公开(公告)号：US20220406757A1

公开(公告)日：2022-12-22

申请号：US17638710

申请日：2020-08-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Tobias Meyer ,  Korbinian Perzlmaier ,  Thomas Schwarz ,  Sebastian Hoibl

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: In an embodiment a method for producing radiation-emitting semiconductor chips includes providing a semiconductor wafer, applying first contact layers on the semiconductor wafer, applying a second dielectric layer on the semiconductor wafer and the first contact layers, attaching a carrier arrangement to the semiconductor wafer, singulating the semiconductor wafer into semiconductor bodies and applying second contact layers on the semiconductor bodies, wherein the second dielectric layer is formed such that it mechanically stabilizes itself.

公开(公告)号：US11296265B2

公开(公告)日：2022-04-05

申请号：US16606538

申请日：2018-04-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Rudolf Behringer ,  Alexander F. Pfeuffer ,  Andreas Plößl ,  Georg Bogner ,  Berthold Hahn ,  Frank Singer

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  A41D13/01 ,  A62B17/00

Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.

公开(公告)号：US11081620B2

公开(公告)日：2021-08-03

申请号：US16466658

申请日：2017-12-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plössl ,  Norwin von Malm ,  Dominik Scholz ,  Christoph Schwarzmaier ,  Martin Rudolf Behringer ,  Alexander F. Pfeuffer

IPC: H01L33/00

Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.

公开(公告)号：US20200058629A1

公开(公告)日：2020-02-20

申请号：US16347168

申请日：2017-11-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Dominik Scholz

IPC: H01L25/16 ,  H01L27/12 ,  H01L33/38 ,  H01L33/06 ,  H01L33/42 ,  H01L33/60

Abstract: A display device is disclosed. In an embodiment a display device having a plurality of pixels separately operable from each other includes a semiconductor layer sequence including a first semiconductor layer, an active layer and a second semiconductor layer, a first contact structure contacting the first semiconductor layer and a second contact structure contacting the second semiconductor layer and at least one separating region extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, wherein the semiconductor layer sequence and the first contact structure have at least one first recess laterally adjacent with respect to a respective pixel, the first recess extending through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure includes second contacts extending through the at least one first recess.

公开(公告)号：US10475778B2

公开(公告)日：2019-11-12

申请号：US15578240

申请日：2016-05-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Norwin von Malm ,  Stefan Grötsch ,  Andreas Plößl

IPC: H01L29/04 ,  H01L25/18 ,  H01L33/08 ,  H01L33/62 ,  H01L33/64 ,  H01L25/00 ,  H01L27/12 ,  H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/32

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a semiconductor chip subdivided into a plurality of pixels, the pixels being arranged next to one another in a lateral direction and being configured to be activated individually and independently and a metallic connecting element having an upper side and an underside, the connecting element including a contiguous metallic connecting layer, which is completely passed through by a plurality of first metallic through-connections arranged next to one another in the lateral direction, wherein the first through-connections are electrically insulated and spaced from the connecting layer by insulating regions, wherein each first through-connection is unambiguously assigned to one pixel, is electrically-conductively connected to this pixel and forms a first electrical contact to this pixel, and wherein the semiconductor chip is connected by the connecting element to a carrier.

公开(公告)号：US20190252577A1

公开(公告)日：2019-08-15

申请号：US16316973

申请日：2017-07-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Alexander F. Pfeuffer

IPC: H01L33/08 ,  H01L27/15 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L33/08 ,  H01L27/156 ,  H01L33/382 ,  H01L33/387 ,  H01L33/62

Abstract: An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment, a chip includes a semiconductor body comprising a plurality of emission regions, first and second contact points, a rewiring structure and first and second connection points, wherein each emission region is contacted via the first and second contact points and configured to be operated separately from one another, wherein the rewiring structure electrically conductively connects each first contact point to an associated first connection point, wherein the rewiring structure electrically conductively connects every second contact point to an associated second connection point, wherein at least one of the connection points does not overlap with a contact point which is electrically conductively connected to this connection point in a vertical direction, and wherein each first connection point is disposed laterally directly adjacent to a further first connection point.

公开(公告)号：US10361249B2

公开(公告)日：2019-07-23

申请号：US15578239

申请日：2016-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer ,  Dominik Scholz

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/62 ,  H01L33/24

Abstract: A display device having a plurality of pixels is disclosed. In an embodiment the display includes a semiconductor layer sequence and a first contact structure for contacting a first semiconductor layer and a second contact structure for contacting a second semiconductor layer, wherein the first contact structure has first contacts configured to be operated separately from one another, each first contact extending laterally and uninterrupted along the first semiconductor layer within an associated pixel and each first contact delimits the pixel in a lateral manner with its contour, wherein the semiconductor layer sequence and the first contact structure have at least one recess laterally bordering a respective pixel, which recess extends through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure has second contacts extending through the at least one recess.

公开(公告)号：US20190165215A1

公开(公告)日：2019-05-30

申请号：US16092480

申请日：2017-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander F. Pfeuffer

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/44

Abstract: An optoelectronic semiconductor chip includes a semiconductor body including an n-conducting region, a p-conducting region and an active region between the n-conducting region and the p-conducting region; a first mirror containing a first metallic layer, and a p-metallization containing a second metallic layer, wherein during operation of the semiconductor chip, the first mirror is not at the same electrical potential as the p-conducting region, during operation of the semiconductor chip, the p-metallization is at the same electrical potential as the p-conducting region, and the first mirror has at least one opening through which the p-metallization is electrically conductively connected to the p-conducting region.

公开(公告)号：US20180331251A1

公开(公告)日：2018-11-15

申请号：US15774960

申请日：2016-11-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Scholz ,  Alexander F. Pfeuffer

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/40

CPC classification number: H01L33/0075 ,  H01L27/153 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, a component includes a semiconductor layer sequence including a first main side, a first layer, an active layer, a second layer and a second main side, a first contact element arranged on the second main side filling a recess in the semiconductor layer sequence, wherein the recess extends from the second main side through the second layer and the active layer and opens out into the first layer and a second contact element arranged on the second main side, the second contact element being arranged laterally next to the recess in a plan view of the second main side, wherein the first contact element comprises a first transparent intermediate layer, a metallic first mirror layer and a metallic injection element.

公开(公告)号：US20170179091A1

公开(公告)日：2017-06-22

申请号：US15304917

申请日：2015-04-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Isabel Otto ,  Alexander F. Pfeuffer

IPC: H01L25/16 ,  H01L33/62 ,  H01L33/40 ,  H01L25/00 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L25/167 ,  H01L25/50 ,  H01L27/1214 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405 ,  H01L33/62

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence with an upper face and a lower face opposite the upper face, wherein the semiconductor layer sequence has an active layer that generates electromagnetic radiation, and a plurality of contact elements that electrically contact the semiconductor layer sequence arranged on the upper face, wherein the semiconductor chip is a thin-film semiconductor chip, the lower face is a radiation decoupling surface through which the radiation generated in the semiconductor layer sequence is decoupled, the contact elements can be electrically actuated individually and independently from one another, and the semiconductor layer sequence has a thickness of at most 3 μm.