公开(公告)号：US20080081423A1

公开(公告)日：2008-04-03

申请号：US11541429

申请日：2006-09-29

申请人： Laurence P. Sadwick ,  Mohammad M. Mojarradi ,  Ruey-Jen Hwu ,  Jehn-Huar Chern

发明人： Laurence P. Sadwick ,  Mohammad M. Mojarradi ,  Ruey-Jen Hwu ,  Jehn-Huar Chern

IPC分类号： H01L21/336

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/27 ,  H01L24/28 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L24/82 ,  H01L24/83 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2221/68322 ,  H01L2224/24137 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2224/83101 ,  H01L2224/8385 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15787 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19043 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention includes processes and packaging for high voltage integrated circuits (ICs), high voltage electronic devices and high voltage electronic circuits which operate over a wide range of voltages, e.g., from tens of volts to tens of thousands of volts. The inventive processes and packaging are particularly suitable for integrating low or lower voltage circuits or transistors to form high voltage ICs, high voltage electronic devices and high voltage electronic circuits. The inventive processes and packaging are also particularly suitable for isolating high voltage electronics to achieve high breakdown voltages and for supporting high voltage operation. The inventive processes may be used with any suitable semiconductor materials using conventional semiconductor fabrication and related facilities.

摘要翻译： 本发明包括用于高电压集成电路（IC），高电压电子设备和高电压电子电路的工艺和封装，其在宽范围的电压范围内工作，例如几十伏到几万伏特。 本发明的工艺和封装特别适用于集成低压或低压电路或晶体管以形成高压IC，高压电子器件和高电压电子电路。 本发明的工艺和封装也特别适用于隔离高电压电子元件以实现高击穿电压并支持高压操作。 本发明的方法可以与使用常规半导体制造和相关设施的任何合适的半导体材料一起使用。

公开(公告)号：US06501363B1

公开(公告)日：2002-12-31

申请号：US09706328

申请日：2000-11-03

申请人： Ruey-Jen Hwu ,  Jishi Ren

发明人： Ruey-Jen Hwu ,  Jishi Ren

IPC分类号： H01F500

CPC分类号： H01F27/2804 ,  H01L23/645 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01P5/02 ,  Y10T29/4902 ,  H01L2924/00

摘要： A vertical transformer that comprises a primary and a secondary winding, wherein one winding is positioned on a first plane, and the other winding is positioned on a second plane. The primary and secondary windings are separated by a dielectric substrate. In one embodiment, the primary and secondary windings are configured to use the same ground reference, and terminals in the center of each winding are connected to the ground reference by a via hole to form an in-phase transformer. In a second embodiment, a center terminal of one winding and an outbound terminal of the other winding are connected to the ground reference to form an opposite-phase transformer. In the second embodiment, a dielectric substrate is positioned between one of the windings and a ground plane.

摘要翻译： 一种垂直变压器，包括初级和次级绕组，其中一个绕组位于第一平面上，另一绕组位于第二平面上。 初级和次级绕组由电介质基片隔开。 在一个实施例中，初级和次级绕组被配置为使用相同的接地参考，并且每个绕组的中心的端子通过通孔连接到接地参考以形成同相变压器。 在第二实施例中，一个绕组的中心端子和另一个绕组的出站端子连接到接地基准以形成一个反相变压器。 在第二实施例中，电介质基板位于绕组中的一个和接地平面之间。

公开(公告)号：US20060057504A1

公开(公告)日：2006-03-16

申请号：US10941237

申请日：2004-09-15

申请人： Laurence Sadwick ,  Jehn-Huar Chern ,  Ruey-Jen Hwu ,  Jishi Ren ,  Ding Wu ,  Ching-Hsi Lin

发明人： Laurence Sadwick ,  Jehn-Huar Chern ,  Ruey-Jen Hwu ,  Jishi Ren ,  Ding Wu ,  Ching-Hsi Lin

IPC分类号： H01J25/34 ,  G03F7/00

CPC分类号： H01J25/42 ,  G03F7/2022 ,  G03F7/24 ,  H01J23/165 ,  Y10T29/53439

摘要： Embodiments of the present invention include helical, ring bar and tunnel ladder slow wave structures (SWSs). Embodiments of methods of micro-fabricating such SWSs are also disclosed. Embodiments of high frequency electromagnetic devices including such SWSs are also disclosed. Exemplary high frequency electromagnetic devices may include a traveling wave tube, a traveling wave tube amplifier, a back wave oscillator, as part of a linear accelerator, a microwave power module, a klystron or a millimeter-wave power module.

摘要翻译： 本发明的实施例包括螺旋形，环形条和隧道梯形慢波结构（SWS）。 还公开了微型制造这种SWS的方法的实施例。 还公开了包括这种SWS的高频电磁装置的实施例。 示例性的高频电磁装置可以包括行波管，行波管放大器，背波振荡器，作为线性加速器的一部分，微波功率模块，速调管或毫米波功率模块。

公开(公告)号：US07067980B2

公开(公告)日：2006-06-27

申请号：US10775266

申请日：2004-02-10

申请人： Larry Sadwick ,  Ruey-Jen Hwu

发明人： Larry Sadwick ,  Ruey-Jen Hwu

IPC分类号： H01J25/34

CPC分类号： H01J23/08 ,  H01J25/10

摘要： An improved Klystron device is disclosed which has opposed electrostatic (ES) magnetic field generating members which are uniformly spaced along a longitudinal axis to form an electron beam chamber. The ES magnetic field generating members produce a magnetic flux which confines an electron beam passing through the chamber when an alternating current (AC) is imposed upon the magnetic field generating members. An additional improvement includes a chamber formed from a single sheet of electron conductive metal having a ladder-like structure symmetrical about a longitudinal hinge which permits the structure to be folded about the hinge to form a suitable electron beam chamber.

摘要翻译： 公开了一种改进的速调管装置，其具有相对于沿着纵向轴线均匀间隔开的静电（ES）磁场产生部件，以形成电子束室。 当对磁场产生部件施加交流电（AC）时，ES磁场产生部件产生限制通过室的电子束的磁通量。 另外的改进包括由单片电子导电金属形成的室，其具有梯形结构，其围绕纵向铰链对称，其允许结构围绕铰链折叠以形成合适的电子束室。

公开(公告)号：US07397175B2

公开(公告)日：2008-07-08

申请号：US11348959

申请日：2006-02-07

申请人： Ruey-Jen Hwu ,  Larry Sadwick

发明人： Ruey-Jen Hwu ,  Larry Sadwick

IPC分类号： H01J1/46 ,  H01J21/10

CPC分类号： H01J1/46 ,  H01J1/13 ,  H01J3/027 ,  H01J19/38 ,  H01J21/105

摘要： A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises a cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

摘要翻译： 固态真空装置（SSVD）及其制造方法。 在一个实施例中，SSVD形成三极管器件，其包括其中形成有腔的衬底。 SSVD还包括位于空腔开口附近的阴极，其中阴极以桥形式跨越空腔，在阴极和衬底之间产生气隙。 另外，SSVD还包括位于阳极和阴极之间的阳极和栅极。 在向阴极施加热量时，电子从阴极释放，通过栅格并被阳极接收。 响应于接收电子，阳极产生电流。 由阳极接收的电流由施加到电网的电压控制。 本发明的其它实施例提供二极管，四极管，五极管和其它高阶器件配置。

公开(公告)号：US06259713B1

公开(公告)日：2001-07-10

申请号：US09256379

申请日：1999-02-24

申请人： Ruey-Jen Hwu ,  XuDong Wang

发明人： Ruey-Jen Hwu ,  XuDong Wang

IPC分类号： H01S5024

CPC分类号： G02B19/0057 ,  G02B19/0023 ,  G02B19/0028 ,  G02B19/009 ,  G02B27/09 ,  G02B27/0983 ,  G02B27/108 ,  G02B27/1093 ,  G02B27/143 ,  H01S5/02252 ,  H01S5/02292 ,  H01S5/0267 ,  H01S5/18 ,  H01S5/42

摘要： An apparatus for providing improved high power laser beams. An elongated reflector with a highly-reflective surface is utilized with a laser beam emitter, such as a broad area diode laser, a diode laser bar, or a diode laser array. The laser beams reflect off of the highly-reflective surface which is curved substantially parabolically. The reflected beams are collimated or otherwise shaped and/or coupled by manipulation of the size and shape of the elongated reflector and the placement of the laser beam emitter in association therewith. A system of lenses or mirrors may be used in conjunction with the reflecting apparatus to achieve enhanced beam quality. One-dimensional and two-dimensional laser arrays can also be fabricated utilizing a substrate containing laser beam emitters in communication with one or more grooves formed in the substrate, with parabolic reflecting surfaces formed in the grooves or with optical reflector members placed in the grooves.

摘要翻译： 一种用于提供改进的高功率激光束的装置。 具有高反射表面的细长反射体与诸如广域二极管激光器，二极管激光棒或二极管激光器阵列的激光束发射器一起使用。 激光束从基本上抛物线弯曲的高反射表面反射出来。 通过操纵细长反射器的尺寸和形状以及与之相关联的激光束发射器的放置，反射的光束被准直或以其它方式成形和/或耦合。 透镜或反射镜的系统可以与反射装置结合使用以实现增强的光束质量。 还可以使用包含与衬底中形成的一个或多个凹槽连通的激光束发射器的衬底来制造一维和二维激光器阵列，其中形成在凹槽中的抛物面反射表面或放置在凹槽中的光学反射器构件。

公开(公告)号：US6002703A

公开(公告)日：1999-12-14

申请号：US15488

申请日：1998-01-28

申请人： Ruey-Jen Hwu ,  Wei Xu

发明人： Ruey-Jen Hwu ,  Wei Xu

IPC分类号： H01S3/00 ,  H01S5/10 ,  H01S5/14 ,  H01S3/08

CPC分类号： H01S5/14 ,  H01S2301/20 ,  H01S3/08059 ,  H01S5/1082

摘要： A system and method for generating a laser beam from a semiconductor laser in order to eliminate or substantially reduce filamentation of the laser beam. The system and method utilizes an external optical member such as a reflector to improve or enhance the overall laser beam quality produced. The reflector has a Gaussian intensity profile promoting cavity such as a parabolic cavity, with the cavity having a focal length a preselected distance from the cavity surface. The semiconductor laser is positioned such that the facet of the semiconductor laser is at the focal length distance from the cavity surface. The cavity has a mode-selecting reflective surface such that the beam has a substantially Gaussian intensity profile. A beam splitter can be optionally employed between the semiconductor laser and the optical reflector for certain applications if desired. Alternatively, an external digital optics member can be employed with a semiconductor laser to produce a beam with a substantially Gaussian intensity profile.

摘要翻译： 用于从半导体激光器产生激光束以消除或基本上减少激光束的光纤的系统和方法。 该系统和方法利用诸如反射器的外部光学构件来改善或增强所产生的整体激光束质量。 反射器具有高斯分布促进空腔，例如抛物面空腔，空腔具有与空腔表面预定距离的焦距。 半导体激光器被定位成使得半导体激光器的刻面处于与腔表面的焦距距离。 空腔具有模式选择反射表面，使得光束具有基本上高斯强度分布。 如果需要，可以在半导体激光器和光学反射器之间任选地采用分束器用于某些应用。 或者，外部数字光学元件可以与半导体激光器一起使用以产生具有基本高斯强度分布的光束。

公开(公告)号：US07142568B2

公开(公告)日：2006-11-28

申请号：US10768426

申请日：2004-01-29

申请人： Ruey-Jen Hwu

发明人： Ruey-Jen Hwu

IPC分类号： H01S3/098

CPC分类号： H01S5/14 ,  G02F1/37 ,  G02F2001/372 ,  H01S5/141 ,  H01S5/2036 ,  H01S2301/18

摘要： A device for generating blue or green laser light, comprising an infrared high power semiconductor laser or an infrared high power semiconductor laser bar or array, a diffractive optical device, and an optical device utilizing a non-linear crystal to generate the blue or green laser light.

摘要翻译： 一种用于产生蓝色或绿色激光的装置，包括红外高功率半导体激光器或红外高功率半导体激光棒或阵列，衍射光学装置和利用非线性晶体产生蓝色或绿色激光的光学装置 光。

公开(公告)号：US20060057505A1

公开(公告)日：2006-03-16

申请号：US10941689

申请日：2004-09-15

申请人： Laurence Sadwick ,  Jehn-Huar Chern ,  Ruey-Jen Hwu

发明人： Laurence Sadwick ,  Jehn-Huar Chern ,  Ruey-Jen Hwu

IPC分类号： H01P11/00

CPC分类号： H01J23/165 ,  H01J25/42

摘要： Vacuum compatible high frequency electromagnetic and millimeter wave source components, devices and methods of micro-fabricating such components and devices are disclosed. Embodiments of the methods may include using a UV-curable photoresist, such as SU-8 to form structures having height up to and exceeding 1 mm. High frequency electromagnetic wave sources including the inventive high frequency electromagnetic wave source components are also disclosed.

公开(公告)号：US06414973B1

公开(公告)日：2002-07-02

申请号：US09652490

申请日：2000-08-31

申请人： Ruey-Jen Hwu ,  John M. Worlock ,  Mike Willis ,  Robert Gwynn

发明人： Ruey-Jen Hwu ,  John M. Worlock ,  Mike Willis ,  Robert Gwynn

IPC分类号： H01S3098

CPC分类号： H01S5/14 ,  G02F1/37 ,  G02F2001/372 ,  H01S5/141 ,  H01S5/2036 ,  H01S2301/18

摘要： A device for generating blue or green laser light by the use of a device comprising an infrared high power semiconductor laser or an infrared high power semiconductor laser bar or array, a diffractive optical device, and an optical device utilizing a non-linear crystal to generate the blue or green laser light. In one embodiment, the diffractive optical device comprises a volume holographic transmission grating and the optical device comprises a ring resonator. In another embodiment, the diffractive optical device comprises a reflective diffraction grating feedback mechanism and the optical device comprises a ring resonator. In another embodiment, the optical device comprises a parabolic or non-planar feedback mechanism and a ring resonator. In another embodiment, the diffractive optical feedback device, which can be in the form of digital/binary optics, is attached to the semiconductor laser source. In yet another embodiment, the diffractive optical device comprises a hybrid lens comprising a plano-convex lens and a diffractive device, which also can be in the form of digital/binary optics, attached thereto. And in yet another embodiment, a pump configuration is used to amplify a corrected single mode laser beam with higher input power of laser bar or array to feed a nonlinear material to create a very high-powered blue or green laser beam. The above-described embodiments for generating continuous blue or green laser light provide a reliable, low-cost device having a relatively simple construction.

摘要翻译： 一种用于通过使用包括红外高功率半导体激光器或红外高功率半导体激光棒或阵列的装置产生蓝色或绿色激光的装置，衍射光学装置和利用非线性晶体产生的光学装置 蓝色或绿色激光。 在一个实施例中，衍射光学器件包括体积全息透射光栅，并且光学器件包括环形谐振器。 在另一个实施例中，衍射光学器件包括反射衍射光栅反馈机构，光学器件包括环形谐振器。 在另一个实施例中，光学装置包括抛物面或非平面反馈机构和环形谐振器。 在另一个实施例中，可以是数字/二进制光学形式的衍射光学反馈装置附着到半导体激光源。 在另一个实施例中，衍射光学器件包括混合透镜，其包括平凸透镜和衍射装置，其也可以是数字/二进制光学器件的形式，附接到其上。 并且在另一个实施例中，泵配置用于放大具有较高输入功率的激光棒或阵列的校正单模激光束，以馈送非线性材料以产生非常高功率的蓝光或绿光激光束。 用于产生连续的蓝色或绿色激光的上述实施例提供了具有相对简单结构的可靠的低成本装置。