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21.发明申请公开(公告)号：US20170008982A1
公开(公告)日：2017-01-12
申请号：US15204145
申请日：2016-07-07
发明人： Koji Hasegawa , Jun Hatakeyama , Teppei Adachi
IPC分类号： C08F128/06 , C08F116/14 , C08F124/00 , C08F116/36 , C07C69/76 , G03F7/16 , G03F7/20 , G03F7/32 , C07C69/54 , C07D307/00 , C08F116/10 , G03F7/039
CPC分类号： G03F7/0392 , C07C69/54 , C07C69/73 , C07C69/76 , C07C69/86 , C07C2601/08 , C07C2601/14 , C07C2603/74 , C07D307/00 , C08F116/10 , C08F116/14 , C08F116/36 , C08F124/00 , C08F128/06 , C08F220/18 , C08F220/30 , C08F2220/302 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0397 , G03F7/085 , G03F7/168 , G03F7/2002 , G03F7/322 , G03F7/38
摘要： A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.
摘要翻译： 在正性抗蚀剂组合物，特别是化学增强的正性抗蚀剂组合物中，使用衍生自具有两个具有羟基被酸不稳定基取代的羟基苯基的具有羟基苯基的可聚合单体的重复单元的聚合物。 抗蚀剂组合物形成抗蚀剂膜，其通过光刻加工成具有高分辨率，最小边缘粗糙度和耐蚀刻性的良好轮廓的图案。
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公开(公告)号：US20170003590A1
公开(公告)日：2017-01-05
申请号：US15196865
申请日：2016-06-29
发明人： Jun Hatakeyama , Teppei Adachi
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/22 , C08F220/24 , C08F220/28 , C08F220/30 , G03F7/0048 , G03F7/0397 , G03F7/2037 , G03F7/2041 , G03F7/38 , G03F7/40 , H01L21/0274
摘要： A resist composition is provided comprising (A) a fluorine-containing polymer, (B) a base resin, (C) an acid generator, and (D) a solvent mixture of a first solvent which is a C5-C8 ketone, C4-C6 alcohol, C3-C6 ether or C4-C9 ester and a second solvent which is a lactone ring-containing C6-C9 compound. A pattern is formed by coating the resist composition, prebake, exposure, and development. In immersion lithography, the resist film is improved in water slip. In EB or EUV lithography, outgassing is suppressed and edge roughness is reduced.
摘要翻译： 提供了抗蚀剂组合物，其包含（A）含氟聚合物，（B）基础树脂，（C）酸产生剂和（D）第一溶剂的溶剂混合物，其为C5-C8酮，C4- C 6醇，C 3 -C 6醚或C 4 -C 9酯和作为含内酯环的C 6 -C 9化合物的第二溶剂。 通过涂布抗蚀剂组合物，预烘烤，曝光和显影来形成图案。 在浸没式光刻中，防水膜在水滑动方面得到改善。 在EB或EUV光刻中，除气被抑制，边缘粗糙度降低。
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公开(公告)号：US09360760B2
公开(公告)日：2016-06-07
申请号：US14716982
申请日：2015-05-20
发明人： Jun Hatakeyama , Teppei Adachi
IPC分类号： G03F7/004 , G03F7/40 , C08L33/14 , C08L39/00 , G03F7/11 , G03F7/32 , C08F226/02 , C08F26/06 , H01L21/027 , C08F220/34 , C08F220/36 , C08F220/28 , C08F220/30 , C08F220/38
CPC分类号： G03F7/40 , C08F26/06 , C08F220/34 , C08F220/36 , C08F226/02 , C08F2220/281 , C08F2220/283 , C08F2220/301 , C08F2220/303 , C08F2220/346 , C08F2220/382 , C08L33/14 , C08L39/00 , C08L2312/06 , C09D133/14 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/32 , G03F7/325 , G03F7/405 , H01L21/0274
摘要： A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units having a tertiary amino group in a C6-C12 ether, C4-C10 alcohol, C6-C12 hydrocarbon, C6-C16 ester or C7-C16 ketone solvent, baking the coating, and removing the excessive shrink agent for thereby shrinking the size of spaces in the pattern.
摘要翻译： 通过将抗蚀剂组合物施加到基材上，使抗蚀剂膜曝光，并在有机溶剂显影剂中显影曝光的抗蚀剂膜，形成负图形。 该方法还包括用包含在C6-C12醚，C4-C10醇，C6-C12烃，C6-C16酯或C7-C16酮中具有叔氨基的重复单元的聚合物的收缩剂溶液涂覆负型图案 溶剂，烘烤涂层，并除去过量的收缩剂，从而缩小图案中的空间尺寸。
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公开(公告)号：US12072627B2
公开(公告)日：2024-08-27
申请号：US18197244
申请日：2023-05-15
发明人： Teppei Adachi , Shinya Yamashita , Masaki Ohashi , Tomohiro Kobayashi , Kenichi Oikawa , Takayuki Fujiwara
IPC分类号： G03F7/004 , C07C381/12 , C07D307/93 , C07D327/04 , C07D493/18 , C08F220/18 , G03F7/038 , G03F7/039 , G03F7/11 , G03F7/20
CPC分类号： G03F7/0045 , C07C381/12 , C07D307/93 , C07D327/04 , C07D493/18 , C08F220/1807 , C08F220/1808 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/2006 , G03F7/2041
摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
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公开(公告)号：US10310376B2
公开(公告)日：2019-06-04
申请号：US15372622
申请日：2016-12-08
发明人： Teppei Adachi , Ryosuke Taniguchi , Koji Hasegawa , Kenji Yamada
IPC分类号： G03F7/004 , G03F7/38 , C08F224/00 , G03F7/038 , G03F7/20 , G03F7/11 , C07D307/77 , C07D307/93 , C07D307/94 , C07D493/18 , C07D493/20 , C08F220/18 , C08F220/28 , G03F7/16 , G03F7/32 , G03F7/039
摘要： A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on γ-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.
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公开(公告)号：US20190064664A1
公开(公告)日：2019-02-28
申请号：US16108598
申请日：2018-08-22
摘要： A monomer and polymer having a substituent group capable of polarity switch under the action of acid are provided. A resist composition comprising the polymer forms at a high resolution a negative pattern insoluble in alkaline developer and having high etch resistance.
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公开(公告)号：US10012902B2
公开(公告)日：2018-07-03
申请号：US15434228
申请日：2017-02-16
发明人： Jun Hatakeyama , Teppei Adachi , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/039 , G03F7/40 , G03F7/20 , G03F7/32 , C07C381/12 , H01L21/027 , G03F7/11 , C08F220/30 , C08F220/34 , C08F220/38 , G03F7/16 , G03F7/38 , C08F220/28
CPC分类号： G03F7/039 , C07C381/12 , C08F220/30 , C08F220/34 , C08F220/38 , C08F2220/281 , C08F2220/282 , C08F2220/301 , C08F2220/302 , C08F2220/303 , C08F2220/382 , C08F2220/385 , C08F2800/10 , G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/0397 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/2002 , G03F7/2004 , G03F7/2037 , G03F7/2039 , G03F7/2059 , G03F7/32 , G03F7/325 , G03F7/327 , G03F7/38 , G03F7/40 , H01L21/0274
摘要： A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.
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公开(公告)号：US20160363866A1
公开(公告)日：2016-12-15
申请号：US15176967
申请日：2016-06-08
发明人： Jun Hatakeyama , Teppei Adachi
CPC分类号： G03F7/38 , B05D1/005 , B05D3/007 , B05D3/0433 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , C08L33/16 , C08L2205/025 , G03F7/0046 , G03F7/0048 , G03F7/0397 , G03F7/11 , G03F7/168 , G03F7/2041 , G03F7/26 , G03F7/32 , H01L21/0274 , H01L21/3081
摘要： A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced.
摘要翻译： 通过涂布含有含氟聚合物，基础树脂，酸产生剂和有机溶剂的抗蚀剂组合物形成图案，在50-300℃下，在沸点为 60-250摄氏度，暴露和发育。 在浸渍光刻中，抗蚀剂膜的防水性和水滑动性得到改善，图案形成后的LWR降低。 在EB或EUV光刻中，除气被抑制，LWR降低。
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公开(公告)号：US20160229940A1
公开(公告)日：2016-08-11
申请号：US15015554
申请日：2016-02-04
发明人： Jun Hatakeyama , Teppei Adachi , Kenji Funatsu
IPC分类号： C08F236/02 , C08F222/14 , C08F222/10 , G03F7/30 , C08F216/16 , G03F7/038 , G03F7/16 , G03F7/20 , C08F224/00 , C08F216/10
CPC分类号： C08F236/02 , C08F220/28 , C08F228/02 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers in a solution of a non-polymerizable compound containing a nitrogen atom to which an acid labile group is bound. This prevents deprotection reaction of the acid labile group in the case of positive resist-forming polymer or crosslinking reaction in the case of negative resist-forming polymer.
摘要翻译： 具有与主链结合的酸产生物的重复单元的聚合物和具有任选的酸不稳定基团取代的羧基的重复单元和/或具有任选的酸不稳定基取代的羟基的重复单元通过将相应的单体在 含有酸不稳定基团所结合的氮原子的不可聚合化合物的溶液。 在形成负性抗蚀剂的聚合物的情况下，可以防止酸性不稳定基团在正性抗蚀剂形成聚合物或交联反应的情况下的脱保护反应。
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30.发明申请PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK 审中-公开光电隔离膜，电阻图案形成工艺，以及制作光刻胶的方法公开(公告)号：US20160147142A1
公开(公告)日：2016-05-26
申请号：US14943331
申请日：2015-11-17
CPC分类号： G03F1/78 , G03F1/20 , G03F1/80 , G03F7/0046 , G03F7/0392
摘要： A photomask blank has a chemically amplified positive resist film comprising (A) a polymer comprising recurring units having a specific substituent group on aromatic ring and recurring units having at least one fluorine atom, (B) a base resin which is decomposed under the action of acid to increase its solubility in alkaline developer, (C) an acid generator, and (D) a basic compound. The resist film is improved in age stability and antistatic film-receptivity.
摘要翻译： 光掩模坯料具有化学放大正型抗蚀剂膜，其包含（A）包含在芳香环上具有特定取代基的重复单元和具有至少一个氟原子的重复单元的聚合物，（B）在具有至少一个氟原子的作用下分解的基础树脂 酸，以增加其在碱性显影剂中的溶解度，（C）酸产生剂，和（D）碱性化合物。 抗蚀剂膜的年龄稳定性和抗静电感光度得到改善。
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