Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
    22.
    发明授权
    Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method 有权
    制造薄膜体声共振器(FBAR)的方法和体现该方法的FBAR结构

    公开(公告)号:US06714102B2

    公开(公告)日:2004-03-30

    申请号:US09798496

    申请日:2001-03-01

    CPC classification number: H03H3/02

    Abstract: A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is fabricated on the substrate spanning the depression, the FBAR having an etch hole. The depression may include etch channels in which case the FBAR may include etch holes aligned with the etch channels. A resonator resulting from the application of the technique is suspended in air and includes at least one etch hole and may include etch channels.

    Abstract translation: 一种用于在衬底上制造声共振器的方法,例如薄膜体声波谐振器(FBAR)。 蚀刻凹陷并填充牺牲材料。 FBAR制造在跨越凹陷的衬底上,FBAR具有蚀刻孔。 凹陷可以包括蚀刻通道,在这种情况下,FBAR可以包括与蚀刻通道对准的蚀刻孔。 由施加该技术产生的共振器悬浮在空气中并且包括至少一个蚀刻孔,并且可以包括蚀刻通道。

    Duplexer incorporating thin-film bulk acoustic resonators (FBARs)
    25.
    发明授权
    Duplexer incorporating thin-film bulk acoustic resonators (FBARs) 有权
    掺入薄膜体声共振器(FBAR)的双工器

    公开(公告)号:US06262637B1

    公开(公告)日:2001-07-17

    申请号:US09324618

    申请日:1999-06-02

    CPC classification number: H03H9/568 H03H9/706

    Abstract: An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).

    Abstract translation: 一种基于FBAR的双工器,包括连接在第一端口和第三端口之间的第一端口,第二端口,第三端口,第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。 第一带通滤波器包括具有并联和串联元件的第一梯形电路。 第一梯形电路的每个元件包括膜体声波谐振器(FBAR)。 串联电路包括与第二带通滤波器串联的90°移相器。 第二带通滤波器包括具有分路和串联元件的第二梯形电路。 第二梯形电路的每个元件包括膜体声波谐振器。 一种带通滤波器,包括并联元件和串联元件,其中串联元件和分流元件连接以形成梯形电路,并且每个元件包括膜体声波谐振器(FBAR)。

    Thermally actuated optical fiber switch
    26.
    发明授权
    Thermally actuated optical fiber switch 失效
    热致动光纤开关

    公开(公告)号:US5446811A

    公开(公告)日:1995-08-29

    申请号:US212543

    申请日:1994-03-14

    Abstract: A micromachined device for selectively switching an optical fiber between a first and a second position includes a working leg that undergoes a greater degree of thermal expansion than a second leg with the conduction of an electrical current through the two legs. In a preferred embodiment, the working leg has a cross-sectional area that is less than that of the second leg, thereby presenting a greater electrical resistance to the current flow. The legs are each fixed to a substrate at first ends and are interconnected at second ends that are free to move relative to the substrate. The difference in electrical resistance provides a differential in thermal expansion, as the working leg lengthens to a greater degree than the second leg. The working leg deforms the second leg and the optical fiber is pressed into a second position until current flow is terminated. In another embodiment, the differential in thermal expansion is created by ensuring that the second leg has less thermal isolation from the substrate than the thermal isolation of the working leg from the substrate.

    Abstract translation: 用于在第一位置和第二位置之间选择性地切换光纤的微机械加工装置包括经过两条腿的电流传导而经受比第二腿部更大程度的热膨胀的工作腿部。 在优选实施例中,工作腿的横截面积小于第二腿的横截面积,从而对电流呈现更大的电阻。 腿在第一端各自固定到基底,并且在相对于基底自由移动的第二端处互连。 电阻的差异提供了热膨胀的差异,因为工作腿比第二条腿更大程度地延长。 工作腿使第二腿变形,并将光纤压入第二位置,直到电流流动终止。 在另一个实施例中,热膨胀差异是通过确保第二支腿与工作支脚与基板的热隔离相比具有比基板更小的热隔离来产生的。

    Resonator device including electrodes with buried temperature compensating layers
    27.
    发明授权
    Resonator device including electrodes with buried temperature compensating layers 有权
    谐振器器件包括具有埋入温度补偿层的电极

    公开(公告)号:US09197185B2

    公开(公告)日:2015-11-24

    申请号:US13601384

    申请日:2012-08-31

    CPC classification number: H03H3/04 H03H9/02102 H03H9/131 H03H9/173 H03H9/175

    Abstract: An acoustic resonator includes a substrate and a first composite electrode disposed over the substrate. The first composite electrode includes first and second electrically conductive layers and a first temperature compensating layer disposed between the first and second electrically conductive layers. The second electrically conductive layer forms a first electrical contact with the first electrically conductive layer on at least one side of the first temperature compensating layer, and the first electrical contact electrically shorts a first capacitive component of the first temperature compensating layer.

    Abstract translation: 声谐振器包括衬底和设置在衬底上的第一复合电极。 第一复合电极包括第一和第二导电层和设置在第一和第二导电层之间的第一温度补偿层。 所述第二导电层在所述第一温度补偿层的至少一侧与所述第一导电层形成第一电接触,并且所述第一电接触使所述第一温度补偿层的第一电容分量电短路。

    Bulk acoustic resonator structure comprising hybrid electrodes
    28.
    发明授权
    Bulk acoustic resonator structure comprising hybrid electrodes 有权
    包括混合电极的体声波谐振器结构

    公开(公告)号:US08390397B2

    公开(公告)日:2013-03-05

    申请号:US12748640

    申请日:2010-03-29

    CPC classification number: H03H9/584 H03H9/587 H03H9/589

    Abstract: In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed.

    Abstract translation: 根据代表性实施例,BAW谐振器结构包括第一BAW谐振器,包括:具有第一电阻的第一下电极; 具有第二电阻的第一上电极; 以及设置在第一下电极和第一上电极之间的第一压电层。 BAW谐振器结构还包括第二BAW谐振器,包括:具有第二电阻的第二下电极; 具有第一电阻的第二上电极; 以及设置在第二下电极和第二上电极之间的第二压电层。 BAW谐振器结构还包括设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层。 第一电阻小于第二电阻。 还公开了一种包括耦合谐振滤波器(CRF)的通信设备。

    Method of fabricating an acoustic resonator comprising a filled recessed region
    29.
    发明授权
    Method of fabricating an acoustic resonator comprising a filled recessed region 有权
    制造包括填充凹陷区域的声谐振器的方法

    公开(公告)号:US08230562B2

    公开(公告)日:2012-07-31

    申请号:US11938078

    申请日:2007-11-09

    Abstract: A method for fabricating an acoustic resonator comprises providing a substrate; fabricating a first electrode adjacent the substrate; fabricating a piezoelectric layer adjacent the first electrode; depositing electrode material to form a second electrode up to a first thickness adjacent the piezoelectric layer; depositing a first photo mask over the second electrode; depositing additional electrode material to form the second electrode up to a second thickness; removing the photo mask thereby forming a recessed region in the second electrode; and filling the recessed region with a fill material.

    Abstract translation: 一种用于制造声谐振器的方法包括:提供一个基片; 制造邻近衬底的第一电极; 制造邻近第一电极的压电层; 沉积电极材料以形成第二电极,直到邻近压电层的第一厚度; 在第二电极上沉积第一光掩模; 沉积额外的电极材料以形成第二电极直到第二厚度; 去除所述光掩模,从而在所述第二电极中形成凹陷区域; 并用填充材料填充凹陷区域。

    Adjusted frequency temperature coefficient resonator
    30.
    发明授权
    Adjusted frequency temperature coefficient resonator 有权
    调节频率温度系数谐振​​器

    公开(公告)号:US07868522B2

    公开(公告)日:2011-01-11

    申请号:US11223386

    申请日:2005-09-09

    Inventor: Richard C. Ruby

    Abstract: A temperature compensated pair of resonators. The temperature compensated pair of resonators comprises a first resonator configured to resonate at a first frequency and having a first frequency temperature coefficient and a second resonator configured to resonate at a second frequency and having a second frequency temperature coefficient. The second frequency is greater than the first frequency; the second frequency temperature coefficient is less than the first frequency temperature coefficient; and the first and the second resonators are fabricated on a common substrate.

    Abstract translation: 一个温度补偿的谐振器对。 温度补偿对谐振器包括被配置为以第一频率谐振并具有第一频率温度系数的第一谐振器和被配置为以第二频率谐振并具有第二频率温度系数的第二谐振器。 第二频率大于第一频率; 第二频率温度系数小于第一频率温度系数; 并且第一和第二谐振器被制造在公共衬底上。

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