公开(公告)号：US10608610B2

公开(公告)日：2020-03-31

申请号：US16064419

申请日：2016-12-21

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H01L27/20 ,  H01L41/047 ,  H03H9/02 ,  H01L41/312 ,  H03H3/02 ,  H03H3/04 ,  H01L41/335

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US10347597B2

公开(公告)日：2019-07-09

申请号：US15500721

申请日：2015-07-03

Applicant: Soitec

Inventor： Oleg Kononchuk ,  William Van Den Daele ,  Eric Desbonnets

IPC: H03H3/02 ,  H03H3/08 ,  H01L23/66 ,  H01L41/04 ,  H01L21/306 ,  H01L21/762

Abstract: A structure for radiofrequency applications includes: a support substrate of high-resistivity silicon comprising a lower part and an upper part having undergone a p-type doping to a depth D; a mesoporous trapping layer of silicon formed in the doped upper part of the support substrate. The depth D is less than 1 micron and the trapping layer has a porosity rate of between 20% and 60%.

公开(公告)号：US20190157137A1

公开(公告)日：2019-05-23

申请号：US16308602

申请日：2017-06-06

Applicant: Soitec

Inventor： Eric Desbonnets ,  Ionut Radu ,  Oleg Kononchuk ,  Jean-Pierre Raskin

IPC: H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06

Abstract: A substrate for microelectronic radiofrequency devices includes a carrier substrate made of a first semiconductor material having a resistivity higher than 500 ohms·cm; a plurality of trenches in the carrier substrate, which trenches are filled with a second material, and defining on a first side of the carrier substrate a plurality of first zones made of a first material and at least one second zone made of a second material. The second material has a resistivity higher than 10 kohms·cm, and the first zones have a maximum dimension smaller than 10 microns and are insulated from one another by the second zone.

公开(公告)号：US20180130698A1

公开(公告)日：2018-05-10

申请号：US15803447

申请日：2017-11-03

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Isabelle Bertrand ,  Luciana Capello ,  Marcel Broekaart

IPC: H01L21/762 ,  H01L21/324 ,  H01L27/12 ,  H01L21/02 ,  C30B29/06

CPC classification number: H01L21/02337 ,  C30B29/06 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/02008 ,  H01L21/02123 ,  H01L21/02255 ,  H01L21/02296 ,  H01L21/02381 ,  H01L21/2686 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/76243 ,  H01L21/76251 ,  H01L21/76254 ,  H01L27/1203

Abstract: A method of fabrication of a semiconductor element includes a step of rapid heat treatment in which a substrate comprising a base having a resistivity greater than 1000 Ohm·cm is exposed to a peak temperature sufficient to deteriorate the resistivity of the base. The step of rapid heat treatment is followed by a curing heat treatment in which the substrate is exposed to a curing temperature between 800° C. and 1250° C. and then cooled at a cooldown rate less than 5° C./second when the curing temperature is between 1250° C. and 1150° C., less than 20° C./second when the curing temperature is between 1150° C. and 1100° C., and less than 50° C./second when the curing temperature is between 1100° C. and 800° C.

公开(公告)号：US09922867B2

公开(公告)日：2018-03-20

申请号：US15018465

申请日：2016-02-08

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/324 ,  H01L21/762 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/324

Abstract: A method for transferring a useful layer onto a carrier substrate comprises formation of an embrittlement plane by implantation of light species into a first substrate in such a manner as to define the bounds of a useful layer between the plane and a surface of the first substrate, mounting of the carrier substrate onto a surface of the first substrate so as to form an assembly to be fractured, and thermal fracture treatment of the first substrate along the embrittlement plane in such a manner as to transfer the useful layer onto a support. During the thermal fracture treatment, the degree of peripheral adhesion is reduced at an interface between the carrier substrate and the first substrate.

公开(公告)号：US20170207101A1

公开(公告)日：2017-07-20

申请号：US15403505

申请日：2017-01-11

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Carole David

IPC: H01L21/3105 ,  H01L21/762

CPC classification number: H01L21/31051 ,  H01L21/302 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/7624 ,  H01L21/76254

Abstract: A process for smoothing a silicon-on-insulator structure comprising the exposure of a surface of the structure to an inert or reducing gas flow and to a high temperature during a heat treatment includes performing a first heat treatment step at a first temperature and under a first gas flow defined by a first flow rate, and performing a second heat treatment step at a second temperature lower than the first temperature and under a second gas flow defined by a second flow rate lower than the first flow rate.

公开(公告)号：US09679777B2

公开(公告)日：2017-06-13

申请号：US14909969

申请日：2014-08-05

Applicant: Soitec

Inventor： Yann Sinquin ,  Jean-Marc Bethoux ,  Oleg Kononchuk

IPC: H01L21/00 ,  H01L21/268 ,  H01L31/0687 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L29/20 ,  H01L29/2003 ,  H01L31/06875 ,  H01L33/0079

Abstract: A method for separating a structure from a substrate through electromagnetic irradiations (EI) belonging to a spectral range comprises the steps of a) providing the substrate, b) forming an absorbent separation layer on the substrate, c) forming the structure to be separated on the separation layer, d) exposing the separation layer to the electromagnetic irradiations (EI) via the substrate such that the separation layer breaks down under the effect of the heat stemming from the absorption, the method being notable in that it comprises a step b1) of forming a transparent thermal barrier layer on the separation layer, the exposure period and the thickness of the thermal barrier layer being adapted such that the temperature of the structure to be separated remains below a threshold during the exposure period, beyond which threshold, faults are likely to appear in the structure.

公开(公告)号：US09589830B2

公开(公告)日：2017-03-07

申请号：US14686229

申请日：2015-04-14

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Damien Massy ,  Frederic Mazen ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/683

CPC classification number: H01L21/76254 ,  H01L21/6835 ,  H01L2221/68363 ,  H01L2221/68381

Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

Abstract translation: 用于将有用层转移到载体上的方法包括以下过程：通过将光物质注入到第一基底中形成脆性平面，以便在该平面和第一基底的表面之间形成有用层 ; 将支撑件施加到第一基板的表面上以形成具有两个暴露侧面的要断裂的组件; 热破碎处理组件要断裂; 以及沿着脆化平面在第一衬底中的断裂波的引发和自持续传播。 待破裂的组件的至少一个侧面在接触区域上紧密接触，其中吸收单元适于捕获和消散在断裂波的起始和/或传播期间发射的声振动。

公开(公告)号：US20240397825A1

公开(公告)日：2024-11-28

申请号：US18790903

申请日：2024-07-31

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Eric Butaud ,  Eric Desbonnets

IPC: H10N30/072 ,  H03H3/02 ,  H03H9/00 ,  H03H9/02

Abstract: The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

公开(公告)号：US12142517B2

公开(公告)日：2024-11-12

申请号：US17436532

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762

Abstract: A method for transferring a useful layer from a donor substrate to a carrier substrate comprises: a) providing the donor substrate, the donor substrate including a buried weakened plane; b) providing the carrier substrate; c) joining the donor substrate to the carrier substrate to form a bonded structure; and d) annealing the bonded structure in order to increase the level of weakening of the buried weakened plane. A predetermined stress is applied to the buried weakened plane during the annealing for a period of time, the predetermined stress being selected so as to initiate the splitting wave once a given level of weakening has been reached. At the end of the period of time, the given level of weakening having been reached, the predetermined stress causes initiation and self-sustained propagation of the splitting wave along the buried weakened plane, resulting in the useful layer being transferred to the carrier substrate.