公开(公告)号：US20190172703A1

公开(公告)日：2019-06-06

申请号：US16273400

申请日：2019-02-12

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Manabu OKUTANI ,  Kenji KOBAYASHI ,  Naohiko YOSHIHARA

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67

Abstract: A substrate processing method includes forming a liquid film of a processing liquid covering an entire upper surface of a horizontally-held substrate; heating the substrate to make the processing liquid of the substrate evaporate to form a gas phase layer between the upper surface of the substrate and the processing liquid and maintain the liquid film on the gas phase layer; blowing a gas at a first flow rate onto the liquid film on the substrate to partially remove the processing liquid to open a hole in the liquid film; heating the substrate to spread the hole to an outer periphery of the substrate and move the liquid film on the gas phase layer to remove the processing liquid, constituting the liquid film, off the substrate; and blowing a gas at a second flow rate greater than the first flow rate onto a region of the upper surface of the substrate within the hole after the hole opening step to spread the hole to the outer periphery of the substrate and move the liquid film on the gas phase layer to remove the processing liquid, constituting the liquid film, off the substrate.

公开(公告)号：US20160372341A1

公开(公告)日：2016-12-22

申请号：US15183234

申请日：2016-06-15

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI ,  Jun SAWASHIMA ,  Akihiro NAKASHIMA

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/311 ,  H01L21/66

CPC classification number: H01L22/10 ,  H01L21/6715 ,  H01L21/67248

Abstract: The temperature of a chemical liquid supplied to a pot is detected while allowing a processing liquid discharge port to discharge the chemical liquid toward the pot at a pre-dispensing position. The temperature of the chemical liquid rises in response to the lapse of time. When the temperature of the chemical liquid supplied to the pot reaches a second target temperature, the processing liquid discharge port is allowed to stop the discharge of the chemical liquid. Thereafter, a positional relationship between the processing liquid discharge port and the pot is changed, and the processing liquid discharge port is allowed to discharge the chemical liquid toward the substrate at the processing position.

Abstract translation: 检测供给到锅的药液的温度，同时允许处理液排出口在预分配位置向化学液体排出药液。 化学液体的温度随着时间的推移而升高。 当供给到锅的化学液体的温度达到第二目标温度时，允许处理液排出口停止药液的排出。 此后，改变处理液排出口和罐之间的位置关系，并且允许处理液排出口在处理位置将化学液体排向基板。

公开(公告)号：US20160268146A1

公开(公告)日：2016-09-15

申请号：US15061095

申请日：2016-03-04

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/6715

Abstract: A substrate processing apparatus includes a processing liquid nozzle that includes a nozzle pipe within which a processing liquid flow path is defined and a discharge port to which the processing liquid flow path is opened, a processing liquid holding unit that holds the processing liquid while maintaining the processing liquid at a predetermined high temperature higher than a room temperature, a processing liquid pipe that is connected to the processing liquid holding unit and the processing liquid nozzle and that guides the processing liquid held by the processing liquid holding unit to the processing liquid nozzle and an induction heating unit that heats, by induction heating, a heating target part which is provided in at least a part of a processing liquid distribution pipe including the processing liquid pipe and the nozzle pipe and which includes a magnetic inductive member material and/or a carbon material.

Abstract translation: 基板处理装置包括处理液喷嘴，该处理液喷嘴包括其中限定有处理液流道的喷嘴管和打开处理液流路的排出口，保持处理液的处理液保持单元， 处理液体，其处于高于室温的预定高温下;处理液管，其连接到处理液保持单元和处理液喷嘴，并将由处理液保持单元保持的处理液引导到处理液喷嘴;以及 感应加热单元，其通过感应加热加热设置在包括处理液管和喷嘴管的处理液分配管的至少一部分中的加热对象部，所述加工对象部包括磁感应部件材料和/或 碳材料。

公开(公告)号：US20150279708A1

公开(公告)日：2015-10-01

申请号：US14667769

申请日：2015-03-25

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI ,  Manabu OKUTANI

IPC: H01L21/67 ,  C23C16/52 ,  H01L21/324 ,  H01L21/673 ,  H01L21/02 ,  H01L21/306 ,  C23C16/46 ,  C23C16/458

CPC classification number: H01L21/02052 ,  B08B3/022 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02057 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67303 ,  H01L21/68728 ,  H01L21/68764 ,  H01L21/68792

Abstract: A substrate treatment method is provided, which includes: an organic solvent replacing step of supplying an organic solvent, whereby a liquid film of the organic solvent is formed on the substrate as covering the upper surface of the substrate to replace a rinse liquid with the organic solvent; a substrate temperature increasing step of allowing the temperature of the upper surface of the substrate to reach a first temperature level higher than the boiling point of the organic solvent after the formation of the organic solvent liquid film, whereby a vapor film of the organic solvent is formed below the entire organic solvent liquid film between the organic solvent liquid film and the substrate to levitate the organic solvent liquid film above the organic solvent vapor film; and an organic solvent removing step of removing the levitated organic solvent liquid film from above the upper surface of the substrate.

Abstract translation: 提供了一种基板处理方法，其包括：提供有机溶剂的有机溶剂置换步骤，由此在基板上形成有机溶剂的液膜，以覆盖基板的上表面以用有机溶剂替换冲洗液 溶剂; 在形成有机溶剂液膜之后，使基板的上表面的温度达到高于有机溶剂的沸点的第一温度水平的基板升温步骤，由此有机溶剂的蒸镀膜为 在有机溶剂液膜与基板之间的整个有机溶剂液膜下方形成有机溶剂蒸气膜上方的有机溶剂液膜的悬浮液; 以及从基板的上表面上方除去悬浮的有机溶剂液膜的有机溶剂除去步骤。

公开(公告)号：US20150258553A1

公开(公告)日：2015-09-17

申请号：US14659701

申请日：2015-03-17

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI ,  Manabu OKUTANI

IPC: B05B1/24 ,  B05B15/06 ,  B05D1/02

CPC classification number: H01L21/67028 ,  B05B1/24 ,  B05B15/60 ,  B05C11/08 ,  B05D1/02 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/68728 ,  H01L21/68742 ,  H01L21/6875

Abstract: A substrate treatment method is performed by a substrate treatment apparatus including a substrate holding unit which holds a substrate, and a hot plate which heats the substrate from below. The method includes: a treatment liquid supplying step of locating the hot plate at a retracted position at which the hot plate is retracted below the substrate holding unit and, in this state, supplying a treatment liquid to an upper surface of the substrate held by the substrate holding unit; a protection liquid film forming step of forming a liquid film of a protection liquid to cover an upper surface of the hot plate in the treatment liquid supplying step; and a substrate heating step of heating the substrate by the hot plate with the hot plate being located adjacent to a lower surface of the substrate or in contact with the lower surface of the substrate.

Abstract translation: 基板处理方法由包括保持基板的基板保持单元和从下方加热基板的热板的基板处理装置进行。 该方法包括：处理液供给步骤，将热板定位在热板在基板保持单元的下方缩回的缩回位置，并且在该状态下，将处理液供给到由基板保持单元保持的基板的上表面 基板保持单元; 保护液膜形成工序，其在所述处理液供给工序中形成保护液体的液膜以覆盖所述热板的上表面; 以及基板加热步骤，其中所述热板与所述基板的下表面相邻定位或与所述基板的下表面接触，通过所述热板加热所述基板。

公开(公告)号：US20240096651A1

公开(公告)日：2024-03-21

申请号：US18523474

申请日：2023-11-29

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Shuichi YASUDA ,  Kenji KOBAYASHI

IPC: H01L21/67 ,  B01F23/40 ,  B01F23/45 ,  B01F23/454 ,  B08B3/00

CPC classification number: H01L21/67023 ,  B01F23/40 ,  B01F23/45 ,  B01F23/454 ,  B01F23/49 ,  B08B3/00 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67253 ,  B01F35/833 ,  Y10T137/0396

Abstract: First and second concentration measurement parts (415, 425) are provided in first and second supply liquid lines (412, 422) in which first and second supply liquids flow, respectively. A dissolved concentration of gas in the second supply liquid is lower than that in the first supply liquid. In the first and second supply liquid lines, respective one ends of first and second branch lines (51, 52) are connected to respective positions on the upstream side of the concentration measurement parts. The other ends of the first and second branch lines are connected to a mixing part (57), and by mixing the first and second supply liquids, a processing liquid is generated. Respective flow rate adjustment parts (58) of the first and second branch lines are controlled on the basis of respective measured values of the first and second concentration measurement parts so that the dissolved concentration of the gas in the processing liquid can become a set value. It is thereby possible to prevent the supply liquid containing particles or the like caused by the concentration measurement part from being contained into the processing liquid to be supplied to a substrate and also to adjust the dissolved concentration of the gas in the processing liquid to the set value with high accuracy.

公开(公告)号：US20210086238A1

公开(公告)日：2021-03-25

申请号：US17016379

申请日：2020-09-10

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Akira HORIKOSHI ,  Shohei NAKAMURA ,  Shigeru TAKATSUJI ,  Motohiro KONO ,  Takahiro KIMURA ,  Kenji KOBAYASHI

IPC: B08B7/00 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  B08B3/08 ,  B08B5/02 ,  B08B7/04

Abstract: A liquid film of a processing liquid containing at least one of sulfuric acid, a sulfate, peroxosulfuric acid, and a peroxosulfate, or a processing liquid containing hydrogen peroxide is formed on a substrate. A plasma is radiated to the liquid film. Thereby, a substrate processing method in which substrate processing using an oxidizing power of the processing liquid can be efficiently performed is provided.

公开(公告)号：US20210043468A1

公开(公告)日：2021-02-11

申请号：US17078146

申请日：2020-10-23

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Sei NEGORO ,  Kenji KOBAYASHI

IPC: H01L21/67 ,  B05C5/00

Abstract: One of a setting dissolved oxygen concentration and a setting atmosphere oxygen concentration is determined based on a required etching amount. Thereafter, based on the required etching amount and the one of the determined setting dissolved oxygen concentration and setting atmosphere oxygen concentration, the other of the setting dissolved oxygen concentration and the setting atmosphere oxygen concentration is determined. A low oxygen gas whose oxygen concentration is equal or approached to the determined setting atmosphere oxygen concentration flows into a chamber that houses a substrate. Furthermore, an etching liquid whose dissolved oxygen is reduced such that its dissolved oxygen concentration is equal or approached to the determined setting dissolved oxygen concentration is supplied to the entire region of the upper surface of the substrate held horizontally.

公开(公告)号：US20200035514A1

公开(公告)日：2020-01-30

申请号：US16592146

申请日：2019-10-03

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Naohiko YOSHIHARA ,  Kenji KOBAYASHI ,  Manabu OKUTANI

IPC: H01L21/67 ,  B08B3/10 ,  H01L21/687

Abstract: In parallel with a substrate heating step, a liquid surface sensor is used to monitor the raising of an IPA liquid film. An organic solvent removing step is started in response to the raising of the IPA liquid film over the upper surface of the substrate. At the end of the organic solvent removing step, a visual sensor is used to determine whether or not IPA droplets remain on the upper surface of the substrate.

公开(公告)号：US20190267257A1

公开(公告)日：2019-08-29

申请号：US16406419

申请日：2019-05-08

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Kenji KOBAYASHI ,  Jun SAWASHIMA ,  Yuta NISHIMURA ,  Akito HATANO ,  Motoyuki SHIMAI ,  Toyohide HAYASHI

IPC: H01L21/67

Abstract: A supply flow passage branches into a plurality of upstream flow passages. The plurality of upstream flow passages include a branching upstream flow passage that branches into a plurality of downstream flow passages. A plurality of discharge ports are respectively disposed at a plurality of positions differing in distance from a rotational axis and discharge processing liquids, supplied via the plurality of upstream flow passages, toward an upper surface of a substrate held by a substrate holding unit.