G11C13/04 , G11C13/047 , G11C2213/56 , G11C2213/71 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase-change memory device including a memory cell having a memory element and a select transistor is improved in heat resistance so that it may be operable at 145° C. or higher.The memory layer is used which has a content of Zn or Cd of 20 at % or more and 50 at % or less, a content of Ge or Sb of 5 at % or more and 25 at % or less, and a content of Te of 40 at % or more and 65 at % or less in Zn-Ge-Te.
摘要翻译： 包括具有存储元件和选择晶体管的存储单元的相变存储器件的耐热性得到改善，使得其在145℃以上可操作。 使用具有20原子％以上且50原子％以下的Zn或Cd含量的记忆层，Ge或Sb的含量为5原子％以上且25原子％以下，Te含量 在Zn-Ge-Te中为40at％以上且65at％以下。
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公开(公告)号：US07470923B2
公开(公告)日：2008-12-30
申请号：US11370945
申请日：2006-03-09
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
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公开(公告)号：US20080089154A1
公开(公告)日：2008-04-17
申请号：US11952540
申请日：2007-12-07
IPC分类号： G11C7/00
CPC分类号： G11C11/5678 , G11C13/0004 , G11C2213/79 , H01L27/2436 , H01L27/2454 , H01L27/2463 , H01L45/06 , H01L45/1213 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A memory device is provided which includes a substrate, lower electrodes, selecting elements, memory elements formed of chalcogenide material and upper electrodes. The selecting elements and the memory elements are arranged to be disposed between the upper electrodes and the lower electrodes. In addition, the lower electrodes, the memory elements and the upper electrodes are disposed along lines perpendicular to the substrate surface when the memory device is viewed in a first direction.
摘要翻译： 提供了一种存储器件，其包括衬底，下电极，选择元件，由硫族化物材料形成的存储元件和上电极。 选择元件和存储元件布置成设置在上电极和下电极之间。 此外，当沿第一方向观察存储器件时，下电极，存储元件和上电极沿垂直于衬底表面的线设置。
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公开(公告)号：US20050156150A1
公开(公告)日：2005-07-21
申请号：US10975522
申请日：2004-10-29
IPC分类号： B41M5/26 , G11B7/24 , G11B7/241 , G11B7/243 , G11B7/252 , G11B7/254 , G11B7/257 , H01L27/24 , H01L29/02 , H01L45/00
CPC分类号： G11B7/2403 , G11B7/00454 , G11B7/243 , G11B7/252 , G11B7/257 , G11C13/0004 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144
摘要： A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.
摘要翻译： 相变存储器包括：基板; 形成在所述基板的主表面上的绝缘膜; 沉积在绝缘膜上的第一电极; 沉积在第一电极上的相变记录膜; 以及沉积在相变记录膜上的第二电极。 相变记录膜包含Ge，Sb和Te中的至少两个作为其主要构成元素。 第一电极包括Ti，Si和N组的材料，或Ta，Si和N组作为其主要构成材料。
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公开(公告)号：US08866120B2
公开(公告)日：2014-10-21
申请号：US13314165
申请日：2011-12-07
申请人： Yuichi Matsui , Nozomu Matsuzaki , Norikatsu Takaura , Naoki Yamamoto , Hideyuki Matsuoka , Tomio Iwasaki
发明人： Yuichi Matsui , Nozomu Matsuzaki , Norikatsu Takaura , Naoki Yamamoto , Hideyuki Matsuoka , Tomio Iwasaki
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.
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公开(公告)号：US20090140233A1
公开(公告)日：2009-06-04
申请号：US12268118
申请日：2008-11-10
申请人： Masaharu KINOSHITA , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
发明人： Masaharu KINOSHITA , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
IPC分类号： H01L45/00
CPC分类号： H01L27/101 , G11C5/02 , G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1675
摘要： A nonvolatile semiconductor memory device having a large storage capacity and stabilized rewriting conditions in which a memory cell includes a nonvolatile recording material layer, a selector element and a semiconductor layer provided between the nonvolatile recording material layer and the selector element and having a thickness ranging from 5 to 200 nm.
摘要翻译： 一种非易失性半导体存储器件，具有大的存储容量和稳定的重写条件，其中存储单元包括非易失性记录材料层，选择器元件和设置在非易失性记录材料层和选择器元件之间的半导体层， 5〜200nm。
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公开(公告)号：US20080048166A1
公开(公告)日：2008-02-28
申请号：US11907989
申请日：2007-10-19
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。
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公开(公告)号：US20060157680A1
公开(公告)日：2006-07-20
申请号：US11370945
申请日：2006-03-09
IPC分类号： H01L29/04
CPC分类号： H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.
摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。
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