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公开(公告)号：US10854837B2
公开(公告)日：2020-12-01
申请号：US16911525
申请日：2020-06-25
发明人： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US10541336B2
公开(公告)日：2020-01-21
申请号：US15724600
申请日：2017-10-04
发明人： Junhyung Lim , Jaybum Kim , Kyoungseok Son , Jihun Lim
IPC分类号： H01L29/786 , H01L21/02 , H01L21/322 , H01L51/52 , H01L29/423 , H01L27/32 , H01L29/04 , H01L27/12
摘要： A semiconductor device may include a base substrate, a first thin-film transistor (“TFT”) provided on the base substrate, a second TFT provided on the base substrate, and a plurality of insulating layers provided on the base substrate to define at least one dummy hole that is not overlapped with the first and second TFTs. The first TFT may include a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor material, and the second TFT may include a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor material. A shortest distance between the at least one dummy hole and the second semiconductor pattern may be equal to or shorter than 5 micrometers (μm), in a plan view.
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公开(公告)号：US10361260B2
公开(公告)日：2019-07-23
申请号：US15684452
申请日：2017-08-23
发明人： Jaybum Kim , Kyoungseok Son , Jihun Lim , Eoksu Kim , Junhyung Lim
IPC分类号： H01L27/32 , H01L27/12 , G09G3/3225 , G09G3/3266 , G09G3/3275 , H01L29/786
摘要： A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.
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公开(公告)号：US11575100B2
公开(公告)日：2023-02-07
申请号：US17082459
申请日：2020-10-28
发明人： Jaybum Kim , Eoksu Kim , Kyoungseok Son , Junhyung Lim , Jihun Lim
摘要： A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.
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公开(公告)号：US11430847B2
公开(公告)日：2022-08-30
申请号：US16820102
申请日：2020-03-16
发明人： Kyoungseok Son , Jaybum Kim , Eoksu Kim , Junhyung Lim , Jihun Lim
IPC分类号： H01L27/32 , H01L21/02 , H01L21/4757 , H01L29/66 , H01L29/786 , H01L27/12 , H01L49/02 , H01L29/24
摘要： A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.
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26.发明授权公开(公告)号：US11289588B2
公开(公告)日：2022-03-29
申请号：US16824339
申请日：2020-03-19
发明人： Jaybum Kim , Seryeong Kim , Junhyung Lim , Taesang Kim
IPC分类号： H01L29/786 , H01L29/66 , H01L27/32 , H01L27/146 , H01L29/04 , H01L27/12
摘要： A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern includes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.
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公开(公告)号：US20210336061A1
公开(公告)日：2021-10-28
申请号：US17370590
申请日：2021-07-08
发明人： Kyoungseok Son , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
IPC分类号： H01L29/786 , H01L27/12 , H01L27/32 , H01L23/485 , H01L51/00
摘要： A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.
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公开(公告)号：US11088284B2
公开(公告)日：2021-08-10
申请号：US15871468
申请日：2018-01-15
发明人： Kyoungseok Son , Eoksu Kim , Jaybum Kim , Junhyung Lim , Jihun Lim
IPC分类号： H01L29/786 , H01L27/12 , H01L27/32 , H01L23/485 , H01L51/00 , H01L27/06
摘要： A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.
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公开(公告)号：US20210242291A1
公开(公告)日：2021-08-05
申请号：US17081342
申请日：2020-10-27
发明人： Kyungjin Jeon , Soyoung Koo , Eoksu Kim , Junhyung Lim
IPC分类号： H01L27/32
摘要： A display apparatus includes a thin film transistor facing a substrate with a buffer layer therebetween and including a semiconductor layer, a channel region, a source region, a drain region, and a gate electrode; a conductive pattern between the substrate and the semiconductor layer and connected to the semiconductor layer, the conductive pattern facing the semiconductor layer with the buffer layer therebetween; a contact hole in the buffer layer and exposing the conductive pattern to outside the buffer layer; and a display element which is electrically connected to the thin film transistor. The source region or the drain region extends through the contact hole in the buffer layer, to contact the conductive pattern and connect the semiconductor layer to the conductive pattern.
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公开(公告)号：US20180233575A1
公开(公告)日：2018-08-16
申请号：US15730475
申请日：2017-10-11
发明人： Jaybum Kim , Seryeong Kim , Junhyung Lim , Taesang Kim
IPC分类号： H01L29/66 , H01L27/32 , H01L27/146 , H01L29/04 , H01L29/786
CPC分类号： H01L29/6675 , H01L27/1222 , H01L27/1225 , H01L27/1255 , H01L27/14692 , H01L27/3225 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L29/04 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.
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