公开(公告)号：US20210054280A1

公开(公告)日：2021-02-25

申请号：US17087637

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20190198315A1

公开(公告)日：2019-06-27

申请号：US16265709

申请日：2019-02-01

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoyoung KIM ,  Hyo-Sun LEE ,  Soojin KIM ,  Keonyoung KIM ,  JINHYE BAE ,  HOON HAN ,  Tae Soo KWON ,  Jung Hun LIM

IPC: H01L21/02 ,  C11D7/08 ,  C11D7/26 ,  C11D7/32 ,  H01L21/683 ,  H01L23/00 ,  C11D11/00

CPC classification number: H01L21/02068 ,  C11D7/08 ,  C11D7/261 ,  C11D7/264 ,  C11D7/266 ,  C11D7/3209 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/6835 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/1181 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3512 ,  H01L2924/37001 ,  H01L2224/11 ,  H01L2224/03

Abstract: Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.

公开(公告)号：US20180179442A1

公开(公告)日：2018-06-28

申请号：US15844712

申请日：2017-12-18

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/311 ,  H01L27/11556 ,  H01L29/66

CPC classification number: C09K13/06 ,  H01L21/0214 ,  H01L21/02458 ,  H01L21/31111 ,  H01L27/11556 ,  H01L29/66825

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20160017224A1

公开(公告)日：2016-01-21

申请号：US14797050

申请日：2015-07-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/311

CPC classification number: C09K13/06 ,  H01L21/31111 ,  H01L27/11556 ,  H01L29/66825

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

Abstract translation: 本发明涉及用于蚀刻的组合物，该组合物的制造方法以及使用该组合物制造半导体的方法。 组合物可以包括第一无机酸，通过第二无机酸和硅烷化合物之间的反应产生的硅烷无机酸盐和溶剂中的至少一种。 第二无机酸可以是选自硫酸，发烟硫酸，硝酸，磷酸及其组合中的至少一种。