SMDs integration on QFN by 3D stacked solution

    公开(公告)号:US10593612B2

    公开(公告)日:2020-03-17

    申请号:US15925420

    申请日:2018-03-19

    Abstract: One or more embodiments are directed to quad flat no-lead (QFN) semiconductor packages, devices, and methods in which one or more electrical components are positioned between a die pad of a QFN leadframe and a semiconductor die. In one embodiment, a device includes a die pad, a lead that is spaced apart from the die pad, and at least one electrical component that has a first contact on the die pad and a second contact on the lead. A semiconductor die is positioned on the at least one electrical component and is spaced apart from the die pad by the at least one electrical component. The device further includes at least one conductive wire, or wire bond, that electrically couples the at least one lead to the semiconductor die.

    Electronic device with die being sunk in substate

    公开(公告)号:US10211140B2

    公开(公告)日:2019-02-19

    申请号:US15616009

    申请日:2017-06-07

    Abstract: A method for forming an electronic device includes embedding an integrated circuit die in a package including substrate of thermally conductive material with front and back surfaces and a through-hole. The die is sunk in the through-hole. A first insulating material layer covers the die front surface and the package front surface with first windows for accessing die terminals. Package terminals and package track are arranged on the first insulating layer. A second insulating material layer covers the first insulating layer and the package tracks with second windows for accessing the package terminals.

Patent Agency Ranking