公开(公告)号：US11469367B2

公开(公告)日：2022-10-11

申请号：US17043456

申请日：2019-03-22

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Guillaume Besnard ,  Yann Sinquin

IPC: H01L21/30 ,  H01L41/335 ,  H01L41/27 ,  H01L41/312 ,  H01L45/00

Abstract: A method for separating a removable composite structure using a light flux includes supplying the removable composite structure, which successively comprises: a substrate that is transparent to the light flux; an optically absorbent layer for at least partially absorbing a light flux; a sacrificial layer adapted to dissociate subject to the application of a temperature higher than a dissociation temperature and made of a material different from that of the optically absorbent layer; and at least one layer to be separated. The method further includes applying a light flux through the substrate, the light flux being at least partly absorbed by the optically absorbent layer, so as to heat the optically absorbent layer; heating the sacrificial layer by thermal conduction from the optically absorbent layer, up to a temperature that is greater than or equal to the dissociation temperature; and dissociating the sacrificial layer under the effect of the heating.

公开(公告)号：US20220301923A1

公开(公告)日：2022-09-22

申请号：US17805614

申请日：2022-06-06

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L21/762 ,  H01L41/313

Abstract: A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the support.

公开(公告)号：US20220059720A1

公开(公告)日：2022-02-24

申请号：US17416854

申请日：2019-11-29

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Mariia Rozhavskaia

IPC: H01L33/00 ,  H01L33/12 ,  H01L33/18

Abstract: A process for fabricating a growth substrate comprises preparing a donor substrate by forming a crystalline semiconductor surface layer on a seed layer of a carrier. This preparation comprises forming the surface layer as a plurality of alternations of an InGaN primary layer and of an AlGaN secondary layer, the indium concentration and the thickness of the primary layers and the aluminum concentration and the thickness of the secondary layers being selected so that a homogeneous AlInGaN layer that is equivalent, in terms of concentration of aluminum and indium-, to the surface layer has a natural lattice parameter different from the lattice parameter of the seed layer.

公开(公告)号：US20210210653A1

公开(公告)日：2021-07-08

申请号：US16069469

申请日：2018-03-14

Applicant: Soitec

Inventor： David Sotta ,  Olivier Ledoux ,  Olivier Bonnin ,  Jean-Marc Bethoux ,  Morgane Logiou ,  Raphaél Caulmilone

IPC: H01L33/00

Abstract: A growth substrate for forming optoelectronic devices comprises a growth medium and, arranged on the growth medium, a first group of crystalline semiconductor islands having a first lattice parameter and a second group of crystalline semiconductor islands having a second lattice parameter that is different from the first. Methods may be used to manufacture such growth substrates. The methods may be used to provide a monolithic micro-panel or light-emitting diodes or a micro-display screen.

公开(公告)号：US20160189965A1

公开(公告)日：2016-06-30

申请号：US14909969

申请日：2014-08-05

Applicant: SOITEC

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Oleg Kononchuk

IPC: H01L21/268 ,  H01L29/20 ,  H01L21/78

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/06875 ,  H01L33/0079

Abstract: A method for separating a structure from a substrate through electromagnetic irradiations (EI) belonging to a spectral range comprises the steps of a) providing the substrate, b) forming an absorbent separation layer on the substrate, c) forming the structure to be separated on the separation layer, d) exposing the separation layer to the electromagnetic irradiations (IE) via the substrate such that the separation layer breaks down under the effect of the heat stemming from the absorption, the method being notable in that it comprises a step b1) of forming a transparent thermal barrier layer on the separation layer, the exposure period and the thickness of the thermal barrier layer being adapted such that the temperature of the structure to be separated remains below a threshold during the exposure period, beyond which threshold, faults are likely to appear in the structure.

Abstract translation: 一种通过属于光谱范围的电磁照射（EI）将结构与基板分离的方法包括以下步骤：a）提供基底，b）在基底上形成吸收分离层，c）形成待分离的结构 分离层，d）经由衬底使分离层暴露于电磁照射（IE），使得分离层在吸收引起的热的作用下分解，该方法值得注意的是它包括步骤b1） 在分离层上形成透明热障层，曝光期和热障层的厚度适于使得待分离结构的温度在曝光期间保持在阈值以下，超过该阈值，故障为 可能出现在结构中。

公开(公告)号：US12052921B2

公开(公告)日：2024-07-30

申请号：US18049529

申请日：2022-10-25

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L21/265 ,  H10N30/073 ,  H10N30/853

CPC classification number: H10N30/073 ,  H01L21/26506 ,  H10N30/853

Abstract: A method for manufacturing a film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit the film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.

公开(公告)号：US12033854B2

公开(公告)日：2024-07-09

申请号：US17632021

申请日：2020-07-02

Applicant: Soitec

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Damien Radisson

IPC: H01L21/02

CPC classification number: H01L21/02529 ,  H01L21/02032 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/02502

Abstract: A method for producing a composite silicon carbide structure comprises:



providing an initial substrate of monocrystalline silicon carbide;
depositing an intermediate layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the initial substrate, the intermediate layer having a thickness greater than or equal to 1.5 microns;
implanting light ionic species through the intermediate layer to form a buried brittle plane in the initial substrate, delimiting the thin layer between the buried brittle plane and the intermediate layer, and
depositing an additional layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the intermediate layer, the intermediate layer and the additional layer forming a carrier substrate, and separating the buried brittle plane during the deposition of the additional layer.

公开(公告)号：US11462676B2

公开(公告)日：2022-10-04

申请号：US16496893

申请日：2018-03-27

Applicant: Soitec

Inventor： Jean-Marc Bethoux ,  Yann Sinquin ,  Damien Radisson

IPC: H01L41/253 ,  H01L41/08 ,  H01L41/319 ,  H03H3/08 ,  H03H9/02

Abstract: A method for adjusting the stress state of a piezoelectric film having a first stress state at room temperature includes a step of forming an assembly including a carrier having a thermal expansion coefficient, a compliant layer placed on the carrier, and the piezoelectric film placed on the compliant layer, the piezoelectric film having a thermal expansion coefficient different from that of the carrier. The method also includes a step of heat treating the assembly, in which the assembly is heated to a treatment temperature above the glass transition temperature of the compliant layer. The present disclosure also relates to a process for fabricating an acoustic wave device comprising the piezoelectric layer the stress state of which was adjusted as described herein.

公开(公告)号：US20220270875A1

公开(公告)日：2022-08-25

申请号：US17632021

申请日：2020-07-02

Applicant: Soitec

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Damien Radisson

IPC: H01L21/02

Abstract: A method for producing a composite silicon carbide structure comprises: providing an initial substrate of monocrystalline silicon carbide; depositing an intermediate layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the initial substrate, the intermediate layer having a thickness greater than or equal to 1.5 microns; implanting light ionic species through the intermediate layer to form a buried brittle plane in the initial substrate, delimiting the thin layer between the buried brittle plane and the intermediate layer, and depositing an additional layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the intermediate layer, the intermediate layer and the additional layer forming a carrier substrate, and separating the buried brittle plane during the deposition of the additional layer.

公开(公告)号：US20210367139A1

公开(公告)日：2021-11-25

申请号：US17396374

申请日：2021-08-06

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Jean-Marc Bethoux

IPC: H01L41/39 ,  H01L41/319 ,  H01L41/187 ,  C30B29/22 ,  C30B25/18 ,  H01L41/312 ,  H01L21/762 ,  C30B29/30 ,  H03H9/02 ,  H03H9/54 ,  H03H9/64

Abstract: A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O3 on piezoelectric material ABO3 of the seed layer, where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.