公开(公告)号：US20210175272A1

公开(公告)日：2021-06-10

申请号：US16948105

申请日：2020-09-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Andrew Eugene PERKINS

IPC: H01L27/146 ,  G02B3/06

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

公开(公告)号：US20180069049A1

公开(公告)日：2018-03-08

申请号：US15258783

申请日：2016-09-07

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Ulrich BOETTIGER ,  Marc Allen SULFRIDGE ,  Andrew Eugene PERKINS

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14687 ,  H01L27/14632 ,  H01L27/14806

Abstract: A semiconductor wafer has a plurality of non-rectangular semiconductor die with an image sensor region. The non-rectangular semiconductor die has a circular, elliptical, and shape with non-linear side edges form factor. The semiconductor wafer is singulated with plasma etching to separate the non-rectangular semiconductor die. A curved surface is formed in the image sensor region of the non-rectangular semiconductor die. The non-rectangular form factor effectively removes a portion of the base substrate material in a peripheral region of the semiconductor die to reduce stress concentration areas and neutralize buckling in the curved surface of the image sensor region. A plurality of openings or perforations can be formed in a peripheral region of a rectangular or non-rectangular semiconductor die to reduce stress concentration areas and neutralize buckling. A second semiconductor die can be formed in an area of the semiconductor wafer between the non-rectangular semiconductor die.

公开(公告)号：US20240038800A1

公开(公告)日：2024-02-01

申请号：US18172730

申请日：2023-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  William CROFOOT ,  Swarnal BORTHAKUR

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14645

Abstract: An image sensor may include a sensor chip that is bonded to an application-specific integrated circuit (ASIC) chip. A bond pad for the image sensor may be formed in the ASIC chip and exposed through a trench in the sensor chip. The image sensor may include a conductive light shield at a periphery of the image sensor to shield optically black pixels. An opaque layer may be formed over the conductive light shield to mitigate reflections off the conductive light shield. An anti-reflective layer may be formed over the pixel array. The anti-reflective layer may have a different thickness over the pixel array than in the trench for the bond pad.

公开(公告)号：US20230253513A1

公开(公告)日：2023-08-10

申请号：US18194714

申请日：2023-04-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Andrew Eugene PERKINS

IPC: H01L31/02 ,  H01L27/146 ,  H01L31/055 ,  H01L31/107 ,  H01L31/0232 ,  G02B3/06

CPC classification number: H01L31/02027 ,  H01L27/14605 ,  H01L31/055 ,  H01L31/107 ,  H01L27/14643 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14649 ,  H01L31/02327 ,  G02B3/06 ,  H01L27/1463 ,  H01L27/1464 ,  H04N25/63

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.

公开(公告)号：US20220181373A1

公开(公告)日：2022-06-09

申请号：US17651916

申请日：2022-02-22

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Byounghee LEE ,  Ulrich BOETTIGER

IPC: H01L27/146 ,  H01L31/107

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

公开(公告)号：US20210175265A1

公开(公告)日：2021-06-10

申请号：US16949228

申请日：2020-10-21

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Anne DEIGNAN ,  Nader JEDIDI ,  Michael Gerard KEYES

IPC: H01L27/146 ,  H01L31/107

Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

公开(公告)号：US20210151490A1

公开(公告)日：2021-05-20

申请号：US16684033

申请日：2019-11-14

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Swarnal BORTHAKUR ,  Nathan Wayne CHAPMAN

IPC: H01L27/146 ,  H01L31/107

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. During formation of the microlenses, the containment grid may prevent microlens material for adjacent SPAD pixels from merging. To ensure separation between the microlenses, the containment grid may be formed from material phobic to microlens material, or phobic material may be added over the containment grid material. Additionally, the containment grid may be formed from material that can absorb stray or off-angle light so that it does not reach the associated SPAD pixel, thereby reducing crosstalk during operation of the SPAD pixels.

公开(公告)号：US20200295069A1

公开(公告)日：2020-09-17

申请号：US16402429

申请日：2019-05-03

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Marc Allen SULFRIDGE ,  Byounghee LEE ,  Ulrich BOETTIGER

IPC: H01L27/146 ,  H01L31/107

Abstract: An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.

公开(公告)号：US20200273892A1

公开(公告)日：2020-08-27

申请号：US16460791

申请日：2019-07-02

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Andrew Eugene PERKINS ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE

IPC: H01L27/146

Abstract: An imaging system may include an image sensor with phase detection pixel groups for depth sensing or automatic focusing operations. Each phase detection pixel group may have two or more photosensitive regions covered by a single microlens so that each photosensitive region has an asymmetric angular response. The image sensor may be sensitive to both near-infrared (NIR) and visible light. Each phase detection pixel group may be designed to include light-scattering structures that increase NIR sensitivity while minimizing disruptions of phase detection and visible light performance. Deep trench isolation may be formed between adjacent photosensitive areas within the phase detection pixel group. The light-scattering structures may have a non-uniform distribution to minimize disruptions of phase detection performance.

公开(公告)号：US20180097028A1

公开(公告)日：2018-04-05

申请号：US15285197

申请日：2016-10-04

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Larry Duane KINSMAN ,  Swarnal BORTHAKUR ,  Marc Allen SULFRIDGE ,  Scott Donald CHURCHWELL ,  Brian VAARTSTRA

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.