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    IMAGE SENSOR WITH THREE READOUT APPROACH FOR PHASE DETECTION AUTOFOCUS AND IMAGE SENSING PIXELS
    22.
    发明申请
    IMAGE SENSOR WITH THREE READOUT APPROACH FOR PHASE DETECTION AUTOFOCUS AND IMAGE SENSING PIXELS 有权

    公开(公告)号：US20220394201A1

    公开(公告)日：2022-12-08

    申请号：US17342383

    申请日：2021-06-08

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chengcheng Xu ,  Rui Wang ,  Wei Deng ,  Chun-Sheng Yang ,  Xueqing Wang

    IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146 ,  H01L27/148

    Abstract: An imaging device includes a plurality of photodiodes arranged in a photodiode array to generate charge in response to incident light. The plurality of photodiodes includes first and second photodiodes. A shared floating diffusion receives charge transferred from the first and second photodiodes. An analog to digital converter (ADC) performs a first ADC conversion to generate a reference readout in response to charge in the shared floating diffusion after a reset operation. The ADC is next performs a second ADC conversion to generate a first half of a phase detection autofocus (PDAF) readout in response to charge transferred from the first photodiode to the shared floating diffusion. The ADC then performs a third ADC conversion to generate a full image readout in response to charge transferred from the second photodiode combined with the charge transferred previously from the first photodiode in the shared floating diffusion.

    Image sensor with voltage supply grid clamping
    23.
    发明授权
    Image sensor with voltage supply grid clamping 有权

    公开(公告)号：US11218659B2

    公开(公告)日：2022-01-04

    申请号：US16708135

    申请日：2019-12-09

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chengcheng Xu ,  Rui Wang ,  Bi Yuan ,  Liang Zuo

    IPC: H04N5/378 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/376 ,  H04N5/369 ,  H04N5/351

    Abstract: An image sensing device includes an image sensing circuit, a voltage supply grid, bitlines, and a control circuit. The image sensing circuit includes pixels arranged in rows and columns. Each one of the bitlines is coupled to a corresponding one of the columns. The voltage supply grid is coupled to the pixels. The control circuit is coupled to output at least a row select signal and a transfer signal to the rows. Each one of the rows is selectively coupled to the bitlines to selectively output image data signals in response to the row select signal and the transfer signal. Each one of the rows is further selectively coupled to the bitlines to selectively clamp the bitlines in response to the row select signal and the transfer signal. Each one of the rows is selectively decoupled from the bitlines in response to the row select signal.

    IMAGE SENSOR WITH CAPACITOR RANDOMIZATION FOR COLUMN GAIN
    24.
    发明申请
    IMAGE SENSOR WITH CAPACITOR RANDOMIZATION FOR COLUMN GAIN 有权

    公开(公告)号：US20210392286A1

    公开(公告)日：2021-12-16

    申请号：US16900576

    申请日：2020-06-12

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Hiroaki Ebihara ,  Rui Wang ,  John Brummer ,  Shan Chen

    IPC: H04N5/378 ,  H04N5/355 ,  H04N5/365

    Abstract: A pixel cell readout circuit includes a bitline input stage coupled to a bitline to receive an image signal from a pixel cell. A capacitor ratio circuit is coupled to the bitline input stage. A gain of the bitline input stage is responsive to a capacitor ratio provided by the capacitor ratio circuit to the bitline input stage. A switch control circuit is coupled to receive a gain signal. The switch control circuit is coupled to generate a randomized pattern selection signal coupled to be received by the capacitor ratio circuit to select the capacitor ratio provided by the capacitor ratio circuit in response to the gain signal.

    IMAGE SENSOR WITH SHIFTED COLOR FILTER ARRAY PATTERN AND BIT LINE PAIRS
    25.
    发明申请
    IMAGE SENSOR WITH SHIFTED COLOR FILTER ARRAY PATTERN AND BIT LINE PAIRS 有权

    公开(公告)号：US20210337169A1

    公开(公告)日：2021-10-28

    申请号：US16855857

    申请日：2020-04-22

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Qingfei Chen ,  Rui Wang ,  Wei Wei Wang ,  Zhiyong Zhan ,  Xin Wang ,  Qingwei Shan ,  Kenny Geng

    IPC: H04N9/04 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/378

    Abstract: An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.

    Two stage amplifier readout circuit in pixel level hybrid bond image sensors
    27.
    发明授权
    Two stage amplifier readout circuit in pixel level hybrid bond image sensors 有权

    公开(公告)号：US10375338B2

    公开(公告)日：2019-08-06

    申请号：US15421881

    申请日：2017-02-01

    Applicant: OmniVision Technologies, Inc.

    Inventor： Zheng Yang ,  Hiroaki Ebihara ,  Chun-Ming Tang ,  Chao-Fang Tsai ,  Rui Wang ,  Tiejun Dai

    IPC: H04N5/378 ,  H04N5/369 ,  H04N5/374 ,  H01L27/146 ,  H04N5/3745

    Abstract: A hybrid bonded image sensor has a photodiode die with macrocells having at least one photodiode and a bond contact; a supporting circuitry die with multiple supercells, each supercell having at least one macrocell unit having a bond contact coupled to the bond contact of a macrocell of the photodiode die. Each macrocell unit lies within a supercell and has a reset transistor adapted to reset photodiodes of the macrocell of the photodiode die. Each supercell has at least one common source amplifier adapted to receive signal from the bond contact of a selected macrocell unit of the supercell, the common source amplifier coupled to drive a column line through a selectable source follower. In embodiments, the common source amplifiers of several supercells drive the selectable source follower through a distributed differential amplifier.

    TIME OF FLIGHT IMAGING WITH IMPROVED INITIATION SIGNALING
    29.
    发明申请
    TIME OF FLIGHT IMAGING WITH IMPROVED INITIATION SIGNALING 有权
    飞行成像的时间与改进的启动信号

    公开(公告)号：US20160353084A1

    公开(公告)日：2016-12-01

    申请号：US14721424

    申请日：2015-05-26

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Tianjia Sun ,  Rui Wang ,  Tiejun Dai

    IPC: H04N13/02 ,  H04N5/374 ,  G01S7/486 ,  G06T7/00

    CPC classification number: H04N13/254 ,  G01S7/4816 ,  G01S7/4863 ,  G01S7/4865 ,  G01S7/497 ,  G01S17/89 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14634 ,  H04N5/374 ,  H04N13/211 ,  H04N2013/0081

    Abstract: A time of flight sensor includes control circuitry and a time of flight pixel array. The control circuitry is coupled to synchronously send a sync signal. The time of flight pixel array includes a plurality of time of flight pixel cells. Each one of the time of flight pixel cells includes a photosensor and a delay circuit. The photosensor is configured to generate an image signal in response to receiving photons from a light pulse reflected from an object. The delay circuit is coupled to generate a delayed sync signal in response to the sync signal. The delay circuit includes a delay transistor. The time of flight pixel array includes a transistor gradient where a transistor gate length of the delay transistor varies so that each of the time of flight pixel cells receive their respective delayed sync signal at a same time.

    Abstract translation: 飞行时间传感器包括控制电路和飞行时间像素阵列。 控制电路被耦合以同步地发送同步信号。 飞行时间像素阵列包括多个飞行时间像素单元。 飞行时间像素单元中的每一个包括光电传感器和延迟电路。 光传感器被配置为响应于从对象反射的光脉冲接收光子而产生图像信号。 延迟电路被耦合以响应于同步信号产生延迟的同步信号。 延迟电路包括延迟晶体管。 飞行时间像素阵列包括晶体管梯度，其中延迟晶体管的晶体管栅极长度变化，使得每个飞行时间像素单元同时接收它们各自的延迟同步信号。

    NEGATIVE BIASED SUBSTRATE FOR PIXELS IN STACKED IMAGE SENSORS
    30.
    发明申请
    NEGATIVE BIASED SUBSTRATE FOR PIXELS IN STACKED IMAGE SENSORS 有权
    堆叠式图像传感器中的像素的负偏移基板

    公开(公告)号：US20160037111A1

    公开(公告)日：2016-02-04

    申请号：US14448154

    申请日：2014-07-31

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Tiejun Dai ,  Rui Wang ,  Dyson H. Tai ,  Sohei Manabe

    IPC: H04N5/378 ,  H01L27/146 ,  H04N5/376

    CPC classification number: H04N5/378 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H04N5/376

    Abstract: A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.

    Abstract translation: 像素单元包括设置在第一半导体芯片内的光电二极管，用于响应入射在光电二极管上的光累积图像电荷。 传输晶体管设置在第一半导体芯片内并耦合到光电二极管以从光电二极管传输图像电荷。 偏置电压产生电路，设置在第二半导体芯片内，用于产生偏置电压。 偏置电压产生电路耦合到第一半导体芯片以偏置偏压的光电二极管。 偏置电压相对于第二半导体芯片的接地电压为负。 浮置扩散部设置在第二半导体芯片内。 传输晶体管被耦合以将图像电荷从第一半导体芯片上的光电二极管转移到第二半导体芯片上的浮动扩散。

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