公开(公告)号：US10741518B2

公开(公告)日：2020-08-11

申请号：US16698117

申请日：2019-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youn Ji Min ,  Seokhyun Lee ,  Jongyoun Kim ,  Kyoung Lim Suk ,  SeokWon Lee

IPC: H01L23/538 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L21/78 ,  H01L23/31 ,  H01L25/10 ,  H01L21/683 ,  H01L23/498

Abstract: A semiconductor package includes: a redistribution substrate; a semiconductor chip on the redistribution substrate; and an external terminal on a bottom surface of the redistribution substrate, wherein the redistribution substrate comprises: a first insulating layer including a first opening; a second insulating layer on the first insulating layer and including a second opening, wherein the second opening is positioned in the first opening in a plan view; a first barrier metal layer disposed along a sidewall of the first opening and along a sidewall of the second opening; a first redistribution conductive pattern on the first barrier metal layer; a third insulating layer on a bottom surface of the first insulating layer; and a pad penetrating the third insulating layer and electrically connecting to the first redistribution conductive pattern, wherein the external terminal is provided on the pad, wherein the second insulating layer at least partially covers a chip pad of the semiconductor chip, and the second opening at least partially exposes the chip pad, wherein, inside the second insulating layer, the first barrier metal layer is in contact with the chip pad through the second opening, and wherein the first redistribution conductive pattern has a surface roughness including protrusions extending in a range of from about 0.01 μm to about 0.5 μm, and the first insulating layer has a surface roughness smaller than the surface roughness of the first redistribution conductive pattern.

公开(公告)号：US12288780B2

公开(公告)日：2025-04-29

申请号：US17824194

申请日：2022-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Youn Choi ,  Kyoung Lim Suk ,  Wonjae Lee

IPC: H01L25/18 ,  H01L23/00 ,  H01L23/48 ,  H01L23/538 ,  H01L23/552

Abstract: A semiconductor package including: a package substrate; an interposer on the package substrate; a chip stack on the interposer, the chip stack including a plurality of first semiconductor chips that are stacked in a first direction; a second semiconductor chip on the interposer and spaced apart from the chip stack in a second direction intersecting the first direction; and a first signal pad, a second signal pad, and a power/ground pad on a top surface of the interposer, wherein the chip stack is mounted on the first signal pad, wherein the second semiconductor chip is mounted on the second signal pad, wherein the chip stack and the second semiconductor chip are connected to the power/ground pad, and wherein the power/ground pad overlaps a portion of the chip stack and a portion of the second semiconductor chip.

公开(公告)号：US12237256B2

公开(公告)日：2025-02-25

申请号：US18183062

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Lim Suk ,  Keung Beum Kim ,  Dongkyu Kim ,  Minjung Kim ,  Seokhyun Lee

IPC: H01L23/48 ,  H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H01L25/10 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: A semiconductor package includes a redistribution substrate and a semiconductor chip thereon. The redistribution substrate includes a ground under-bump pattern, signal under-bump patterns laterally spaced apart from the ground under-bump pattern, first signal line patterns disposed on the signal under-bump patterns and coupled to corresponding signal under-bump patterns, and a first ground pattern coupled to the ground under-bump pattern and laterally spaced apart from the first signal line pattern. Each of the signal and ground under-bump patterns includes a first part and a second part formed on the first part and that is wider than the first part. The second part of the ground under-bump pattern is wider than the second part of the signal under-bump pattern. The ground under-bump pattern vertically overlaps the first signal line patterns. The first ground pattern does not vertically overlap the signal under-bump patterns.

公开(公告)号：US12015018B2

公开(公告)日：2024-06-18

申请号：US18060853

申请日：2022-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeonjeong Hwang ,  Kyoung Lim Suk ,  Seokhyun Lee ,  Jaegwon Jang

IPC: H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/31 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L25/105 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2225/1035 ,  H01L2225/1058

Abstract: A semiconductor package includes a first redistribution substrate, a first semiconductor chip mounted on the first redistribution substrate, a first molding layer on the first redistribution substrate and covering a top surface and lateral surfaces of the first semiconductor chip, a second redistribution substrate on the first molding layer, and an adhesive film between the second redistribution substrate and the first molding layer. The adhesive film is spaced apart from the first semiconductor chip and covers a top surface of the first molding layer. A lateral surface of the adhesive film is coplanar with a lateral surface of the second redistribution substrate.

公开(公告)号：US12009350B2

公开(公告)日：2024-06-11

申请号：US18130760

申请日：2023-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Lim Suk ,  Seokhyun Lee

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/522 ,  H01L23/528 ,  H01L25/10

CPC classification number: H01L25/105 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/08 ,  H01L24/09 ,  H01L24/16 ,  H01L24/17 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02381 ,  H01L2224/08235 ,  H01L2224/16227 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/182

Abstract: A method of fabricating a semiconductor package includes providing a semiconductor chip, forming a redistribution substrate, and fabricating a package including the semiconductor chip disposed on the redistribution substrate. The forming of the redistribution substrate may include forming a first insulating layer on a substrate, the first insulating layer having a first opening formed therein, forming an integrally formed first redistribution pattern in the first opening and on the first insulating layer, forming a second insulating layer on the first insulating layer to cover the first redistribution pattern, and performing a planarization process on the second insulating layer to expose the first redistribution pattern.

公开(公告)号：US11810915B2

公开(公告)日：2023-11-07

申请号：US17359110

申请日：2021-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Lim Suk ,  Seokhyun Lee ,  Jaegwon Jang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L23/528 ,  H01L23/532 ,  H01L27/08 ,  H01L23/538 ,  H01L49/02

CPC classification number: H01L27/0805 ,  H01L23/5222 ,  H01L23/5386 ,  H01L24/14 ,  H01L28/60

Abstract: Disclosed is a semiconductor package including: a redistribution substrate; at least one passive device in the redistribution substrate, the passive device including a first terminal and a second terminal; and a semiconductor chip on a top surface of the redistribution substrate, the semiconductor chip vertically overlapping at least a portion of the passive device, wherein the redistribution substrate includes: a dielectric layer in contact with a first lateral surface, a second lateral surface opposite to the first lateral surface, and a bottom surface of the passive device; a lower conductive pattern on the first terminal; a lower seed pattern provided between the first terminal and the conductive pattern, and directly connected to the first terminal; a first upper conductive pattern on the second terminal and a first upper seed pattern provided between the second terminal and the first upper conductive pattern, and directly connected to the second terminal.

公开(公告)号：US11804427B2

公开(公告)日：2023-10-31

申请号：US17177305

申请日：2021-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyu Kim ,  Seokhyun Lee ,  Kyoung Lim Suk ,  Jaegwon Jang ,  Gwangjae Jeon

IPC: H01L23/498 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L23/49822 ,  H01L23/49833 ,  H01L23/49894 ,  H01L24/16 ,  H01L24/32 ,  H01L25/0657 ,  H01L2224/16227 ,  H01L2224/32225

Abstract: A semiconductor package may include a redistribution substrate, a connection terminal, and a semiconductor chip sequentially stacked. The redistribution substrate may include an insulating layer, a plurality of redistribution patterns, which are vertically stacked in the insulating layer, and each of which includes interconnection and via portions, and a bonding pad on the interconnection portion of the topmost redistribution pattern. The topmost redistribution pattern and the bonding pad may include different metallic materials. The bonding pad may have first and second surfaces opposite to each other. The first surface of the bonding pad may be in contact with a top surface of the interconnection portion of the topmost redistribution pattern. A portion of the second surface of the bonding pad may be in contact with the connection terminal. The insulating layer may be extended to be in contact with the remaining portion of the second surface.

公开(公告)号：US11694936B2

公开(公告)日：2023-07-04

申请号：US17235997

申请日：2021-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjung Kim ,  Kyoung Lim Suk ,  Seokhyun Lee

IPC: H01L21/683 ,  H01L21/66 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L22/32 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L22/12 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L2221/6835 ,  H01L2224/16227

Abstract: Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package includes a redistribution substrate that includes a chip region and an edge region around the chip region, and a semiconductor chip on the chip region of the redistribution substrate. The redistribution substrate includes a plurality of dielectric layers that are vertically stacked, a plurality of redistribution patterns on the chip region and in each of the dielectric layers, and a redistribution test pattern on the edge region and at a level the same as a level of at least one of the redistribution patterns.

公开(公告)号：US11605584B2

公开(公告)日：2023-03-14

申请号：US17329256

申请日：2021-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Lim Suk ,  Keung Beum Kim ,  Dongkyu Kim ,  Minjung Kim ,  Seokhyun Lee

IPC: H01L23/48 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L25/10 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: A semiconductor package includes a redistribution substrate and a semiconductor chip thereon. The redistribution substrate includes a ground under-bump pattern, signal under-bump patterns laterally spaced apart from the ground under-bump pattern, first signal line patterns disposed on the signal under-bump patterns and coupled to corresponding signal under-bump patterns, and a first ground pattern coupled to the ground under-bump pattern and laterally spaced apart from the first signal line pattern. Each of the signal and ground under-bump patterns includes a first part and a second part formed on the first part and that is wider than the first part. The second part of the ground under-bump pattern is wider than the second part of the signal under-bump pattern. The ground under-bump pattern vertically overlaps the first signal line patterns. The first ground pattern does not vertically overlap the signal under-bump patterns.

公开(公告)号：US10964643B2

公开(公告)日：2021-03-30

申请号：US16696759

申请日：2019-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Lim Suk ,  Seokhyun Lee

IPC: H01L23/495 ,  H01L23/538 ,  H01L23/14 ,  H01L23/00 ,  H01L25/10 ,  H01L25/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L21/683

Abstract: Insulating layers of a redistribution layer of a semiconductor package may be formed as a polymer film having inorganic fillers formed therein. The inorganic fillers may trap reactive materials to inhibit and/or substantially prevent the metal conductors, such as chip pads of the semiconductor chip being packaged, from being damaged by the reactive material. As a result, the reliability and the durability of the semiconductor package may be improved.