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公开(公告)号：US08222650B2
公开(公告)日：2012-07-17
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： H01L27/15
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US20080182092A1
公开(公告)日：2008-07-31
申请号：US12015957
申请日：2008-01-17
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density≦100 cm−2 Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有实际平面缺陷密度<= 100cm 2的氮化铝（AlN）的单体单晶生长单晶氮化铝的方法包括熔融铝箔以均匀地湿一层基底 铝，形成AlN种子保持器的一部分的基底，用于AlN种子用于AlN生长。 保持器可以基本上由基本上不可渗透的背板组成。
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公开(公告)号：US11384449B2
公开(公告)日：2022-07-12
申请号：US16817876
申请日：2020-03-13
IPC分类号： C30B25/10 , C30B29/40 , H01S5/02 , H01S5/343 , C30B23/00 , C30B33/06 , H01L21/20 , H01L33/06 , H01L33/00
摘要： In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.
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公开(公告)号：US10697085B2
公开(公告)日：2020-06-30
申请号：US16160158
申请日：2018-10-15
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm=2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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公开(公告)号：US20170191184A1
公开(公告)日：2017-07-06
申请号：US15463536
申请日：2017-03-20
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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公开(公告)号：US09624601B2
公开(公告)日：2017-04-18
申请号：US14458861
申请日：2014-08-13
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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27.发明授权公开(公告)号：US08545629B2
公开(公告)日：2013-10-01
申请号：US11431090
申请日：2006-05-09
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
IPC分类号： H01L49/00
CPC分类号： C30B25/16 , C30B11/003 , C30B23/00 , C30B23/025 , C30B25/10 , C30B25/14 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02634 , H01L29/04 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/66462 , H01L29/7787 , H01L33/0075 , H01L33/025 , H01L33/12 , H01L33/325 , H01L2924/0002 , Y10T428/21 , H01L2924/00
摘要： Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
摘要翻译： 具有直径大于约25mm的AlN的大体积单晶和约10,000cm-2或更小的位错密度以及具有由这些本体晶体制造的任何所需晶体取向表面的高质量AlN衬底。
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公开(公告)号：US20100135349A1
公开(公告)日：2010-06-03
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US11939700B2
公开(公告)日：2024-03-26
申请号：US17496867
申请日：2021-10-08
申请人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
发明人： Robert T. Bondokov , James R. Grandusky , Jianfeng Chen , Shichao Wang , Toru Kimura , Thomas Miebach , Keisuke Yamaoka , Leo J. Schowalter
IPC分类号： C30B29/40 , C30B23/06 , C30B33/02 , H01L33/32 , C01B21/072
CPC分类号： C30B29/403 , C30B23/066 , C30B33/02 , H01L33/32 , C01B21/072 , C01P2006/60
摘要： In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
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公开(公告)号：US09670591B2
公开(公告)日：2017-06-06
申请号：US14458825
申请日：2014-08-13
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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