公开(公告)号：US20170268880A1

公开(公告)日：2017-09-21

申请号：US15610251

申请日：2017-05-31

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Luca Giuseppe Falorni ,  Carlo Valzasina ,  Roberto Carminati ,  Alessandro Tocchio

IPC: G01C19/5712 ,  G01C19/5733 ,  B81B3/00 ,  G01C19/5747

CPC classification number: G01C19/5712 ,  B81B3/0018 ,  B81B3/0086 ,  B81B2201/025 ,  B81B2203/0163 ,  G01C19/5733 ,  G01C19/5747

Abstract: MEMS device having a support region elastically carrying a suspended mass through first elastic elements. A tuned dynamic absorber is elastically coupled to the suspended mass and configured to dampen quadrature forces acting on the suspended mass at the natural oscillation frequency of the dynamic absorber. The tuned dynamic absorber is formed by a damping mass coupled to the suspended mass through second elastic elements. In an embodiment, the suspended mass and the damping mass are formed in a same structural layer, for example of semiconductor material, and the damping mass is surrounded by the suspended mass.

公开(公告)号：US20150323560A1

公开(公告)日：2015-11-12

申请号：US14672575

申请日：2015-03-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Castellano ,  Pierluigi Montinari ,  Salvatore Poli ,  Alessandro Tocchio ,  Giovanni Carlo Tripoli

IPC: G01P21/00 ,  G01P15/125

CPC classification number: G01P21/00 ,  G01C25/00 ,  G01P15/125

Abstract: A method for compensating non-linearities of a read signal generated by a variable-capacitance inertial sensor including a first fixed electrode and a second fixed electrode and a mobile electrode, which is spatially arranged between the first and second fixed electrodes and is capacitively coupled to the first and second fixed electrodes, said method comprising the steps of: acquiring the read signal; identifying a first linear component and at least one first nonlinear component of the read signal; a generating a compensated output signal by subtracting the first nonlinear component from the read signal.

Abstract translation: 一种用于补偿由包括第一固定电极和第二固定电极和移动电极的可变电容惯性传感器产生的读取信号的非线性的方法，所述第一固定电极和第二固定电极和移动电极被空间地布置在第一和第二固定电极之间并且电容耦合到 所述第一和第二固定电极，所述方法包括以下步骤：获取读取信号; 识别所述读取信号的第一线性分量和至少一个第一非线性分量; 通过从读取信号中减去第一非线性分量来产生补偿输出信号。

公开(公告)号：US12117464B2

公开(公告)日：2024-10-15

申请号：US18147629

申请日：2022-12-28

Applicant: STMicroelectronics S.r.l.

Inventor： Gabriele Gattere ,  Francesco Rizzini ,  Alessandro Tocchio

IPC: G01P15/125 ,  B81C1/00 ,  G01P15/08

CPC classification number: G01P15/125 ,  B81C1/00968 ,  G01P2015/0874

Abstract: An inertial structure is elastically coupled through a first elastic structure to a supporting structure so as to move along a sensing axis as a function of a quantity to be detected. The inertial structure includes first and second inertial masses which are elastically coupled together by a second elastic structure to enable movement of the second inertial mass along the sensing axis. The first elastic structure has a lower elastic constant than the second elastic structure so that, in presence of the quantity to be detected, the inertial structure moves in a sensing direction until the first inertial mass stops against a stop structure and the second elastic mass can move further in the sensing direction. Once the quantity to be detected ends, the second inertial mass moves in a direction opposite to the sensing direction and detaches the first inertial mass from the stop structure.

公开(公告)号：US11667519B2

公开(公告)日：2023-06-06

申请号：US17164546

申请日：2021-02-01

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandro Tocchio ,  Lorenzo Corso

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81C1/00246 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/092 ,  B81B2207/096 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/0136 ,  B81C2203/0771 ,  B81C2203/0792

Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.

公开(公告)号：US11277112B2

公开(公告)日：2022-03-15

申请号：US16991820

申请日：2020-08-12

Applicant: STMicroelectronics S.r.l.

Inventor： Gabriele Gattere ,  Lorenzo Corso ,  Alessandro Tocchio ,  Carlo Valzasina

IPC: H03H9/02 ,  H03H9/24 ,  H03H3/007

Abstract: A microelectromechanical device having a mobile structure including mobile arms formed from a composite material and having a fixed structure including fixed arms capacitively coupled to the mobile arms. The composite material includes core regions of insulating material and a silicon coating.

公开(公告)号：US20200373904A1

公开(公告)日：2020-11-26

申请号：US16991820

申请日：2020-08-12

Applicant: STMicroelectronics S.r.l.

Inventor： Gabriele Gattere ,  Lorenzo Corso ,  Alessandro Tocchio ,  Carlo Valzasina

IPC: H03H9/02 ,  H03H9/24 ,  H03H3/007

Abstract: A microelectromechanical device having a mobile structure including mobile arms formed from a composite material and having a fixed structure including fixed arms capacitively coupled to the mobile arms. The composite material includes core regions of insulating material and a silicon coating.

公开(公告)号：US10329141B2

公开(公告)日：2019-06-25

申请号：US15083034

申请日：2016-03-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandro Tocchio ,  Carlo Valzasina ,  Luca Guerinoni ,  Giorgio Allegato

IPC: H01L23/13 ,  B81B7/00 ,  B81C1/00 ,  H01L23/055 ,  H01L23/16

Abstract: An encapsulated device of semiconductor material wherein a chip of semiconductor material is fixed to a base element of a packaging body through at least one pillar element having elasticity and deformability greater than the chip, for example a Young's modulus lower than 300 MPa. In one example, four pillar elements are fixed in proximity of the corners of a fixing surface of the chip and operate as uncoupling structure, which prevents transfer of stresses and deformations of the base element to the chip.

公开(公告)号：US10274512B2

公开(公告)日：2019-04-30

申请号：US15182317

申请日：2016-06-14

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandro Tocchio ,  Francesco Rizzini ,  Luca Guerinoni

IPC: B81B3/00 ,  G01P1/00 ,  G01P15/125 ,  G01C19/5755 ,  G01P15/08

Abstract: A MEMS sensor device provided with a sensing structure, having: a substrate with a top surface extending in a horizontal plane; an inertial mass, suspended over the substrate; elastic coupling elements, elastically connected to the inertial mass so as to enable inertial movement thereof with respect to the substrate as a function of a quantity to be detected along a sensing axis belonging to the horizontal plane; and sensing electrodes, capacitively coupled to the inertial mass so as to form at least one sensing capacitor, a value of capacitance of which is indicative of the quantity to be detected. The sensing structure moreover has a suspension structure, to which the sensing electrodes are rigidly coupled, and to which the inertial mass is elastically coupled through the elastic coupling elements; the suspension structure is connected to an anchorage structure, fixed with respect to the substrate, by means of elastic suspension elements.

公开(公告)号：US10254355B2

公开(公告)日：2019-04-09

申请号：US15584672

申请日：2017-05-02

Applicant: STMicroelectronics S.r.l.

Inventor： Giacomo Langfelder ,  Alessandro Tocchio ,  Dario Paci

IPC: G01R33/028 ,  G01R33/02 ,  G01R33/00 ,  H01L41/08 ,  H01L41/113 ,  G01R33/038

Abstract: A magnetic field sensor includes a die and a current generator in the die. The current generator generates a driving current. A Lorentz force transducer is also formed in the die and coupled to the current generator to obtain measurements of a magnetic field based upon the Lorentz force. The magnetic field has a resonance frequency and the current generator drives the Lorentz force sensor with the driving current having a non-zero frequency different from the resonance frequency.

公开(公告)号：US10202275B2

公开(公告)日：2019-02-12

申请号：US15452424

申请日：2017-03-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandro Tocchio ,  Lorenzo Corso

IPC: B81B7/00 ,  B81C1/00

Abstract: A process for manufacturing an integrated semiconductor device, envisages: forming a MEMS structure; forming an ASIC electronic circuit; and electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.